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Journal Articles

Novel inspection technology for detecting via open using parallel e-beam scanning and graphic design system

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Jaewon Hwang, Chihoon Lee, Kyu Lee, Younghun Kwon, Wonjo Woo, Seho Kim, Keunhyuk Yang, Youngwoon Yoon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 43, 034001 (2025)
https://doi.org/10.1116/6.0004425
Published: April 2025
View articletitled, Novel inspection technology for detecting via open using parallel e-beam scanning and graphic design system
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Journal Articles

Voltage-induced degradation in self-aligned polycrystalline silicon gate n -type field-effect transistors with Hf O 2 gate dielectrics

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Jaehoo Park, Moonju Cho, Hong Bae Park, Tae Joo Park, Suk Woo Lee, Sug Hun Hong, Doo Seok Jeong, Chihoon Lee, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 5965–5967 (2004)
https://doi.org/10.1063/1.1834992
Published: December 2004
View articletitled, Voltage-induced degradation in self-aligned polycrystalline silicon gate n -type field-effect transistors with Hf O 2 gate dielectrics
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Journal Articles

Nitrogen incorporation engineering and electrical properties of high- k gate dielectric ( HfO 2 and Al 2 O 3 ) films on Si (100) substrate

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Chihoon Lee, Jihoon Choi, Moonju Cho, Jahoo Park, Cheol Seong Hwang, Hyeong Joon Kim, Jaehack Jeong
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 1838–1843 (2004)
https://doi.org/10.1116/1.1775203
Published: July 2004
View articletitled, Nitrogen incorporation engineering and electrical properties of high- k gate dielectric ( HfO 2 and Al 2 O 3 ) films on Si (100) substrate
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Journal Articles

Phosphorus ion implantation and POCl 3 doping effects of n + -polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films

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Chihoon Lee, Jihoon Choi, Moonju Cho, Doo Seok Jeong, Cheol Seong Hwang, Hyeong Joon Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 2868–2870 (2004)
https://doi.org/10.1063/1.1697646
Published: April 2004
View articletitled, Phosphorus ion implantation and POCl 3 doping effects of n + -polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films
Open the PDF for Phosphorus ion implantation and POCl 3 doping effects of n + -polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films in another window
Journal Articles

Arsenic penetration behavior and electrical characteristics of As-doped n + polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films on Si (100) substrate

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Chihoon Lee, Jihoon Choi, Moonju Cho, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim, Jaehack Jeong, Wonshik Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 1403–1405 (2003)
https://doi.org/10.1063/1.1602168
Published: August 2003
View articletitled, Arsenic penetration behavior and electrical characteristics of As-doped n + polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films on Si (100) substrate
Open the PDF for Arsenic penetration behavior and electrical characteristics of As-doped n + polycrystalline-silicon/high-k gate dielectric ( HfO 2 and Al 2 O 3 ) films on Si (100) substrate in another window