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Journal Articles

Effect of the oxygen vacancy on the ferroelectricity of 90° domain wall structure in PbTiO₃: A density functional theory study

Xiaoyuan Wang, Tao Xu, Fuzhen Xuan, ChangQing Chen, Takahiro Shimada, Takayuki Kitamura

J. Appl. Phys. 126, 174107 (2019)

https://doi.org/10.1063/1.5125306

Published: November 2019

View article titled, Effect of the oxygen vacancy on the ferroelectricity of 90° domain wall structure in PbTiO3: A density functional theory study

Journal Articles

Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation

Wanzhen He, Changqing Chen, Zhiping Xu

J. Appl. Phys. 126, 125902 (2019)

https://doi.org/10.1063/1.5121873

Published: September 2019

View article titled, Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation

Includes: Supplementary data

Journal Articles

Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO₂ passivation

Meng Peng, Feng Wu, Zhen Wang, Peng Wang, Fan Gong, Mingsheng Long, Changqing Chen, Jiangnan Dai, Weida Hu

Appl. Phys. Lett. 114, 111103 (2019)

https://doi.org/10.1063/1.5087785

Published: March 2019

View article titled, Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO2 passivation

Includes: Supplementary data

Journal Articles

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

Hanling Long, Jiangnan Dai, Yi Zhang, Shuai Wang, Bo Tan, Shuang Zhang, Linlin Xu, Maocheng Shan, Zhe Chuan Feng, Hao-chung Kuo, Changqing Chen

Appl. Phys. Lett. 114, 042101 (2019)

https://doi.org/10.1063/1.5074177

Published: January 2019

View article titled, High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

Journal Articles

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

Fan Jiang, Jingwen Chen, Han Bi, Luying Li, Wenkui Jing, Jun Zhang, Jiangnan Dai, Renchao Che, Changqing Chen, Yihua Gao

Appl. Phys. Lett. 112, 033505 (2018)

https://doi.org/10.1063/1.5010594

Published: January 2018

View article titled, The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

Includes: Supplementary data

Journal Articles

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Shichuang Sun, Kai Fu, Guohao Yu, Zhili Zhang, Liang Song, Xuguang Deng, Zhiqiang Qi, Shuiming Li, Qian Sun, Yong Cai, Jiangnan Dai, Changqing Chen, Baoshun Zhang

Appl. Phys. Lett. 108, 013507 (2016)

https://doi.org/10.1063/1.4939508

Published: January 2016

View article titled, AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

Journal Articles

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Wei Zhang, Jin Xu, Wei Ye, Yang Li, Zhiqiang Qi, Jiangnan Dai, Zhihao Wu, Changqing Chen, Jun Yin, Jing Li, Hao Jiang, Yanyan Fang

Appl. Phys. Lett. 106, 021112 (2015)

https://doi.org/10.1063/1.4905929

Published: January 2015

View article titled, High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Journal Articles

Defect reduction in Si-doped Al_0.45Ga_0.55N films by SiN_x interlayer method

Yang Li, Shengchang Chen, Man Kong, Senlin Li, Wu Tian, Shichuang Sun, Zhihao Wu, Yanyan Fang, Jiangnan Dai, Changqing Chen

J. Appl. Phys. 115, 043503 (2014)

https://doi.org/10.1063/1.4862804

Published: January 2014

View article titled, Defect reduction in Si-doped Al0.45Ga0.55N films by SiNx interlayer method

Journal Articles

Fabrication of GaN nanodots via GaN thermal decomposition in H₂ atmosphere

Xiong Hui, Jin Zhang, Senlin Li, Hu Wang, Yanyan Fang, Jiangnan Dai, Changqing Chen

J. Vac. Sci. Technol. B 31, 050607 (2013)

https://doi.org/10.1116/1.4819128

Published: September 2013

View article titled, Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphere

Journal Articles

Effect of the Al_0.3Ga_0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metal-organic chemical vapor deposition

Senlin Li, Qingqing Chen, Jin Zhang, Huiquan Chen, Wei Xu, Hui Xiong, Zhihao Wu, Yanyan Fang, Changqing Chen, Yu Tian

J. Vac. Sci. Technol. B 31, 041202 (2013)

https://doi.org/10.1116/1.4809514

Published: June 2013

View article titled, Effect of the Al0.3Ga0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metal-organic chemical vapor deposition

Journal Articles

Elastic properties of tetragonal BiFeO₃ from first-principles calculations

Huafeng Dong, Changqing Chen, Shanying Wang, Wenhui Duan, Jingbo Li

Appl. Phys. Lett. 102, 182905 (2013)

https://doi.org/10.1063/1.4804641

Published: May 2013

View article titled, Elastic properties of tetragonal BiFeO3 from first-principles calculations

Includes: Supplementary data

Journal Articles

Improved Ohmic contacts to plasma etched n-Al_0.5Ga_0.5N by annealing under nitrogen ambient before metal deposition

Wei Zhang, Jianbao Zhang, Zhihao Wu, Shengchang Chen, Yang Li, Yu Tian, Jiangnan Dai, Changqing Chen, Yanyan Fang

J. Appl. Phys. 113, 094503 (2013)

https://doi.org/10.1063/1.4794099

Published: March 2013

View article titled, Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition

Journal Articles

Influence of in-plane biaxial stress on the structural properties, ferroelectric response, and piezoelectricity of tetragonal PbTiO 3

Yifeng Duan, Lixia Qin, Gang Tang, Changqing Chen

J. Appl. Phys. 105, 033706 (2009)

https://doi.org/10.1063/1.3077231

Published: February 2009

View article titled, Influence of in-plane biaxial stress on the structural properties, ferroelectric response, and piezoelectricity of tetragonal PbTiO 3

Journal Articles

Abnormal ferroelectric response and enhancement of piezoelectricity of PbTiO 3 under uniaxial compression

Yifeng Duan, Jingbo Li, Shu-Shen Li, Jian-Bai Xia, Changqing Chen

J. Appl. Phys. 103, 083713 (2008)

https://doi.org/10.1063/1.2912721

Published: April 2008

View article titled, Abnormal ferroelectric response and enhancement of piezoelectricity of PbTiO 3 under uniaxial compression

Journal Articles

Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Ashay Chitnis, Changqing Chen, Vinod Adivarahan, Maxim Shatalov, Edmundas Kuokstis, Vasavi Mandavilli, Jinwei Yang, M. Asif Khan

Appl. Phys. Lett. 84, 3663–3665 (2004)

https://doi.org/10.1063/1.1738938

Published: May 2004

View article titled, Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Journal Articles

Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

Hongmei Wang, Changqing Chen, Zheng Gong, Jianping Zhang, Mikhail Gaevski, Ming Su, Jinwei Yang, M. Asif Khan

Appl. Phys. Lett. 84, 499–501 (2004)

https://doi.org/10.1063/1.1644054

Published: January 2004

View article titled, Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

NARROW

Topics

Effect of the oxygen vacancy on the ferroelectricity of 90° domain wall structure in PbTiO₃: A density functional theory study

Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation

Enhancement-mode CdS nanobelts field effect transistors and phototransistors with HfO₂ passivation

High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

High-performance AlGaN metal–semiconductor–metal solar-blind ultraviolet photodetectors by localized surface plasmon enhancement

Defect reduction in Si-doped Al_0.45Ga_0.55N films by SiN_x interlayer method

Fabrication of GaN nanodots via GaN thermal decomposition in H₂ atmosphere

Effect of the Al_0.3Ga_0.7As interlayer thickness upon the quality of GaAs on a Ge substrate grown by metal-organic chemical vapor deposition

Elastic properties of tetragonal BiFeO₃ from first-principles calculations

Improved Ohmic contacts to plasma etched n-Al_0.5Ga_0.5N by annealing under nitrogen ambient before metal deposition

Influence of in-plane biaxial stress on the structural properties, ferroelectric response, and piezoelectricity of tetragonal PbTiO 3

Abnormal ferroelectric response and enhancement of piezoelectricity of PbTiO 3 under uniaxial compression

Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire

Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire

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