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Journal Articles

Incorporation of boron during the growth of GaAs single crystals

C. G. Hopkins, V. R. Deline, R. J. Blattner, C. A. Evans, Jr., T. J. Magee
Journal: Applied Physics Letters
Appl. Phys. Lett. 36, 989–990 (1980)
https://doi.org/10.1063/1.91393
Published: July 2008
View article titled, Incorporation of boron during the growth of GaAs single crystals
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Journal Articles

The morphology and characteristics of TaSi2/Si films oxidized at high pressure

Yangyuan Wang, Jinhua Chen, Jiang Tao, Sunqi Feng, Ai‐Zhen Zhang, J. B. Stimmell, C. G. Hopkins, M. D. Strathman, M. H. Herman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 5, 1756–1759 (1987)
https://doi.org/10.1116/1.583633
Published: November 1987
View article titled, The morphology and characteristics of TaSi<sub>2</sub>/Si films oxidized at high pressure
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Journal Articles

Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si

R. G. Wilson, D. M. Jamba, D. K. Sadana, C. G. Hopkins
Journal: Journal of Applied Physics
J. Appl. Phys. 61, 1355–1358 (1987)
https://doi.org/10.1063/1.338952
Published: February 1987
View article titled, Range and shape factors, damage, regrowth, and redistribution for Ag implants in (100) and (111) Si
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Journal Articles

Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation

R. G. Wilson, D. M. Jamba, P. K. Chu, C. G. Hopkins, C. J. Hitzman
Journal: Journal of Applied Physics
J. Appl. Phys. 60, 2806–2809 (1986)
https://doi.org/10.1063/1.337061
Published: October 1986
View article titled, Atom and acceptor depth distributions for aluminum channeled in silicon as a function of ion energy and crystal orientation
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Journal Articles

Dopant redistribution during Pd2Si formation using rapid thermal annealing

N. S. Alvi, D. L. Kwong, C. G. Hopkins, S. G. Bauman
Journal: Applied Physics Letters
Appl. Phys. Lett. 48, 1433–1435 (1986)
https://doi.org/10.1063/1.96880
Published: May 1986
View article titled, Dopant redistribution during Pd<sub>2</sub>Si formation using rapid thermal annealing
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Journal Articles

Properties and structure of coevaporated NbSi2

Wu Guoying, Zhang Guobing, Wang Yang Yuan, Xu Wei, Li Yong Hong, C. G. Hopkins, M. D. Strathman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 3, 1702–1706 (1985)
https://doi.org/10.1116/1.582939
Published: November 1985
View article titled, Properties and structure of coevaporated NbSi<sub>2</sub>
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Journal Articles

Channeling of aluminum in silicon

R. G. Wilson, C. G. Hopkins
Journal: Journal of Applied Physics
J. Appl. Phys. 57, 4517–4519 (1985)
https://doi.org/10.1063/1.335351
Published: May 1985
View article titled, Channeling of aluminum in silicon
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Journal Articles

Unannealed and annealed depth distributions of mercury implanted into silicon

R. G. Wilson, D. M. Jamba, C. G. Hopkins, J. C. Norberg
Journal: Journal of Applied Physics
J. Appl. Phys. 55, 327–330 (1984)
https://doi.org/10.1063/1.333075
Published: January 1984
View article titled, Unannealed and annealed depth distributions of mercury implanted into silicon
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Journal Articles

Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs

R. G. Wilson, C. A. Evans, Jr., J. C Norberg, C. G. Hopkins, Y. S. Park
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 6868–6874 (1983)
https://doi.org/10.1063/1.331991
Published: December 1983
View article titled, Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs
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Journal Articles

Depth distributions and range parameters for He implanted in Si and GaAs

R. G. Wilson, V. R. Deline, C. G. Hopkins
Journal: Applied Physics Letters
Appl. Phys. Lett. 41, 929–931 (1982)
https://doi.org/10.1063/1.93339
Published: November 1982
View article titled, Depth distributions and range parameters for He implanted in Si and GaAs
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Journal Articles

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Published: November 1982
View article titled, Si incorporation in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As grown by molecular beam epitaxy
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Journal Articles

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

T. J. Magee, H. Kawayoshi, R. D. Ormond, L. A. Christel, J. F. Gibbons, C. G. Hopkins, C. A. Evans, Jr., D. S. Day
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 906–908 (1981)
https://doi.org/10.1063/1.92602
Published: December 1981
View article titled, Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
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Journal Articles

Low‐temperature redistribution and gettering of oxygen in silicon

T. J. Magee, C. Leung, H. Kawayoshi, B. Furman, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 52, 5392–5394 (1981)
https://doi.org/10.1063/1.329403
Published: August 1981
View article titled, Low‐temperature redistribution and gettering of oxygen in silicon
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