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Journal Articles

Г -L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

C. R. Bolognesi, O. J. S. Ostinelli

Appl. Phys. Lett. 119, 242103 (2021)

https://doi.org/10.1063/5.0060423

Published: December 2021

View article titled, Г -L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

Journal Articles

n⁺-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

L. Lugani, M. Malinverni, S. Tirelli, D. Marti, E. Giraud, J.-F. Carlin, C. R. Bolognesi, N. Grandjean

Appl. Phys. Lett. 105, 202113 (2014)

https://doi.org/10.1063/1.4902347

Published: November 2014

View article titled, n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Journal Articles

Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors

O. Ostinelli, A. R. Alt, R. Lövblom, C. R. Bolognesi

J. Appl. Phys. 108, 114502 (2010)

https://doi.org/10.1063/1.3516490

Published: December 2010

View article titled, Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors

Journal Articles

Kirk effect mechanism in type-II In P ∕ Ga As Sb double heterojunction bipolar transistors

N. G. Tao, C. R. Bolognesi

J. Appl. Phys. 102, 064511 (2007)

https://doi.org/10.1063/1.2783764

Published: September 2007

View article titled, Kirk effect mechanism in type-II In P ∕ Ga As Sb double heterojunction bipolar transistors

Journal Articles

Anomalous behavior of Al Ga N ∕ Ga N heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

H. F. Sun, C. R. Bolognesi

Appl. Phys. Lett. 90, 123505 (2007)

https://doi.org/10.1063/1.2715032

Published: March 2007

View article titled, Anomalous behavior of Al Ga N ∕ Ga N heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Journal Articles

Ozone passivation of slow transient current collapse in AlGaN ∕ GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

D. W. DiSanto, H. F. Sun, C. R. Bolognesi

Appl. Phys. Lett. 88, 013504 (2006)

https://doi.org/10.1063/1.2161810

Published: January 2006

View article titled, Ozone passivation of slow transient current collapse in AlGaN ∕ GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

Journal Articles

Neutral base recombination in InP ∕ GaAsSb ∕ InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p + GaAsSb base layers

C. R. Bolognesi, H. G. Liu, N. Tao, X. Zhang, S. Bagheri-Najimi, S. P. Watkins

Appl. Phys. Lett. 86, 253506 (2005)

https://doi.org/10.1063/1.1949290

Published: June 2005

View article titled, Neutral base recombination in InP ∕ GaAsSb ∕ InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p + GaAsSb base layers

Journal Articles

Characterization of InP electron-initiated impact ionization in low electric fields using abrupt junction NpN InP/GaAsSb/InP double heterojunction bipolar transistors

S. Lam, C. R. Bolognesi, S. P. Watkins

Appl. Phys. Lett. 83, 5548–5550 (2003)

https://doi.org/10.1063/1.1637446

Published: December 2003

View article titled, Characterization of InP electron-initiated impact ionization in low electric fields using abrupt junction NpN InP/GaAsSb/InP double heterojunction bipolar transistors

Journal Articles

Local vibrational modes of carbon in GaSb and GaAsSb

X. K. Chen, R. Wiersma, C. X. Wang, O. J. Pitts, C. Dale, C. R. Bolognesi, S. P. Watkins

Appl. Phys. Lett. 80, 1942–1944 (2002)

https://doi.org/10.1063/1.1461871

Published: March 2002

View article titled, Local vibrational modes of carbon in GaSb and GaAsSb

Journal Articles

Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb

V. Fink, E. Chevalier, O. J. Pitts, M. W. Dvorak, K. L. Kavanagh, C. R. Bolognesi, S. P. Watkins, S. Hummel, N. Moll

Appl. Phys. Lett. 79, 2384–2386 (2001)

https://doi.org/10.1063/1.1406982

Published: October 2001

View article titled, Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb

Journal Articles

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

H. Maher, D. W. DiSanto, G. Soerensen, C. R. Bolognesi, H. Tang, J. B. Webb

Appl. Phys. Lett. 77, 3833–3835 (2000)

https://doi.org/10.1063/1.1330226

Published: December 2000

View article titled, Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Journal Articles

Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors

M. W. Dvorak, N. Matine, C. R. Bolognesi, X. G. Xu, S. P. Watkins

J. Vac. Sci. Technol. A 18, 761–764 (2000)

https://doi.org/10.1116/1.582175

Published: March 2000

View article titled, Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors

Journal Articles

Metalorganic vapor phase epitaxy of high-quality GaAs 0.5 Sb 0.5 and its application to heterostructure bipolar transistors

X. G. Xu, J. Hu, S. P. Watkins, N. Matine, M. W. Dvorak, C. R. Bolognesi

Appl. Phys. Lett. 74, 976–978 (1999)

https://doi.org/10.1063/1.123428

Published: February 1999

View article titled, Metalorganic vapor phase epitaxy of high-quality GaAs 0.5 Sb 0.5 and its application to heterostructure bipolar transistors

Journal Articles

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

J. Hu, X. G. Xu, J. A. H. Stotz, S. P. Watkins, A. E. Curzon, M. L. W. Thewalt, N. Matine, C. R. Bolognesi

Appl. Phys. Lett. 73, 2799–2801 (1998)

https://doi.org/10.1063/1.122594

Published: November 1998

View article titled, Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Journal Articles

InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier

C. R. Bolognesi, M. W. Dvorak, D. H. Chow

J. Vac. Sci. Technol. A 16, 843–845 (1998)

https://doi.org/10.1116/1.581035

Published: March 1998

View article titled, InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier

Journal Articles

Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization

D. A. Harrison, R. Arès, S. P. Watkins, M. L. W. Thewalt, C. R. Bolognesi, D. J. S. Beckett, A. J. SpringThorpe

Appl. Phys. Lett. 70, 3275–3277 (1997)

https://doi.org/10.1063/1.118426

Published: June 1997

View article titled, Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization

Journal Articles

InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers

C. R. Bolognesi, J. E. Bryce, D. H. Chow

Appl. Phys. Lett. 69, 3531–3533 (1996)

https://doi.org/10.1063/1.117235

Published: December 1996

View article titled, InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers

Journal Articles

Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage

S. J. Koester, C. R. Bolognesi, E. L. Hu, H. Kroemer, M. J. Rooks, G. L. Snider

J. Vac. Sci. Technol. B 11, 2528–2531 (1993)

https://doi.org/10.1116/1.586660

Published: November 1993

View article titled, Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage

Journal Articles

On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy

C. R. Bolognesi, I. Sela, J. Ibbetson, B. Brar, H. Kroemer, J. H. English

J. Vac. Sci. Technol. B 11, 868–871 (1993)

https://doi.org/10.1116/1.586768

Published: May 1993

View article titled, On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy

Journal Articles

Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells

S. J. Koester, C. R. Bolognesi, M. J. Rooks, E. L. Hu, H. Kroemer

Appl. Phys. Lett. 62, 1373–1375 (1993)

https://doi.org/10.1063/1.108683

Published: March 1993

View article titled, Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells

NARROW

Topics

Г -L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys

n⁺-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts

Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors

Kirk effect mechanism in type-II In P ∕ Ga As Sb double heterojunction bipolar transistors

Anomalous behavior of Al Ga N ∕ Ga N heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Ozone passivation of slow transient current collapse in AlGaN ∕ GaN field-effect transistors: The role of threading dislocations and the passivation mechanism

Neutral base recombination in InP ∕ GaAsSb ∕ InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p + GaAsSb base layers

Characterization of InP electron-initiated impact ionization in low electric fields using abrupt junction NpN InP/GaAsSb/InP double heterojunction bipolar transistors

Local vibrational modes of carbon in GaSb and GaAsSb

Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb

Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors

Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors

Metalorganic vapor phase epitaxy of high-quality GaAs 0.5 Sb 0.5 and its application to heterostructure bipolar transistors

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

InAs/AlSb heterostructure field-effect transistors using a Si-doped InAs/AlSb short-period superlattice modulation doping barrier

Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization

InAs channel heterostructure‐field effect transistors with InAs/AlSb short‐period superlattice barriers

Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage

On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy

Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells

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