Page 1 | Search Results | AIP Publishing

1-20 of 122

Sort by

Sort Order Select

Journal Articles

Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity

Daeyoung Choi, Michael J. Wishon, C. Y. Chang, D. S. Citrin, A. Locquet

Chaos 28, 011102 (2018)

https://doi.org/10.1063/1.5013332

Published: January 2018

View article titled, Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity

Journal Articles

Modulation of sub-threshold properties of InGaAs MOSFETs by La₂O₃ gate dielectrics

C.-Y. Chang, K. Endo, K. Kato, M. Takenaka, S. Takagi

AIP Advances 7, 095215 (2017)

https://doi.org/10.1063/1.4999958

Published: September 2017

View article titled, Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics

Journal Articles

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

C. Y. Chang, Daeyoung Choi, A. Locquet, Michael J. Wishon, K. Merghem, Abderrahim Ramdane, François Lelarge, A. Martinez, D. S. Citrin

Appl. Phys. Lett. 108, 191109 (2016)

https://doi.org/10.1063/1.4948761

Published: May 2016

View article titled, A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

Journal Articles

Impact of La₂O₃ interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al₂O₃/La₂O₃/InGaAs gate stacks deposited by atomic-layer-deposition

C.-Y. Chang, O. Ichikawa, T. Osada, M. Hata, H. Yamada, M. Takenaka, S. Takagi

J. Appl. Phys. 118, 085309 (2015)

https://doi.org/10.1063/1.4929650

Published: August 2015

View article titled, Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

Journal Articles

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

J.-R. Chang, S.-P. Chang, Y.-J. Li, Y.-J. Cheng, K.-P. Sou, J.-K. Huang, H.-C. Kuo, C.-Y. Chang

Appl. Phys. Lett. 100, 261103 (2012)

https://doi.org/10.1063/1.4731629

Published: June 2012

View article titled, Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

Journal Articles

Electrically driven nanopyramid green light emitting diode

S.-P. Chang, Y.-C. Chen, J.-K. Huang, Y.-J. Cheng, J.-R. Chang, K.-P. Sou, Y.-T. Kang, H.-C. Yang, T.-C. Hsu, H.-C. Kuo, C.-Y. Chang

Appl. Phys. Lett. 100, 061106 (2012)

https://doi.org/10.1063/1.3681363

Published: February 2012

View article titled, Electrically driven nanopyramid green light emitting diode

Journal Articles

Resonant x-ray reflectivity study of perovskite oxide superlattices

N. Kemik, M. Gu, F. Yang, C.-Y. Chang, Y. Song, M. Bibee, A. Mehta, M. D. Biegalski, H. M. Christen, N. D. Browning, Y. Takamura

Appl. Phys. Lett. 99, 201908 (2011)

https://doi.org/10.1063/1.3660719

Published: November 2011

View article titled, Resonant x-ray reflectivity study of perovskite oxide superlattices

Journal Articles

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

C. H. Wang, S. P. Chang, P. H. Ku, J. C. Li, Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo, T. C. Lu, S. C. Wang, C. Y. Chang

Appl. Phys. Lett. 99, 171106 (2011)

https://doi.org/10.1063/1.3655903

Published: October 2011

View article titled, Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

Journal Articles

Optical properties of self assembled GaN polarity inversion domain boundary

M.-C. Liu, Y.-J. Cheng, J.-R. Chang, S.-C. Hsu, C.-Y. Chang

Appl. Phys. Lett. 99, 021103 (2011)

https://doi.org/10.1063/1.3610449

Published: July 2011

View article titled, Optical properties of self assembled GaN polarity inversion domain boundary

Journal Articles

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

C. F. Lo, F. Ren, C. Y. Chang, S. J. Pearton, S.-H. Chen, C.-M. Chang, S.-Y. Wang, J.-I. Chyi, I. I. Kravchenko

J. Vac. Sci. Technol. B 29, 031205 (2011)

https://doi.org/10.1116/1.3589808

Published: May 2011

View article titled, Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Journal Articles

Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

C.-F. Lo, L. Liu, C. Y. Chang, F. Ren, V. Craciun, S. J. Pearton, Y. W. Heo, O. Laboutin, J. W. Johnson

J. Vac. Sci. Technol. B 29, 021002 (2011)

https://doi.org/10.1116/1.3545811

Published: January 2011

View article titled, Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

Journal Articles

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

C. F. Lo, T. S. Kang, L. Liu, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, O. Laboutin, J. W. Johnson, F. Ren

Appl. Phys. Lett. 97, 262116 (2010)

https://doi.org/10.1063/1.3533381

Published: December 2010

View article titled, Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

Journal Articles

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Lin Zhou, C. Y. Chang, S. J. Pearton, F. Ren, Amir Dabiran, David. J. Smith

J. Appl. Phys. 108, 084513 (2010)

https://doi.org/10.1063/1.3501106

Published: October 2010

View article titled, TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Journal Articles

Proton irradiation effects on AlN/GaN high electron mobility transistors

C. F. Lo, C. Y. Chang, B. H. Chu, H.-Y. Kim, J. Kim, David A. Cullen, Lin Zhou, David. J. Smith, S. J. Pearton, Amir Dabiran, B. Cui, P. P. Chow, S. Jang, F. Ren

J. Vac. Sci. Technol. B 28, L47–L51 (2010)

https://doi.org/10.1116/1.3482335

Published: August 2010

View article titled, Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal Articles

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

C. F. Lo, C. Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, F. Ren

Appl. Phys. Lett. 96, 232106 (2010)

https://doi.org/10.1063/1.3454279

Published: June 2010

View article titled, Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

Journal Articles

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Yu-Lin Wang, C. Y. Chang, Wantae Lim, S. J. Pearton, D. P. Norton, B. H. Chu, C. F. Lo, F. Ren, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum

J. Vac. Sci. Technol. B 28, 376–379 (2010)

https://doi.org/10.1116/1.3368467

Published: March 2010

View article titled, Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Journal Articles

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

K. H. Chen, C. Y. Chang, L. C. Leu, C. F. Lo, B. H. Chu, S. J. Pearton, F. Ren

J. Vac. Sci. Technol. B 28, 365–370 (2010)

https://doi.org/10.1116/1.3359603

Published: March 2010

View article titled, Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Journal Articles

Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

C. F. Lo, C. Y. Chang, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, F. Ren

J. Vac. Sci. Technol. B 28, 52–55 (2010)

https://doi.org/10.1116/1.3271333

Published: January 2010

View article titled, Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

Journal Articles

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Byung Hwan Chu, C. Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, Fan Ren

Appl. Phys. Lett. 96, 013701 (2010)

https://doi.org/10.1063/1.3279159

Published: January 2010

View article titled, Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Journal Articles

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

M.-H. Lo, P.-M. Tu, C.-H. Wang, Y.-J. Cheng, C.-W. Hung, S.-C. Hsu, H.-C. Kuo, H.-W. Zan, S.-C. Wang, C.-Y. Chang, C.-M. Liu

Appl. Phys. Lett. 95, 211103 (2009)

https://doi.org/10.1063/1.3266859

Published: November 2009

View article titled, Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

NARROW

Topics

Multistate intermittency on the route to chaos of a semiconductor laser subjected to optical feedback from a long external cavity

Modulation of sub-threshold properties of InGaAs MOSFETs by La₂O₃ gate dielectrics

A multi-GHz chaotic optoelectronic oscillator based on laser terminal voltage

Impact of La₂O₃ interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al₂O₃/La₂O₃/InGaAs gate stacks deposited by atomic-layer-deposition

Fabrication and luminescent properties of core-shell InGaN/GaN multiple quantum wells on GaN nanopillars

Electrically driven nanopyramid green light emitting diode

Resonant x-ray reflectivity study of perovskite oxide superlattices

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

Optical properties of self assembled GaN polarity inversion domain boundary

Fabrication of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors

Annealing temperature dependence of Ohmic contact resistance and morphology on InAlN/GaN high electron mobility transistor structures

Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Proton irradiation effects on AlN/GaN high electron mobility transistors

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors

Degradation of 150 nm mushroom gate InAlAs/InGaAs metamorphic high electron mobility transistors during dc stressing and thermal storage

Passivation of Al N ∕ Ga N high electron mobility transistor using ozone treatment

Detection of an endocrine disrupter biomarker, vitellogenin, in largemouth bass serum using AlGaN/GaN high electron mobility transistors

Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only