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Journal Articles

Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system

Shun-Tsung Lo, Chang-Shun Hsu, Y. M. Lin, S.-D. Lin, C. P. Lee, Sheng-Han Ho, Chiashain Chuang, Yi-Ting Wang, C.-T. Liang

Appl. Phys. Lett. 105, 012106 (2014)

https://doi.org/10.1063/1.4889847

Published: July 2014

View article titled, Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system

Journal Articles

Electrical characteristics of Ni Ohmic contact on n-type GeSn

H. Li, H. H. Cheng, L. C. Lee, C. P. Lee, L. H. Su, Y. W. Suen

Appl. Phys. Lett. 104, 241904 (2014)

https://doi.org/10.1063/1.4883748

Published: June 2014

View article titled, Electrical characteristics of Ni Ohmic contact on n-type GeSn

Journal Articles

Effect of interfacial layer on the crystal structure of InAs/AlAs_0.16Sb_0.84/AlSb quantum wells

Y. M. Lin, C. H. Chen, C. P. Lee

J. Appl. Phys. 115, 164304 (2014)

https://doi.org/10.1063/1.4872138

Published: April 2014

View article titled, Effect of interfacial layer on the crystal structure of InAs/AlAs<sub>0.16</sub>Sb<sub>0.84</sub>/AlSb quantum wells

Journal Articles

Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser

H. C. Cheng, Q. Y. Wu, C. H. Pan, C. P. Lee, G. Lin

Appl. Phys. Lett. 103, 211109 (2013)

https://doi.org/10.1063/1.4833025

Published: November 2013

View article titled, Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser

Journal Articles

Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications

C. H. Pan, C. P. Lee

J. Appl. Phys. 113, 043112 (2013)

https://doi.org/10.1063/1.4789634

Published: January 2013

View article titled, Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications

Journal Articles

Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

C. H. Chen, H. Niu, D. C. Yan, H. H. Hsieh, C. P. Lee, C. C. Chi

Appl. Phys. Lett. 100, 242412 (2012)

https://doi.org/10.1063/1.4729752

Published: June 2012

View article titled, Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

Includes: Supplementary data

Journal Articles

Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix

T. C. Lin, Y. H. Wu, L. C. Li, Y. T. Sung, S. D. Lin, L. Chang, Y. W. Suen, C. P. Lee

J. Appl. Phys. 108, 123503 (2010)

https://doi.org/10.1063/1.3520669

Published: December 2010

View article titled, Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix

Journal Articles

2 – 3 μ m mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates

C. H. Pan, S. D. Lin, C. P. Lee

J. Appl. Phys. 108, 103105 (2010)

https://doi.org/10.1063/1.3506427

Published: November 2010

View article titled, 2 – 3 μ m mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates

Journal Articles

Shape dependent carrier dynamics in InAs/GaAs nanostructures

C. H. Lin, H. S. Ling, S. K. Su, S. D. Lin, C. P. Lee, K. W. Sun

J. Appl. Phys. 106, 113522 (2009)

https://doi.org/10.1063/1.3267851

Published: December 2009

View article titled, Shape dependent carrier dynamics in InAs/GaAs nanostructures

Journal Articles

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, J. L. Shen

Appl. Phys. Lett. 94, 183101 (2009)

https://doi.org/10.1063/1.3130741

Published: May 2009

View article titled, Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

Journal Articles

Characteristics of In(Ga)As quantum ring infrared photodetectors

H. S. Ling, S. Y. Wang, C. P. Lee, M. C. Lo

J. Appl. Phys. 105, 034504 (2009)

https://doi.org/10.1063/1.3075836

Published: February 2009

View article titled, Characteristics of In(Ga)As quantum ring infrared photodetectors

Journal Articles

Energy-dependent carrier relaxation in self-assembled InAs quantum dots

H. S. Ling, C. P. Lee, M. C. Lo

J. Appl. Phys. 103, 124311 (2008)

https://doi.org/10.1063/1.2947599

Published: June 2008

View article titled, Energy-dependent carrier relaxation in self-assembled InAs quantum dots

Journal Articles

High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer

H. S. Ling, S. Y. Wang, C. P. Lee, M. C. Lo

Appl. Phys. Lett. 92, 193506 (2008)

https://doi.org/10.1063/1.2926663

Published: May 2008

View article titled, High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer

Journal Articles

A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors

C. P. Lee, F. Chau, B. Lin, M. Kretschmar, W. Ma

J. Appl. Phys. 103, 094512 (2008)

https://doi.org/10.1063/1.2917069

Published: May 2008

View article titled, A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors

Journal Articles

Transmission electron microscopy studies of GaAs nanostructures in In Ga As ∕ In P matrix grown by molecular beam epitaxy

S. D. Lin, Z. C. Lin, C. P. Lee

J. Appl. Phys. 100, 054312 (2006)

https://doi.org/10.1063/1.2345031

Published: September 2006

View article titled, Transmission electron microscopy studies of GaAs nanostructures in In Ga As ∕ In P matrix grown by molecular beam epitaxy

Journal Articles

Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

K. W. Sun, A. Kechiantz, B. C. Lee, C. P. Lee

Appl. Phys. Lett. 88, 163117 (2006)

https://doi.org/10.1063/1.2197309

Published: April 2006

View article titled, Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

Includes: Supplementary data

Journal Articles

The acoustic radiation force on a heated (or cooled) rigid sphere. Theory

C. P. Lee, T. G. Wang

J. Acoust. Soc. Am. 72, S87 (1982)

https://doi.org/10.1121/1.2020122

Published: August 2005

View article titled, The acoustic radiation force on a heated (or cooled) rigid sphere. Theory

Journal Articles

Direct Experimental Evidence of the Hole Capture by Resonant Levels in Boron Doped Silicon

S. T. Yen, V. Tulupenko, E. S. Cheng, A. Dalakyan, C. P. Lee, K. A. Chao, V. Belykh, A. Abramov, V. Ryzhkov

AIP Conf. Proc. 772, 1192–1193 (2005)

https://doi.org/10.1063/1.1994538

Published: June 2005

View article titled, Direct Experimental Evidence of the Hole Capture by Resonant Levels in Boron Doped Silicon

Journal Articles

High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems

W. H. Hsieh, C. H. Kuan, Y. W. Suen, S. Y. Chang, L. C. Li, B. C. Lee, C. P. Lee

Appl. Phys. Lett. 85, 4196–4198 (2004)

https://doi.org/10.1063/1.1814797

Published: November 2004

View article titled, High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems

Journal Articles

Evidence for capture of holes into resonant states in boron-doped silicon

S. T. Yen, V. N. Tulupenko, E. S. Cheng, P. K. Chung, C. P. Lee, A. T. Dalakyan, K. A. Chao

J. Appl. Phys. 96, 4970–4975 (2004)

https://doi.org/10.1063/1.1795985

Published: November 2004

View article titled, Evidence for capture of holes into resonant states in boron-doped silicon

NARROW

Topics

Insulating state to quantum Hall-like state transition in a spin-orbit-coupled two-dimensional electron system

Electrical characteristics of Ni Ohmic contact on n-type GeSn

Effect of interfacial layer on the crystal structure of InAs/AlAs_0.16Sb_0.84/AlSb quantum wells

Low repetition rate and broad frequency tuning from a grating-coupled passively mode-locked quantum dot laser

Design and modeling of InP-based InGaAs/GaAsSb type-II “W” type quantum wells for mid-Infrared laser applications

Ferromagnetic GeMn thin film prepared by ion implantation and ion beam induced epitaxial crystallization annealing

Electron delocalization of tensily strained GaAs quantum dots in GaSb matrix

2 – 3 μ m mid infrared light sources using InGaAs/GaAsSb “W” type quantum wells on InP substrates

Shape dependent carrier dynamics in InAs/GaAs nanostructures

Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring

Characteristics of In(Ga)As quantum ring infrared photodetectors

Energy-dependent carrier relaxation in self-assembled InAs quantum dots

High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer

A phenomenological model for the reliability of GaAs based heterojunction bipolar transistors

Transmission electron microscopy studies of GaAs nanostructures in In Ga As ∕ In P matrix grown by molecular beam epitaxy

Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dots

The acoustic radiation force on a heated (or cooled) rigid sphere. Theory

Direct Experimental Evidence of the Hole Capture by Resonant Levels in Boron Doped Silicon

High-sensitivity microwave vector detection at extremely low-power levels for low-dimensional electron systems

Evidence for capture of holes into resonant states in boron-doped silicon

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