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Cheol Seong Hwang
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Journal Articles

Comparative study on the stability of ferroelectric polarization of HfZrO2 and AlScN thin films over the depolarization effect

Kyung Do Kim, Seung Kyu Ryoo, Han Sol Park, Seungheon Choi, Tae Won Park, Min Kyu Yeom, Cheol Seong Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 024101 (2024)
https://doi.org/10.1063/5.0214909
Published: July 2024
View article titled, Comparative study on the stability of ferroelectric polarization of HfZrO<sub>2</sub> and AlScN thin films over the depolarization effect
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Journal Articles

Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Haengha Seo, Han Sol Park, Seong Tak Cho, Jonghoon Shin, Junil Lim, Tae Kyun Kim, Heewon Paik, Haewon Song, Cheol Seong Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 015301 (2024)
https://doi.org/10.1063/5.0217554
Published: July 2024
View article titled, Internal strain identification of seed-layered ZrO<sub>2</sub>, aluminum-, and yttrium-doped ZrO<sub>2</sub> thin films via grazing incidence x-ray diffraction
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Journal Articles

A ternary gate-connected threshold switching thin-film transistor

Kyung Seok Woo, Yonghee Lee, Joon-Kyu Han, Tae Won Park, Yoon Ho Jang, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 124, 153503 (2024)
https://doi.org/10.1063/5.0187155
Published: April 2024
View article titled, A ternary gate-connected threshold switching thin-film transistor
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Includes: Supplementary data
Journal Articles

Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf1-xZrxO2 by first principle calculations

Kun Hee Ye, In Won Yeu, Gyuseung Han, Taeyoung Jeong, Seungjae Yoon, Dohyun Kim, Cheol Seong Hwang, Jung-Hae Choi
Journal: Applied Physics Reviews
Appl. Phys. Rev. 10, 031419 (2023)
https://doi.org/10.1063/5.0160719
Published: September 2023
View article titled, Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf<sub>1-</sub><sub><em>x</em></sub>Zr<sub><em>x</em></sub>O<sub>2</sub> by first principle calculations
Open the PDF for Comprehensive interpretations of thermodynamic and kinetic effects on the phase fractions in Hf<sub>1-</sub><sub><em>x</em></sub>Zr<sub><em>x</em></sub>O<sub>2</sub> by first principle calculations in another window
Includes: Supplementary data
Journal Articles

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Journal: APL Materials
APL Mater. 11, 089201 (2023)
https://doi.org/10.1063/5.0148068
Published: August 2023
View article titled, Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
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Journal Articles

A first principles study of the in-plane strain effects on the dielectric constant of high-κ Be0.25Mg0.75O superlattice

Seungjae Yoon, Gyuseung Han, Kun Hee Ye, Taeyoung Jeong, Cheol Seong Hwang, Jung-Hae Choi
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 054102 (2023)
https://doi.org/10.1063/5.0159353
Published: August 2023
View article titled, A first principles study of the in-plane strain effects on the dielectric constant of high-κ Be<sub>0.25</sub>Mg<sub>0.75</sub>O superlattice
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Includes: Supplementary data
Journal Articles

Improved ferroelectricity in Hf0.5Zr0.5O2 by inserting an upper HfOxNy interfacial layer

Beom Yong Kim, Se Hyun Kim, Hyeon Woo Park, Yong Bin Lee, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Min Hyuk Park, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 122902 (2021)
https://doi.org/10.1063/5.0065571
Published: September 2021
View article titled, Improved ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> by inserting an upper HfO<sub>x</sub>N<sub>y</sub> interfacial layer
Open the PDF for Improved ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> by inserting an upper HfO<sub>x</sub>N<sub>y</sub> interfacial layer in another window
Includes: Supplementary data
Journal Articles

Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Beom Yong Kim, Baek Su Kim, Seung Dam Hyun, Ho Hyun Kim, Yong Bin Lee, Hyun Woo Park, Min Hyuk Park, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 022902 (2020)
https://doi.org/10.1063/5.0011663
Published: July 2020
View article titled, Study of ferroelectric characteristics of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes
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Includes: Supplementary data
Journal Articles

Investigation of the electronic structure of amorphous SnO film using x-ray absorption spectroscopy

Ahmed Yousef Mohamed, Seung Yeon Lee, Seung Jun Lee, Cheol Seong Hwang, Deok-Yong Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 052102 (2020)
https://doi.org/10.1063/1.5140518
Published: February 2020
View article titled, Investigation of the electronic structure of amorphous SnO film using x-ray absorption spectroscopy
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Journal Articles

A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices

Scilight
Min Hyuk Park, Han Joon Kim, Gwangyeop Lee, Jaehong Park, Young Hwan Lee, Yu Jin Kim, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Hyun Woo Park, Hye Jung Chang, Jung-Hae Choi, Cheol Seong Hwang
Journal: Applied Physics Reviews
Appl. Phys. Rev. 6, 041403 (2019)
https://doi.org/10.1063/1.5118737
Published: November 2019
View article titled, A comprehensive study on the mechanism of ferroelectric phase formation in hafnia-zirconia nanolaminates and superlattices
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Includes: Supplementary data
Journal Articles

Memristor crossbar array for binarized neural networks

Yong Kim, Won Hee Jeong, Son Bao Tran, Hyo Cheon Woo, Jihun Kim, Cheol Seong Hwang, Kyeong-Sik Min, Byung Joon Choi
Journal: AIP Advances
AIP Advances 9, 045131 (2019)
https://doi.org/10.1063/1.5092177
Published: April 2019
View article titled, Memristor crossbar array for binarized neural networks
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Includes: Supplementary data
Journal Articles

La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors

Maxim G. Kozodaev, Anna G. Chernikova, Roman R. Khakimov, Min Hyuk Park, Andrey M. Markeev, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 123902 (2018)
https://doi.org/10.1063/1.5045288
Published: September 2018
View article titled, La-doped Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin films for high-efficiency electrostatic supercapacitors
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Includes: Supplementary data
Journal Articles

Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta2O5/Pt resistive switching memory

Yichuan Wang, Yu Yan, Chen Wang, Yuting Chen, Junye Li, Jinshi Zhao, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 072902 (2018)
https://doi.org/10.1063/1.5040430
Published: August 2018
View article titled, Controlling the thin interfacial buffer layer for improving the reliability of the Ta/Ta<sub>2</sub>O<sub>5</sub>/Pt resistive switching memory
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Journal Articles

Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device

Gil Seop Kim, Tae Hyung Park, Hae Jin Kim, Tae Jung Ha, Woo Young Park, Soo Gil Kim, Cheol Seong Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 024102 (2018)
https://doi.org/10.1063/1.5033967
Published: July 2018
View article titled, Investigation of the retention performance of an ultra-thin HfO<sub>2</sub> resistance switching layer in an integrated memory device
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Includes: Supplementary data
Journal Articles

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Esko Ahvenniemi, Andrew R. Akbashev, Saima Ali, Mikhael Bechelany, Maria Berdova, Stefan Boyadjiev, David C. Cameron, Rong Chen, Mikhail Chubarov, Veronique Cremers, Anjana Devi, Viktor Drozd, Liliya Elnikova, Gloria Gottardi, Kestutis Grigoras, Dennis M. Hausmann, Cheol Seong Hwang, Shih-Hui Jen, Tanja Kallio, Jaana Kanervo, Ivan Khmelnitskiy, Do Han Kim, Lev Klibanov, Yury Koshtyal, A. Outi I. Krause, Jakob Kuhs, Irina Kärkkänen, Marja-Leena Kääriäinen, Tommi Kääriäinen, Luca Lamagna, Adam A. Łapicki, Markku Leskelä, Harri Lipsanen, Jussi Lyytinen, Anatoly Malkov, Anatoly Malygin, Abdelkader Mennad, Christian Militzer, Jyrki Molarius, Małgorzata Norek, Çağla Özgit-Akgün, Mikhail Panov, Henrik Pedersen, Fabien Piallat, Georgi Popov, Riikka L. Puurunen, Geert Rampelberg, Robin H. A. Ras, Erwan Rauwel, Fred Roozeboom, Timo Sajavaara, Hossein Salami, Hele Savin, Nathanaelle Schneider, Thomas E. Seidel, Jonas Sundqvist, Dmitry B. Suyatin, Tobias Törndahl, J. Ruud van Ommen, Claudia Wiemer, Oili M. E. Ylivaara, Oksana Yurkevich
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 010801 (2017)
https://doi.org/10.1116/1.4971389
Published: December 2016
View article titled, Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”
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Includes: Supplementary data
Journal Articles

Research Update: Diode performance of the Pt/Al2O3/two-dimensional electron gas/SrTiO3 structure and its time-dependent resistance evolution

Taehwan Moon, Hae Jun Jung, Yu Jin Kim, Min Hyuk Park, Han Joon Kim, Keum Do Kim, Young Hwan Lee, Seung Dam Hyun, Hyeon Woo Park, Sang Woon Lee, Cheol Seong Hwang
Journal: APL Materials
APL Mater. 5, 042301 (2017)
https://doi.org/10.1063/1.4967280
Published: November 2016
View article titled, Research Update: Diode performance of the Pt/Al<sub>2</sub>O<sub>3</sub>/two-dimensional electron gas/SrTiO<sub>3</sub> structure and its time-dependent resistance evolution
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Journal Articles

Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor

Sungin Suh, Seung Wook Ryu, Seongjae Cho, Jun-Rae Kim, Seongkyung Kim, Cheol Seong Hwang, Hyeong Joon Kim
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 01A136 (2016)
https://doi.org/10.1116/1.4937734
Published: December 2015
View article titled, Low-temperature SiON films deposited by plasma-enhanced atomic layer deposition method using activated silicon precursor
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Journal Articles

Interfacial charge-induced polarization switching in Al2O3/Pb(Zr,Ti)O3 bi-layer

Yu Jin Kim, Min Hyuk Park, Woojin Jeon, Han Joon Kim, Taehwan Moon, Young Hwan Lee, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 224105 (2015)
https://doi.org/10.1063/1.4937544
Published: December 2015
View article titled, Interfacial charge-induced polarization switching in Al<sub>2</sub>O<sub>3</sub>/Pb(Zr,Ti)O<sub>3</sub> bi-layer
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Journal Articles

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Young Hwan Lee, Taehwan Moon, Keum Do Kim, Seung Dam Hyun, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 192907 (2015)
https://doi.org/10.1063/1.4935588
Published: November 2015
View article titled, Study on the size effect in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films thinner than 8 nm before and after wake-up field cycling
Open the PDF for Study on the size effect in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> films thinner than 8 nm before and after wake-up field cycling in another window
Journal Articles

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Li Wei Zhou, Xing Long Shao, Xiang Yuan Li, Hao Jiang, Ran Chen, Kyung Jean Yoon, Hae Jin Kim, Kailiang Zhang, Jinshi Zhao, Cheol Seong Hwang
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 072901 (2015)
https://doi.org/10.1063/1.4928710
Published: August 2015
View article titled, Interface engineering for improving reliability of resistance switching in Cu/HfO<sub>2</sub>/TiO<sub>2</sub>/Pt structure
Open the PDF for Interface engineering for improving reliability of resistance switching in Cu/HfO<sub>2</sub>/TiO<sub>2</sub>/Pt structure in another window