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Journal Articles

Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Simon Fichtner, Mohamed Yassine, Chris G. Van de Walle, Oliver Ambacher

Appl. Phys. Lett. 125, 040501 (2024)

https://doi.org/10.1063/5.0217301

Published: July 2024

View article titled, Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Journal Articles

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

Nick Pant, Kyle Bushick, Andrew McAllister, Woncheol Lee, Chris G. Van de Walle, Emmanouil Kioupakis

Appl. Phys. Lett. 125, 021109 (2024)

https://doi.org/10.1063/5.0208840

Published: July 2024

View article titled, Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

Journal Articles

Rational design of efficient defect-based quantum emitters

Mark E. Turiansky, Kamyar Parto, Galan Moody, Chris G. Van de Walle

APL Photonics 9, 066117 (2024)

https://doi.org/10.1063/5.0203366

Published: June 2024

View article titled, Rational design of efficient defect-based quantum emitters

Journal Articles

Dielectric loss due to charged-defect acoustic phonon emission

Mark E. Turiansky, Chris G. Van de Walle

APL Quantum 1, 026114 (2024)

https://doi.org/10.1063/5.0205532

Published: June 2024

View article titled, Dielectric loss due to charged-defect acoustic phonon emission

Journal Articles

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Xie Zhang, Mark E. Turiansky, Lukas Razinkovas, Marek Maciaszek, Peter Broqvist, Qimin Yan, John L. Lyons, Cyrus E. Dreyer, Darshana Wickramaratne, Ádám Gali, Alfredo Pasquarello, Chris G. Van de Walle

J. Appl. Phys. 135, 150901 (2024)

https://doi.org/10.1063/5.0205525

Published: April 2024

View article titled, First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

Journal Articles

First-principles study of hydrogen- and oxygen-related complexes in ScN

Andrew J. E. Rowberg, Sai Mu, Chris G. Van de Walle

J. Appl. Phys. 135, 125701 (2024)

https://doi.org/10.1063/5.0198147

Published: March 2024

View article titled, First-principles study of hydrogen- and oxygen-related complexes in ScN

Journal Articles

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Alexander Senckowski, Shivam Sharma, Man Hoi Wong, Uttam Singisetti, Ymir Kalmann Frodason, Hartwin Peelaers, John L. Lyons, Joel B. Varley, Chris G. Van de Walle, Aaron Arehart, Steven A. Ringel

APL Mater. 11, 111110 (2023)

https://doi.org/10.1063/5.0160541

Published: November 2023

View article titled, Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Journal Articles

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Darshana Wickramaratne, Cyrus E. Dreyer, Bartomeu Monserrat, Jimmy-Xuan Shen, John L. Lyons, Audrius Alkauskas, Chris. G. Van de Walle

Appl. Phys. Lett. 123, 079901 (2023)

https://doi.org/10.1063/5.0169548

Published: August 2023

View article titled, Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Journal Articles

Fluorine and related complexes in α-Al₂O₃

Minseok Choi, Chris G. Van de Walle

J. Appl. Phys. 134, 064501 (2023)

https://doi.org/10.1063/5.0161929

Published: August 2023

View article titled, Fluorine and related complexes in α-Al2O3

Journal Articles

Diffusion of Sn donors in β-Ga₂O₃

Ymir K. Frodason, Patryk P. Krzyzaniak, Lasse Vines, Joel B. Varley, Chris G. Van de Walle, Klaus Magnus H. Johansen

APL Mater. 11, 041121 (2023)

https://doi.org/10.1063/5.0142671

Published: April 2023

View article titled, Diffusion of Sn donors in β-Ga2O3

Includes: Supplementary data

Book Chapter

Defects in β-Ga₂O₃: Theory and Microscopic Studies

Book: Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications

Series: AIPP Books, Principles

Published: February 2023

10.1063/9780735425033_005

EISBN: 978-0-7354-2503-3

ISBN: 978-0-7354-2500-2

Open the PDF for Defects in β-Ga2O3: Theory and Microscopic Studies in another window

Book Chapter

Dopants in β-Ga₂O₃: From Theory to Experiments

Book: Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications

Series: AIPP Books, Principles

Published: February 2023

10.1063/9780735425033_006

EISBN: 978-0-7354-2503-3

ISBN: 978-0-7354-2500-2

Open the PDF for Dopants in β-Ga2O3: From Theory to Experiments in another window

Journal Articles

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN₂ and MgSiN₂

Joshua Leveillee, Samuel Poncé, Nicholas L. Adamski, Chris G. Van de Walle, Feliciano Giustino

Appl. Phys. Lett. 120, 202106 (2022)

https://doi.org/10.1063/5.0092709

Published: May 2022

View article titled, Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN2 and MgSiN2

Includes: Supplementary data

Journal Articles

Epitaxial Sc_xAl₁₋_xN on GaN exhibits attractive high-K dielectric properties

Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto, Len van Deurzen, Wesley Turner, Patrick Fay, Sai Mu, Chris G. Van de Walle, Amit Lal, Huili (Grace) Xing, Debdeep Jena

Appl. Phys. Lett. 120, 152901 (2022)

https://doi.org/10.1063/5.0075636

Published: April 2022

View article titled, Epitaxial ScxAl1−xN on GaN exhibits attractive high-K dielectric properties

Includes: Supplementary data

Journal Articles

Defect tolerance in halide perovskites: A first-principles perspective

Xie Zhang, Mark E. Turiansky, Jimmy-Xuan Shen, Chris G. Van de Walle

J. Appl. Phys. 131, 090901 (2022)

https://doi.org/10.1063/5.0083686

Published: March 2022

View article titled, Defect tolerance in halide perovskites: A first-principles perspective

Journal Articles

Mg doping and diffusion in (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Akhil Mauze, Yuewei Zhang, Takeki Itoh, Thomas E. Mates, Hartwin Peelaers, Chris G. Van de Walle, James S. Speck

J. Appl. Phys. 130, 235301 (2021)

https://doi.org/10.1063/5.0072611

Published: December 2021

View article titled, Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy

Journal Articles

Incorporation of Si and Sn donors in β-Ga₂O₃ through surface reconstructions

Mengen Wang, Sai Mu, Chris G. Van de Walle

J. Appl. Phys. 130, 185703 (2021)

https://doi.org/10.1063/5.0068875

Published: November 2021

View article titled, Incorporation of Si and Sn donors in β-Ga2O3 through surface reconstructions

Journal Articles

Surprising stability of polar (001) surfaces of the Mott insulator GdTiO₃

Karthik Krishnaswamy, Anderson Janotti, Lars Bjaalie, Chris G. Van de Walle

J. Vac. Sci. Technol. A 39, 063220 (2021)

https://doi.org/10.1116/6.0001313

Published: November 2021

View article titled, Surprising stability of polar (001) surfaces of the Mott insulator GdTiO3

Journal Articles

Prospects for n-type conductivity in cubic boron nitride

Mark E. Turiansky, Darshana Wickramaratne, John L. Lyons, Chris G. Van de Walle

Appl. Phys. Lett. 119, 162105 (2021)

https://doi.org/10.1063/5.0069970

Published: October 2021

View article titled, Prospects for n-type conductivity in cubic boron nitride

Journal Articles

Piezoelectric effect and polarization switching in Al_1−xSc_xN

Haochen Wang, Nicholas Adamski, Sai Mu, Chris G. Van de Walle

J. Appl. Phys. 130, 104101 (2021)

https://doi.org/10.1063/5.0056485

Published: September 2021

View article titled, Piezoelectric effect and polarization switching in Al1−xScxN

NARROW

Topics

Clarification of the spontaneous polarization direction in crystals with wurtzite structure

Carrier confinement and alloy disorder exacerbate Auger–Meitner recombination in AlGaN ultraviolet light-emitting diodes

Rational design of efficient defect-based quantum emitters

Dielectric loss due to charged-defect acoustic phonon emission

First-principles calculations of defects and electron–phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

First-principles study of hydrogen- and oxygen-related complexes in ScN

Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Erratum: “Defect identification based on first-principles calculations for deep level transient spectroscopy” [Appl. Phys. Lett. 113 , 192106 (2018)]

Fluorine and related complexes in α-Al₂O₃

Diffusion of Sn donors in β-Ga₂O₃

Defects in β-Ga₂O₃: Theory and Microscopic Studies

Dopants in β-Ga₂O₃: From Theory to Experiments

Anisotropic-strain-enhanced hole mobility in GaN by lattice matching to ZnGeN₂ and MgSiN₂

Epitaxial Sc_xAl₁₋_xN on GaN exhibits attractive high-K dielectric properties

Defect tolerance in halide perovskites: A first-principles perspective

Mg doping and diffusion in (010) β-Ga₂O₃ films grown by plasma-assisted molecular beam epitaxy

Incorporation of Si and Sn donors in β-Ga₂O₃ through surface reconstructions

Surprising stability of polar (001) surfaces of the Mott insulator GdTiO₃

Prospects for n-type conductivity in cubic boron nitride

Piezoelectric effect and polarization switching in Al_1−xSc_xN

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