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D. D. Koleske
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Journal Articles

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

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D. D. Koleske, J. J. Figiel, D. L. Alliman, B. P. Gunning, J. M. Kempisty, J. R. Creighton, A. Mishima, K. Ikenaga
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 232102 (2017)
https://doi.org/10.1063/1.4984900
Published: June 2017
View articletitled, Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density
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Journal Articles

The Mg impurity in nitride alloys

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M. E. Zvanut, W. R. Willoughby, U. R. Sunay, D. D. Koleske, A. A. Allerman, Ke Wang, Tsutomu Araki, Yasushi Nanishi
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 277–281 (2014)
https://doi.org/10.1063/1.4865652
Published: February 2014
View articletitled, The Mg impurity in nitride alloys
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Journal Articles

The source of holes in p-type InxGa1−xN films

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M. E. Zvanut, W. R. Willoughby, D. D. Koleske
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 086102 (2012)
https://doi.org/10.1063/1.4759242
Published: October 2012
View articletitled, The source of holes in p-type InxGa1−xN films
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Journal Articles

Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

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A. Armstrong, T. A. Henry, D. D. Koleske, M. H. Crawford, K. R. Westlake, S. R. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 162102 (2012)
https://doi.org/10.1063/1.4759003
Published: October 2012
View articletitled, Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes
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Journal Articles

Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells

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J. J. Wierer, Jr., D. D. Koleske, S. R. Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 111119 (2012)
https://doi.org/10.1063/1.3695170
Published: March 2012
View articletitled, Influence of barrier thickness on the performance of InGaN/GaN multiple quantum well solar cells
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Journal Articles

Pyrolysis of two-dimensional and three-dimensional interferometrically patterned resist structures

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D. B. Burckel, C. M. Washburn, D. D. Koleske, R. Polsky
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C6P14–C6P17 (2010)
https://doi.org/10.1116/1.3495756
Published: October 2010
View articletitled, Pyrolysis of two-dimensional and three-dimensional interferometrically patterned resist structures
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Journal Articles

Indium induced step transformation during InGaN growth on GaN

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D. D. Koleske, S. R. Lee, G. Thaler, M. H. Crawford, M. E. Coltrin, K. C. Cross
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 071901 (2010)
https://doi.org/10.1063/1.3479414
Published: August 2010
View articletitled, Indium induced step transformation during InGaN growth on GaN
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Journal Articles

The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices

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J. J. Wierer, Jr., A. J. Fischer, D. D. Koleske
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 051107 (2010)
https://doi.org/10.1063/1.3301262
Published: February 2010
View articletitled, The impact of piezoelectric polarization and nonradiative recombination on the performance of (0001) face GaN/InGaN photovoltaic devices
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Journal Articles

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

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Q. Dai, M. F. Schubert, M. H. Kim, J. K. Kim, E. F. Schubert, D. D. Koleske, M. H. Crawford, S. R. Lee, A. J. Fischer, G. Thaler, M. A. Banas
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 111109 (2009)
https://doi.org/10.1063/1.3100773
Published: March 2009
View articletitled, Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
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Journal Articles

Deep level investigation of p -type GaN using a simple photocurrent technique

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A. Armstrong, G. Thaler, D. D. Koleske
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 043712 (2009)
https://doi.org/10.1063/1.3081650
Published: February 2009
View articletitled, Deep level investigation of p -type GaN using a simple photocurrent technique
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Journal Articles

Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys

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A. N. Westmeyer, S. Mahajan, K. K. Bajaj, J. Y. Lin, H. X. Jiang, D. D. Koleske, R. T. Senger
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 013705 (2006)
https://doi.org/10.1063/1.2158492
Published: January 2006
View articletitled, Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys
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Journal Articles

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

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S. R. Lee, A. M. West, A. A. Allerman, K. E. Waldrip, D. M. Follstaedt, P. P. Provencio, D. D. Koleske, C. R. Abernathy
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 241904 (2005)
https://doi.org/10.1063/1.1947367
Published: June 2005
View articletitled, Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers
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Journal Articles

Bulk GaN and Al Ga N ∕ Ga N heterostructure drift velocity measurements and comparison to theoretical models

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J. M. Barker, D. K. Ferry, D. D. Koleske, R. J. Shul
Journal: Journal of Applied Physics
J. Appl. Phys. 97, 063705 (2005)
https://doi.org/10.1063/1.1854724
Published: March 2005
View articletitled, Bulk GaN and Al Ga N ∕ Ga N heterostructure drift velocity measurements and comparison to theoretical models
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Journal Articles

In situ measurements of the critical thickness for strain relaxation in Al Ga N ∕ Ga N heterostructures

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S. R. Lee, D. D. Koleske, K. C. Cross, J. A. Floro, K. E. Waldrip, A. T. Wise, S. Mahajan
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 6164–6166 (2004)
https://doi.org/10.1063/1.1840111
Published: December 2004
View articletitled, In situ measurements of the critical thickness for strain relaxation in Al Ga N ∕ Ga N heterostructures
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Journal Articles

Optical and electrical step-recovery study of minority-carrier transport in an In Ga N ∕ Ga N quantum-well light-emitting diode grown on sapphire

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R. J. Kaplar, S. R. Kurtz, D. D. Koleske
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 5436–5438 (2004)
https://doi.org/10.1063/1.1828229
Published: November 2004
View articletitled, Optical and electrical step-recovery study of minority-carrier transport in an In Ga N ∕ Ga N quantum-well light-emitting diode grown on sapphire
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Journal Articles

High field transport in GaN/AlGaN heterostructures

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J. M. Barker, D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. Allerman, R. J. Shul
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 2045–2050 (2004)
https://doi.org/10.1116/1.1775199
Published: August 2004
View articletitled, High field transport in GaN/AlGaN heterostructures
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Journal Articles

Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells

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R. J. Kaplar, S. R. Kurtz, D. D. Koleske, A. J. Fischer
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 4905–4913 (2004)
https://doi.org/10.1063/1.1690100
Published: May 2004
View articletitled, Electroreflectance studies of Stark shifts and polarization-induced electric fields in InGaN/GaN single quantum wells
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Journal Articles

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

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W. G. Breiland, S. R. Lee, D. D. Koleske
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 3453–3465 (2004)
https://doi.org/10.1063/1.1650882
Published: April 2004
View articletitled, Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress
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Journal Articles

Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance

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S. R. Kurtz, A. A. Allerman, D. D. Koleske, A. G. Baca, R. D. Briggs
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 1888–1894 (2004)
https://doi.org/10.1063/1.1639955
Published: February 2004
View articletitled, Electronic properties of the AlGaN/GaN heterostructure and two-dimensional electron gas observed by electroreflectance
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Journal Articles

Plan-view image contrast of dislocations in GaN

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D. M. Follstaedt, N. A. Missert, D. D. Koleske, C. C. Mitchell, K. C. Cross
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 4797–4799 (2003)
https://doi.org/10.1063/1.1632540
Published: December 2003
View articletitled, Plan-view image contrast of dislocations in GaN
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