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C. Jagadish
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Journal Articles

Erratum: “Review of zincblende ZnO: Stability of metastable ZnO phases” [J. Appl. Phys. 102, 071101 (2007)]

A. Ashrafi, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 127, 049901 (2020)
https://doi.org/10.1063/1.5143165
Published: January 2020
View article titled, Erratum: “Review of zincblende ZnO: Stability of metastable ZnO phases” [J. Appl. Phys. 102, 071101 (2007)]
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Journal Articles

Band alignment and band bending at α-Ga2O3/ZnO n-n isotype hetero-interface

X. H. Chen, Y. T. Chen, F.-F. Ren, S. L. Gu, H. H. Tan, C. Jagadish, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 202101 (2019)
https://doi.org/10.1063/1.5126325
Published: November 2019
View article titled, Band alignment and band bending at <em>α</em>-Ga<sub>2</sub>O<sub>3</sub>/ZnO n-n isotype hetero-interface
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Includes: Supplementary data
Journal Articles

On the origin of dislocation generation and annihilation in α -Ga2O3 epilayers on sapphire

T. C. Ma, X. H. Chen, Y. Kuang, L. Li, J. Li, F. Kremer, F.-F. Ren, S. L. Gu, R. Zhang, Y. D. Zheng, H. H. Tan, C. Jagadish, J. D. Ye
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 182101 (2019)
https://doi.org/10.1063/1.5120554
Published: October 2019
View article titled, On the origin of dislocation generation and annihilation in <em>α</em> -Ga<sub>2</sub>O<sub>3</sub> epilayers on sapphire
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Journal Articles

Zn precipitation and Li depletion in Zn implanted ZnO

K. S. Chan, L. Vines, L. Li, C. Jagadish, B. G. Svensson, J. Wong-Leung
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 022102 (2016)
https://doi.org/10.1063/1.4958693
Published: July 2016
View article titled, Zn precipitation and Li depletion in Zn implanted ZnO
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Includes: Supplementary data
Journal Articles

Equilibrium shape of nano-cavities in H implanted ZnO

K. S. Chan, L. Vines, L. Li, C. Jagadish, B. G. Svensson, J. Wong-Leung
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 212102 (2015)
https://doi.org/10.1063/1.4921788
Published: May 2015
View article titled, Equilibrium shape of nano-cavities in H implanted ZnO
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Journal Articles

Interfacial and bulk polaron masses in Zn1−xMgxO/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy

J. Lloyd-Hughes, M. Failla, J. Ye, S. P. P. Jones, K. L. Teo, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 202103 (2015)
https://doi.org/10.1063/1.4921469
Published: May 2015
View article titled, Interfacial and bulk polaron masses in Zn<sub>1−</sub><sub><em>x</em></sub>Mg<sub><em>x</em></sub>O/ZnO heterostructures examined by terahertz time-domain cyclotron spectroscopy
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Journal Articles

Quantum confinement of excitons in wurtzite InP nanowires

K. Pemasiri, H. E. Jackson, L. M. Smith, B. M. Wong, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 194306 (2015)
https://doi.org/10.1063/1.4921109
Published: May 2015
View article titled, Quantum confinement of excitons in wurtzite InP nanowires
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Journal Articles

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition

Z. B. Chen, W. Lei, B. Chen, Y. B. Wang, X. Z. Liao, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 022108 (2014)
https://doi.org/10.1063/1.4859915
Published: January 2014
View article titled, Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition
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Journal Articles

Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius

D. J. Little, R. L. Kuruwita, A. Joyce, Q. Gao, T. Burgess, C. Jagadish, D. M. Kane
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 161107 (2013)
https://doi.org/10.1063/1.4825153
Published: October 2013
View article titled, Phase-stepping interferometry of GaAs nanowires: Determining nano-wire radius
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Journal Articles

Defect formation and thermal stability of H in high dose H implanted ZnO

K. S. Chan, L. Vines, K. M. Johansen, E. V. Monakhov, J. D. Ye, P. Parkinson, C. Jagadish, B. G. Svensson, J. Wong-Leung
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 083111 (2013)
https://doi.org/10.1063/1.4819216
Published: August 2013
View article titled, Defect formation and thermal stability of H in high dose H implanted ZnO
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Journal Articles

A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination

G. Jolley, L. Faraone, L. Fu, H. F. Lu, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 213903 (2013)
https://doi.org/10.1063/1.4807506
Published: May 2013
View article titled, A study of quantum well solar cell structures with bound-to-continuum transitions for reduced carrier recombination
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Journal Articles

Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique

W. Lei, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 033111 (2013)
https://doi.org/10.1063/1.4789513
Published: January 2013
View article titled, Engineering the composition, morphology, and optical properties of InAsSb nanostructures <em>via</em> graded growth technique
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Journal Articles

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1−xAs core-shell nanowires

N. Jiang, P. Parkinson, Q. Gao, S. Breuer, H. H. Tan, J. Wong-Leung, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 023111 (2012)
https://doi.org/10.1063/1.4735002
Published: July 2012
View article titled, Long minority carrier lifetime in Au-catalyzed GaAs/Al<sub>x</sub>Ga<sub>1−x</sub>As core-shell nanowires
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Journal Articles

The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors

G. Jolley, I. McKerracher, L. Fu, H. H. Tan, C. Jagadish
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 123719 (2012)
https://doi.org/10.1063/1.4729833
Published: June 2012
View article titled, The conduction band absorption spectrum of interdiffused InGaAs/GaAs quantum dot infrared photodetectors
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Journal Articles

Acceptor-like deep level defects in ion-implanted ZnO

L. Vines, J. Wong-Leung, C. Jagadish, V. Quemener, E. V. Monakhov, B. G. Svensson
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 212106 (2012)
https://doi.org/10.1063/1.4720514
Published: May 2012
View article titled, Acceptor-like deep level defects in ion-implanted ZnO
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Journal Articles

Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon

B. C. Johnson, B. J. Villis, J. E. Burgess, N. Stavrias, J. C. McCallum, S. Charnvanichborikarn, J. Wong-Leung, C. Jagadish, J. S. Williams
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 094910 (2012)
https://doi.org/10.1063/1.4710991
Published: May 2012
View article titled, Dopant effects on the photoluminescence of interstitial-related centers in ion implanted silicon
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Journal Articles

Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires

M. A. Fickenscher, H. E. Jackson, L. M. Smith, J. M. Yarrison-Rice, J. H. Kang, S. Paiman, Q. Gao, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 263110 (2011)
https://doi.org/10.1063/1.3671367
Published: December 2011
View article titled, Direct imaging of the spatial diffusion of excitons in single semiconductor nanowires
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Includes: Supplementary data
Journal Articles

Direct Measure of Strain and Electronic Structure in GaAs/GaP Core‐Shell Nanowires

H. E. Jackson, M. Montazeri, M. Fickenscher, L. M. Smith, J. M. Yarrison‐Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, J. Zou, M. E. Pistol, C. E. Pryor
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 477–478 (2011)
https://doi.org/10.1063/1.3666461
Published: December 2011
View article titled, Direct Measure of Strain and Electronic Structure in GaAs/GaP Core‐Shell Nanowires
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Journal Articles

Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy

H. E. Jackson, S. Perera, K. Pemasiri, L. M. Smith, J. Yarrison‐Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, J. Zou
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 481–482 (2011)
https://doi.org/10.1063/1.3666463
Published: December 2011
View article titled, Probing the valence band structure of wurtzite InP nanowires by photoluminescence excitation spectroscopy
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Journal Articles

Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures via Sb exposure

W. Lei, H. H. Tan, C. Jagadish
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 193110 (2011)
https://doi.org/10.1063/1.3659695
Published: November 2011
View article titled, Controlling the morphology and optical properties of self-assembled InAsSb/InGaAs/InP nanostructures <em>via</em> Sb exposure
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