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C. T. Foxon
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Journal Articles

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

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N. Segercrantz, K. M. Yu, M. Ting, W. L. Sarney, S. P. Svensson, S. V. Novikov, C. T. Foxon, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 142104 (2015)
https://doi.org/10.1063/1.4932592
Published: October 2015
View articletitled, Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range
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Journal Articles

Growth and characterization of highly mismatched GaN1−xSbx alloys

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K. M. Yu, S. V. Novikov, Min Ting, W. L. Sarney, S. P. Svensson, M. Shaw, R. W. Martin, W. Walukiewicz, C. T. Foxon
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 123704 (2014)
https://doi.org/10.1063/1.4896364
Published: September 2014
View articletitled, Growth and characterization of highly mismatched GaN1−xSbx alloys
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Journal Articles

Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As

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Yuanyuan Li, Y. F. Cao, G. N. Wei, Yanyong Li, Y. Ji, K. Y. Wang, K. W. Edmonds, R. P. Campion, A. W. Rushforth, C. T. Foxon, B. L. Gallagher
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 022401 (2013)
https://doi.org/10.1063/1.4813085
Published: July 2013
View articletitled, Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As
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Journal Articles

Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range

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A. X. Levander, K. M. Yu, S. V. Novikov, Z. Liliental-Weber, C. T. Foxon, O. D. Dubon, J. Wu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 243505 (2013)
https://doi.org/10.1063/1.4812277
Published: June 2013
View articletitled, Local structure of amorphous GaN1−xAsx semiconductor alloys across the composition range
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Journal Articles

Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

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M. Wang, A. W. Rushforth, A. T. Hindmarch, R. P. Campion, K. W. Edmonds, C. R. Staddon, C. T. Foxon, B. L. Gallagher
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 112404 (2013)
https://doi.org/10.1063/1.4795444
Published: March 2013
View articletitled, Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films
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Journal Articles

Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy

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K. M. Yu, W. L. Sarney, S. V. Novikov, D. Detert, R. Zhao, J. D. Denlinger, S. P. Svensson, O. D. Dubon, W. Walukiewicz, C. T. Foxon
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 102104 (2013)
https://doi.org/10.1063/1.4795446
Published: March 2013
View articletitled, Highly mismatched N-rich GaN1−xSbx films grown by low temperature molecular beam epitaxy
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Journal Articles

Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)

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B. Howells, M. Wang, K. W. Edmonds, P. Wadley, R. P. Campion, A. W. Rushforth, C. T. Foxon, B. L. Gallagher
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 052407 (2013)
https://doi.org/10.1063/1.4791580
Published: February 2013
View articletitled, Crystalline anisotropic magnetoresistance in quaternary ferromagnetic semiconductor (Ga,Mn)(As,Sb)
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Journal Articles

Ultrafast Acoustic Gating of Photocurrent in Nanodevices With a Quantum Well

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D. Moss, A. V. Akimov, B. A. Glavin, O. Makarovsky, R. P. Campion, M. Henini, C. T. Foxon, L. Eaves, A. J. Kent
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 271–272 (2011)
https://doi.org/10.1063/1.3666358
Published: December 2011
View articletitled, Ultrafast Acoustic Gating of Photocurrent in Nanodevices With a Quantum Well
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Journal Articles

Doping of GaN1−xAsx with high As content

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A. X. Levander, S. V. Novikov, Z. Liliental-Weber, R. dos Reis, O. D. Dubon, J. Wu, C. T. Foxon, K. M. Yu, W. Walukiewicz
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 093702 (2011)
https://doi.org/10.1063/1.3657779
Published: November 2011
View articletitled, Doping of GaN1−xAsx with high As content
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Journal Articles

Carrier localization and related photoluminescence in cubic AlGaN epilayers

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R. E. L. Powell, S. V. Novikov, F. Luckert, P. R. Edwards, A. V. Akimov, C. T. Foxon, R. W. Martin, A. J. Kent
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 063517 (2011)
https://doi.org/10.1063/1.3632988
Published: September 2011
View articletitled, Carrier localization and related photoluminescence in cubic AlGaN epilayers
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Journal Articles

Thermal stability of amorphous GaN 1 − x As x alloys

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A. X. Levander, Z. Liliental-Weber, R. Broesler, M. E. Hawkridge, S. V. Novikov, C. T. Foxon, O. D. Dubon, J. Wu, W. Walukiewicz, K. M. Yu
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 161902 (2011)
https://doi.org/10.1063/1.3581894
Published: April 2011
View articletitled, Thermal stability of amorphous GaN 1 − x As x alloys
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Journal Articles

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

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K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 262102 (2010)
https://doi.org/10.1063/1.3532095
Published: December 2010
View articletitled, Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device
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Journal Articles

GaN 1 − x Bi x : Extremely mismatched semiconductor alloys

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A. X. Levander, K. M. Yu, S. V. Novikov, A. Tseng, C. T. Foxon, O. D. Dubon, J. Wu, W. Walukiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 141919 (2010)
https://doi.org/10.1063/1.3499753
Published: October 2010
View articletitled, GaN 1 − x Bi x : Extremely mismatched semiconductor alloys
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Journal Articles

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

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A. Casiraghi, A. W. Rushforth, M. Wang, N. R. S. Farley, P. Wadley, J. L. Hall, C. R. Staddon, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 122504 (2010)
https://doi.org/10.1063/1.3491841
Published: September 2010
View articletitled, Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
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Journal Articles

Current-voltage characteristics of zinc-blende (cubic) Al 0.3 Ga 0.7 N / GaN double barrier resonant tunneling diodes

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N. Zainal, S. V. Novikov, C. J. Mellor, C. T. Foxon, A. J. Kent
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 112102 (2010)
https://doi.org/10.1063/1.3488819
Published: September 2010
View articletitled, Current-voltage characteristics of zinc-blende (cubic) Al 0.3 Ga 0.7 N / GaN double barrier resonant tunneling diodes
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Journal Articles

Low gap amorphous GaN 1 − x As x alloys grown on glass substrate

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K. M. Yu, S. V. Novikov, R. Broesler, Z. Liliental-Weber, A. X. Levander, V. M. Kao, O. D. Dubon, J. Wu, W. Walukiewicz, C. T. Foxon
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 101906 (2010)
https://doi.org/10.1063/1.3488826
Published: September 2010
View articletitled, Low gap amorphous GaN 1 − x As x alloys grown on glass substrate
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Journal Articles

Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production

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S. V. Novikov, C. R. Staddon, C. T. Foxon, K. M. Yu, R. Broesler, M. Hawkridge, Z. Liliental-Weber, W. Walukiewicz, J. Denlinger, I. Demchenko
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3B12–C3B16 (2010)
https://doi.org/10.1116/1.3368600
Published: March 2010
View articletitled, Molecular beam epitaxy of GaNAs alloys with high As content for potential photoanode applications in hydrogen production
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Journal Articles

Modulated beam mass spectrometer studies of a Mark V Veeco cracker

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R. P. Campion, C. T. Foxon, R. C. Bresnahan
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3F1–C3F4 (2010)
https://doi.org/10.1116/1.3368573
Published: March 2010
View articletitled, Modulated beam mass spectrometer studies of a Mark V Veeco cracker
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Journal Articles

Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

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S. V. Novikov, N. Zainal, A. V. Akimov, C. R. Staddon, A. J. Kent, C. T. Foxon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C3B1–C3B6 (2010)
https://doi.org/10.1116/1.3276426
Published: March 2010
View articletitled, Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates
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Journal Articles

Atomic scale characterization of Mn doped InAs/GaAs quantum dots

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M. Bozkurt, V. A. Grant, J. M. Ulloa, R. P. Campion, C. T. Foxon, E. Marega, Jr., G. J. Salamo, P. M. Koenraad
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 042108 (2010)
https://doi.org/10.1063/1.3293296
Published: January 2010
View articletitled, Atomic scale characterization of Mn doped InAs/GaAs quantum dots
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