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Journal Articles

The efficiency of electric bus shuttle services in UTM campus: A pilot study

M. A. Abas, M. I. Ardani, M. Mohamad, C. H. Ling, S. N. Abdul Latif, S. M. F. Syed Mohamad, A. M. Halim
Journal: AIP Conference Proceedings
AIP Conf. Proc. 2059, 020028 (2019)
https://doi.org/10.1063/1.5085971
Published: January 2019
View article titled, The efficiency of electric bus shuttle services in UTM campus: A pilot study
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Journal Articles

Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias

C. H. Ang, C. H. Ling, Z. Y. Cheng, B. J. Cho, S. J. Kim
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 3087–3089 (2000)
https://doi.org/10.1063/1.1287403
Published: September 2000
View article titled, Reduction of stress-induced leakage currents in thin oxides by application of a low post-stress gate bias
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Journal Articles

Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide

C. H. Ang, C. H. Ling, Z. Y. Cheng, B. J. Cho
Journal: Journal of Applied Physics
J. Appl. Phys. 88, 2872–2876 (2000)
https://doi.org/10.1063/1.1288169
Published: September 2000
View article titled, Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide
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Journal Articles

A model for minority carrier lifetime variation in the oxide–silicon structure following 253.7 nm ultraviolet irradiation

Z. Y. Cheng, C. H. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 83, 5289–5294 (1998)
https://doi.org/10.1063/1.367353
Published: May 1998
View article titled, A model for minority carrier lifetime variation in the oxide–silicon structure following 253.7 nm ultraviolet irradiation
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Journal Articles

An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements

C. H. Ling, Z. Y. Cheng
Journal: Applied Physics Letters
Appl. Phys. Lett. 71, 3218–3220 (1997)
https://doi.org/10.1063/1.120295
Published: December 1997
View article titled, An improved analysis for the determination of trap levels in silicon from laser microwave photoconductive decay measurements
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Journal Articles

Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films

W. K. Choi, F. L. Loo, C. H. Ling, F. C. Loh, K. L. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 78, 7289–7294 (1995)
https://doi.org/10.1063/1.360377
Published: December 1995
View article titled, Structural and electrical studies of radio frequency sputtered hydrogenated amorphous silicon carbide films
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Journal Articles

Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements

C. H. Ling, J. Bhaskaran, W. K. Choi, L. K. Ah
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 6350–6353 (1995)
https://doi.org/10.1063/1.359588
Published: June 1995
View article titled, Study of rf‐sputtered yttrium oxide films on silicon by capacitance measurements
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Journal Articles

Structural properties of amorphous silicon carbide films by plasma‐enhanced chemical vapor deposition

W. K. Choi, Y. M. Chan, C. H. Ling, Y. Lee, R. Gopalakrishnan, K. L. Tan
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 827–832 (1995)
https://doi.org/10.1063/1.359006
Published: January 1995
View article titled, Structural properties of amorphous silicon carbide films by plasma‐enhanced chemical vapor deposition
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Journal Articles

Trap generation at Si/SiO2 interface in submicrometer metal‐oxide‐semiconductor transistors by 4.9 eV ultraviolet irradiation

C. H. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 76, 581–583 (1994)
https://doi.org/10.1063/1.357046
Published: July 1994
View article titled, Trap generation at Si/SiO<sub>2</sub> interface in submicrometer metal‐oxide‐semiconductor transistors by 4.9 eV ultraviolet irradiation
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Journal Articles

Analysis of the variation in the field‐dependent behavior of thermally oxidized tantalum oxide films

W. K. Choi, C. H. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 75, 3987–3990 (1994)
https://doi.org/10.1063/1.356020
Published: April 1994
View article titled, Analysis of the variation in the field‐dependent behavior of thermally oxidized tantalum oxide films
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Journal Articles

Observation of a high‐resistance to a low‐resistance transition in a silicon bicrystal

C. H. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 62, 4291–4293 (1987)
https://doi.org/10.1063/1.339104
Published: November 1987
View article titled, Observation of a high‐resistance to a low‐resistance transition in a silicon bicrystal
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Journal Articles

Plasma‐enhanced chemical vapor deposition SiN films: Some electrical properties

C. H. Ling, C. Y. Kwok, K. Prasad
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 5, 1874–1878 (1987)
https://doi.org/10.1116/1.574476
Published: July 1987
View article titled, Plasma‐enhanced chemical vapor deposition SiN films: Some electrical properties
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