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Journal Articles

Achievement of low turn-on voltage in Ga2O3 Schottky and heterojunction hybrid rectifiers using W/Au anode contact

Featured
Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton
Journal: AIP Advances
AIP Advances 14, 095201 (2024)
https://doi.org/10.1063/5.0227210
Published: September 2024
View article titled, Achievement of low turn-on voltage in Ga<sub>2</sub>O<sub>3</sub> Schottky and heterojunction hybrid rectifiers using W/Au anode contact
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Journal Articles

MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes

Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Jihyun Kim, Simon Barke, Peter Wass, Fan Ren, John W. Conklin, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052206 (2024)
https://doi.org/10.1116/6.0003818
Published: August 2024
View article titled, MeV proton and neutron damage effects on deep-ultraviolet light-emitting diodes
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Journal Articles

Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes

Editor’s Pick
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Sergei P. Stepanoff, Fan Ren, Aman Haque, Douglas Wolfe, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 052203 (2024)
https://doi.org/10.1116/6.0003819
Published: August 2024
View article titled, Effects of athermal carrier injection on Co-60 gamma-ray damage in SiC merged-PiN Schottky diodes
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Journal Articles

Cathodoluminescence studies of electron injection effects in p-type gallium oxide

Editor’s Pick
Leonid Chernyak, Alfons Schulte, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Stephen J. Pearton, Corinne Sartel, Vincent Sallet, Zeyu Chi, Yves Dumont, Ekaterine Chikoidze, Arie Ruzin
Journal: AIP Advances
AIP Advances 14, 085103 (2024)
https://doi.org/10.1063/5.0220201
Published: August 2024
View article titled, Cathodoluminescence studies of electron injection effects in p-type gallium oxide
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Journal Articles

Switching of kV-class Ga2O3 heterojunction vertical rectifiers

Editor’s Pick
Jian-Sian Li, Chao-Ching Chiang, Hsiao-Hsuan Wan, Meng-Hsun Yu, Yi-Ting Lin, Ying-Yu Yang, Fan Ren, Yu-Te Liao, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 053204 (2024)
https://doi.org/10.1116/6.0003839
Published: August 2024
View article titled, Switching of kV-class Ga<sub>2</sub>O<sub>3</sub> heterojunction vertical rectifiers
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Journal Articles

Dry and wet etching of single-crystal AlN

Editor’s Pick
Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Nahid Sultan Al-Mamun, Aman Haque, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 052601 (2024)
https://doi.org/10.1116/6.0003744
Published: July 2024
View article titled, Dry and wet etching of single-crystal AlN
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Journal Articles

Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures

Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 42, 022603 (2024)
https://doi.org/10.1116/6.0003400
Published: February 2024
View article titled, Selective and nonselective plasma etching of (Al<sub>0.18</sub>Ga<sub>0.82</sub>)<sub>2</sub>O<sub>3</sub>/ Ga<sub>2</sub>O<sub>3</sub> heterostructures
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Journal Articles

High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3

Featured
Hsiao-Hsuan Wan, Haochen Zhu, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Dan Neal, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 42, 023202 (2024)
https://doi.org/10.1116/6.0003370
Published: February 2024
View article titled, High sensitivity saliva-based biosensor in detection of breast cancer biomarkers: HER2 and CA15-3
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Journal Articles

E-mode AlGaN/GaN HEMTs using p-NiO gates

Chao-Ching Chiang, Hsiao-Hsuan Wan, Jian-Sian Li, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 062205 (2023)
https://doi.org/10.1116/6.0003119
Published: November 2023
View article titled, E-mode AlGaN/GaN HEMTs using p-NiO gates
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Journal Articles

β-Ga2O3 orientation dependence of band offsets with SiO2 and Al2O3

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, David C. Hays, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 063205 (2023)
https://doi.org/10.1116/6.0003039
Published: September 2023
View article titled, β-Ga<sub>2</sub>O<sub>3</sub> orientation dependence of band offsets with SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub>
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Journal Articles

Vertical NiO/β-Ga2O3 rectifiers grown by metalorganic chemical vapor deposition

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Fan Ren, Timothy Jinsoo Yoo, Honggyu Kim, Andrei Osinsky, Fikadu Alema, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 052707 (2023)
https://doi.org/10.1116/6.0002884
Published: August 2023
View article titled, Vertical NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers grown by metalorganic chemical vapor deposition
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Journal Articles

Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 043404 (2023)
https://doi.org/10.1116/6.0002722
Published: June 2023
View article titled, Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 <em>μ</em>m diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga<sub>2</sub>O<sub>3</sub> rectifiers
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Journal Articles

7.5 kV, 6.2 GW cm−2 NiO/β-Ga2O3 vertical rectifiers with on–off ratio greater than 1013

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Hsiao-Hsuan Wan, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 030401 (2023)
https://doi.org/10.1116/6.0002580
Published: April 2023
View article titled, 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup>
Open the PDF for 7.5 kV, 6.2 GW cm<sup>−2</sup> NiO/β-Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers with on–off ratio greater than 10<sup>13</sup> in another window
Journal Articles

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

Hsiao-Hsuan Wan, Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, Hannah N. Masten, James Spencer Lundh, Joseph A. Spencer, Fikadu Alema, Andrei Osinsky, Alan G. Jacobs, Karl Hobart, Marko J. Tadjer, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 032701 (2023)
https://doi.org/10.1116/6.0002393
Published: March 2023
View article titled, NiO/β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction lateral rectifiers with reverse breakdown voltage &gt;7 kV
Open the PDF for NiO/β-(Al<em><sub>x</sub></em>Ga<sub>1−<em>x</em></sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunction lateral rectifiers with reverse breakdown voltage >7 kV in another window
Journal Articles

Reversible total ionizing dose effects in NiO/Ga2O3 heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Sergei Stepanoff, Aman Haque, Douglas E. Wolfe, Fan Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 133, 015702 (2023)
https://doi.org/10.1063/5.0134823
Published: January 2023
View article titled, Reversible total ionizing dose effects in NiO/Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers
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Journal Articles

Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3

Jian-Sian Li, Xinyi Xia, Chao-Ching Chiang, David C. Hays, Brent P. Gila, Valentin Craciun, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 013405 (2023)
https://doi.org/10.1116/6.0002250
Published: December 2022
View article titled, Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform

Scilight
Chao-Ching Chiang, Chan-Wen Chiu, Fan Ren, Cheng-Tse Tsai, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 012204 (2023)
https://doi.org/10.1116/6.0002293
Published: December 2022
View article titled, Evaluation of dry stored disposable sensor strip on rapid SARS-CoV-2 detection platform
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Journal Articles

High sensitivity CIP2A detection for oral cancer using a rapid transistor-based biosensor module

Minghan Xian, Jenna L. Stephany, Chan-Wen Chiu, Chao-Ching Chiang, Fan Ren, Cheng-Tse Tsai, Siang-Sin Shan, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 41, 013201 (2023)
https://doi.org/10.1116/6.0002175
Published: December 2022
View article titled, High sensitivity CIP2A detection for oral cancer using a rapid transistor-based biosensor module
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Journal Articles

Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Xinyi Xia, Jian-Sian Li, Chao-Ching Chiang, Timothy Jinsoo Yoo, Eitan Hershkovitz, Fan Ren, Honggyu Kim, Jihyun Kim, Dae-Woo Jeon, Ji-Hyeon Park, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063408 (2022)
https://doi.org/10.1116/6.0002257
Published: November 2022
View article titled, Type II band alignment of NiO/α-Ga<sub>2</sub>O<sub>3</sub> for annealing temperatures up to 600 °C
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Journal Articles

Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga2O3 heterojunction rectifiers

Jian-Sian Li, Chao-Ching Chiang, Xinyi Xia, Fan Ren, S. J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 063407 (2022)
https://doi.org/10.1116/6.0002186
Published: November 2022
View article titled, Temperature dependence of on–off ratio and reverse recovery time in NiO/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction rectifiers
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