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Journal Articles

Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips

Featured
Minghan Xian, Chan-Wen Chiu, Patrick H. Carey, IV, Chaker Fares, Liya Chen, Rena Wu, Fan Ren, Cheng-Tse Tsai, Siang-Sin Shan, Yu-Te Liao, Josephine F. Esquivel-Upshaw, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 023202 (2022)
https://doi.org/10.1116/6.0001576
Published: February 2022
View article titled, Digital biosensor for human cerebrospinal fluid detection with single-use sensing strips
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Journal Articles

Nitrogen ion-implanted resistive regions for edge termination of vertical Ga2O3 rectifiers

Xinyi Xia, Minghan Xian, Chaker Fares, Ribhu Sharma, Mark E. Law, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 063405 (2021)
https://doi.org/10.1116/6.0001347
Published: September 2021
View article titled, Nitrogen ion-implanted resistive regions for edge termination of vertical Ga<sub>2</sub>O<sub>3</sub> rectifiers
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Journal Articles

OH-Si complex in hydrogenated n-type β -Ga2O3:Si

Andrew Venzie, Amanda Portoff, Chaker Fares, Michael Stavola, W. Beall Fowler, Fan Ren, Stephen J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 119, 062109 (2021)
https://doi.org/10.1063/5.0059769
Published: August 2021
View article titled, OH-Si complex in hydrogenated n-type <em>β</em> -Ga<sub>2</sub>O<sub>3</sub>:Si
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Journal Articles

Temperature dependent performance of ITO Schottky contacts on β-Ga2O3

Xinyi Xia, Minghan Xian, Chaker Fares, Fan Ren, Marko Tadjer, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 053405 (2021)
https://doi.org/10.1116/6.0001211
Published: August 2021
View article titled, Temperature dependent performance of ITO Schottky contacts on β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform

Minghan Xian, Hao Luo, Xinyi Xia, Chaker Fares, Patrick H. Carey, IV, Chan-Wen Chiu, Fan Ren, Siang-Sin Shan, Yu-Te Liao, Shu-Min Hsu, Josephine F. Esquivel-Upshaw, Chin-Wei Chang, Jenshan Lin, Steven C. Ghivizzani, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 39, 033202 (2021)
https://doi.org/10.1116/6.0001060
Published: May 2021
View article titled, Fast SARS-CoV-2 virus detection using disposable cartridge strips and a semiconductor-based biosensor platform
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Journal Articles

Effect of probe geometry during measurement of >100 A Ga2O3 vertical rectifiers

Ribhu Sharma, Minghan Xian, Chaker Fares, Mark E. Law, Marko Tadjer, Karl D. Hobart, Fan Ren, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 013406 (2021)
https://doi.org/10.1116/6.0000815
Published: December 2020
View article titled, Effect of probe geometry during measurement of &gt;100 A Ga<sub>2</sub>O<sub>3</sub> vertical rectifiers
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Journal Articles

Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

Chaker Fares, Fan Ren, Marko J. Tadjer, Jeffrey Woodward, Michael A. Mastro, Boris N. Feigelson, Charles R. Eddy, Jr., S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 182103 (2020)
https://doi.org/10.1063/5.0025835
Published: November 2020
View article titled, Band offset determination for amorphous Al<sub>2</sub>O<sub>3</sub> deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
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Journal Articles

Changes in band alignment during annealing at 600 °C of ALD Al2O3 on (InxGa1 − x)2O3 for x = 0.25–0.74

Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 105701 (2020)
https://doi.org/10.1063/5.0002875
Published: March 2020
View article titled, Changes in band alignment during annealing at 600 °C of ALD Al<sub>2</sub>O<sub>3</sub> on (In<sub>x</sub>Ga<sub>1 − x</sub>)<sub>2</sub>O<sub>3</sub> for x = 0.25–0.74
Open the PDF for Changes in band alignment during annealing at 600 °C of ALD Al<sub>2</sub>O<sub>3</sub> on (In<sub>x</sub>Ga<sub>1 − x</sub>)<sub>2</sub>O<sub>3</sub> for x = 0.25–0.74 in another window
Journal Articles

Forward bias degradation and thermal simulations of vertical geometry β-Ga2O3 Schottky rectifiers

Minghan Xian, Randy Elhassani, Chaker Fares, Fan Ren, Marko Tadjer, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061205 (2019)
https://doi.org/10.1116/1.5127511
Published: October 2019
View article titled, Forward bias degradation and thermal simulations of vertical geometry β-Ga<sub>2</sub>O<sub>3</sub> Schottky rectifiers
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Journal Articles

Effect of thermal annealing for W/β-Ga2O3 Schottky diodes up to 600 °C

Minghan Xian, Chaker Fares, Fan Ren, Brent P. Gila, Yen-Ting Chen, Yu-Te Liao, Marko Tadjer, Stephen J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 061201 (2019)
https://doi.org/10.1116/1.5125006
Published: September 2019
View article titled, Effect of thermal annealing for W/β-Ga<sub>2</sub>O<sub>3</sub> Schottky diodes up to 600 °C
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Journal Articles

The role of annealing ambient on diffusion of implanted Si in β -Ga2O3

Ribhu Sharma, Mark E. Law, Chaker Fares, Marko Tadjer, Fan Ren, A. Kuramata, S. J. Pearton
Journal: AIP Advances
AIP Advances 9, 085111 (2019)
https://doi.org/10.1063/1.5115149
Published: August 2019
View article titled, The role of annealing ambient on diffusion of implanted Si in β -Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Chaker Fares, Max Kneiß, Holger von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, Eric Lambers, S. J. Pearton
Journal: APL Materials
APL Mater. 7, 071115 (2019)
https://doi.org/10.1063/1.5110498
Published: July 2019
View article titled, Valence band offsets for ALD SiO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> on (In<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> for x = 0.25–0.74
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Journal Articles

Vertical geometry 33.2 A, 4.8 MW cm2 Ga2O3 field-plated Schottky rectifier arrays

Jiancheng Yang, Minghan Xian, Patrick Carey, Chaker Fares, Jessica Partain, Fan Ren, Marko Tadjer, Elaf Anber, Dan Foley, Andrew Lang, James Hart, James Nathaniel, Mitra L. Taheri, S. J. Pearton, Akito Kuramata
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 232106 (2019)
https://doi.org/10.1063/1.5100256
Published: June 2019
View article titled, Vertical geometry 33.2 A, 4.8 MW cm<sup>2</sup> Ga<sub>2</sub>O<sub>3</sub> field-plated Schottky rectifier arrays
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Journal Articles

Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions

A. Y. Polyakov, N. B. Smirnov, I. V. Schemerov, A. V. Chernykh, E. B. Yakimov, A. I. Kochkova, Jiancheng Yang, Chaker Fares, F. Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 095702 (2019)
https://doi.org/10.1063/1.5080941
Published: March 2019
View article titled, Deep traps and persistent photocapacitance in β-(Al<sub>0.14</sub> Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub> heterojunctions
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Journal Articles

Band alignment of atomic layer deposited SiO2 on (010) (Al0.14Ga0.86)2O3

Editor’s Pick
Chaker Fares, F. Ren, Eric Lambers, David C. Hays, B. P. Gila, S. J. Pearton
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 061207 (2018)
https://doi.org/10.1116/1.5052620
Published: October 2018
View article titled, Band alignment of atomic layer deposited SiO<sub>2</sub> on (010) (Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub>
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Journal Articles

Valence band offsets for CuI on (-201) bulk Ga2O3 and epitaxial (010) (Al0.14Ga0.86)2O3

Chaker Fares, F. Ren, David C. Hays, B. P. Gila, Marko Tadjer, Karl D. Hobart, S. J. Pearton
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 182101 (2018)
https://doi.org/10.1063/1.5055941
Published: October 2018
View article titled, Valence band offsets for CuI on (-201) bulk Ga<sub>2</sub>O<sub>3</sub> and epitaxial (010) (Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub>
Open the PDF for Valence band offsets for CuI on (-201) bulk Ga<sub>2</sub>O<sub>3</sub> and epitaxial (010) (Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub> in another window
Journal Articles

Effect of proton irradiation energy on SiNx/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors

Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 052202 (2018)
https://doi.org/10.1116/1.5049596
Published: September 2018
View article titled, Effect of proton irradiation energy on SiN<sub>x</sub>/AlGaN/GaN metal-insulator semiconductor high electron mobility transistors
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Journal Articles

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3

A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, S. J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Jihyun Kim, P. B. Lagov, V. S. Stolbunov, A. Kochkova
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 092102 (2018)
https://doi.org/10.1063/1.5049130
Published: August 2018
View article titled, Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Effect of alpha-particle irradiation dose on SiNx/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors

Chaker Fares, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Chien-Fong Lo, J. Wayne Johnson
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 041203 (2018)
https://doi.org/10.1116/1.5042261
Published: July 2018
View article titled, Effect of alpha-particle irradiation dose on SiN<sub>x</sub>/AlGaN/GaN metal–insulator semiconductor high electron mobility transistors
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Journal Articles

Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga2O3 Schottky rectifiers

Editor’s Pick
Jiancheng Yang, Chaker Fares, Yu Guan, F. Ren, S. J. Pearton, Jinho Bae, Jihyun Kim, Akito Kuramata
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 031205 (2018)
https://doi.org/10.1116/1.5027613
Published: May 2018
View article titled, Eighteen mega-electron-volt alpha-particle damage in homoepitaxial β-Ga<sub>2</sub>O<sub>3</sub> Schottky rectifiers
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