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Journal Articles

Study of ohmic contacts to n-type Ge: Snowplow and laser activation

A. Firrincieli, K. Martens, R. Rooyackers, B. Vincent, E. Rosseel, E. Simoen, J. Geypen, H. Bender, C. Claeys, J. A. Kittl

Appl. Phys. Lett. 99, 242104 (2011)

https://doi.org/10.1063/1.3666045

Published: December 2011

View article titled, Study of ohmic contacts to n-type Ge: Snowplow and laser activation

Journal Articles

On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p + - n junctions

R. Yang, G. Eneman, G. Wang, C. Claeys, E. Simoen

J. Appl. Phys. 106, 074511 (2009)

https://doi.org/10.1063/1.3238285

Published: October 2009

View article titled, On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p + - n junctions

Journal Articles

Analytical model for the 1 ∕ f noise in the tunneling current through metal-oxide-semiconductor structures

F. Crupi, G. Giusi, G. Iannaccone, P. Magnone, C. Pace, E. Simoen, C. Claeys

J. Appl. Phys. 106, 073710 (2009)

https://doi.org/10.1063/1.3236637

Published: October 2009

View article titled, Analytical model for the 1 ∕ f noise in the tunneling current through metal-oxide-semiconductor structures

Journal Articles

On the 1 / f noise of triple-gate field-effect transistors with high- k gate dielectric

N. Lukyanchikova, N. Garbar, V Kudina, A. Smolanka, S. Put, C. Claeys, E. Simoen

Appl. Phys. Lett. 95, 032101 (2009)

https://doi.org/10.1063/1.3180703

Published: July 2009

View article titled, On the 1 / f noise of triple-gate field-effect transistors with high- k gate dielectric

Journal Articles

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

M. Bargallo Gonzalez, E. Simoen, B. Vissouvanadin, G. Eneman, P. Verheyen, R. Loo, C. Claeys

Appl. Phys. Lett. 94, 233507 (2009)

https://doi.org/10.1063/1.3149707

Published: June 2009

View article titled, Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

Journal Articles

Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

E. Simoen, A. Firrincieli, F. E. Leys, R. Loo, B. De Jaeger, J. Mitard, C. Claeys

AIP Conf. Proc. 1129, 281–284 (2009)

https://doi.org/10.1063/1.3140451

Published: April 2009

View article titled, Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

Journal Articles

Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies

C. Claeys, A. Mercha, E. Simoen

AIP Conf. Proc. 1129, 209–214 (2009)

https://doi.org/10.1063/1.3140432

Published: April 2009

View article titled, Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies

Journal Articles

Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques

W. Guo, R. Talmat, B. Cretu, J.‐M. Routoure, R. Carin, A. Mercha, E. Simoen, C. Claeys

AIP Conf. Proc. 1129, 295–298 (2009)

https://doi.org/10.1063/1.3140454

Published: April 2009

View article titled, Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques

Journal Articles

Low‐Frequency Noise of Strained and Non‐Strained n‐Channel Tri‐Gate FinFETs With Different Gate Dielectrics

N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys

AIP Conf. Proc. 1129, 291–294 (2009)

https://doi.org/10.1063/1.3140453

Published: April 2009

View article titled, Low‐Frequency Noise of Strained and Non‐Strained n‐Channel Tri‐Gate FinFETs With Different Gate Dielectrics

Journal Articles

Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs

M. Rodrigues, A. Mercha, N. Collaert, E. Simoen, C. Claeys, J. A. Martino

AIP Conf. Proc. 1129, 167–170 (2009)

https://doi.org/10.1063/1.3140421

Published: April 2009

View article titled, Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs

Journal Articles

Progressive degradation of Ti N ∕ Si O N and Ti N ∕ Hf O 2 gate stack triple gate SOI nFinFETs subjected to electrical stress

J. M. Rafí, E. Simoen, A. Mercha, N. Collaert, F. Campabadal, C. Claeys

J. Vac. Sci. Technol. B 27, 453–458 (2009)

https://doi.org/10.1116/1.3025883

Published: February 2009

View article titled, Progressive degradation of Ti N ∕ Si O N and Ti N ∕ Hf O 2 gate stack triple gate SOI nFinFETs subjected to electrical stress

Journal Articles

Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, P. Clauws

J. Appl. Phys. 104, 023705 (2008)

https://doi.org/10.1063/1.2956708

Published: July 2008

View article titled, Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Journal Articles

Paramagnetic point defects at interfacial layers in biaxial tensile strained ( 100 ) Si / SiO 2

P. Somers, A. Stesmans, V. V. Afanas’ev, C. Claeys, E. Simoen

J. Appl. Phys. 103, 033703 (2008)

https://doi.org/10.1063/1.2829801

Published: February 2008

View article titled, Paramagnetic point defects at interfacial layers in biaxial tensile strained ( 100 ) Si / SiO 2

Journal Articles

Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

E. Escobedo-Cousin, S. H. Olsen, P. Dobrosz, S. J. Bull, A. G. O’Neill, H. Coulson, C. Claeys, R. Loo, R. Delhougne, M. Caymax

J. Appl. Phys. 102, 123502 (2007)

https://doi.org/10.1063/1.2825042

Published: December 2007

View article titled, Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

Journal Articles

The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium

M. L. David, F. Pailloux, D. Babonneau, M. Drouet, J. F. Barbot, E. Simoen, C. Claeys

J. Appl. Phys. 102, 096101 (2007)

https://doi.org/10.1063/1.2803715

Published: November 2007

View article titled, The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium

Journal Articles

Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack

W. Guo, B. Cretu, J.‐M. Routoure, R. Carin, A. Mercha, E. Simoen, C. Claeys

AIP Conf. Proc. 922, 29–32 (2007)

https://doi.org/10.1063/1.2759630

Published: July 2007

View article titled, Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack

Journal Articles

The Low‐Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions

E. Simoen, P. Verheyen, R. Loo, C. Claeys

AIP Conf. Proc. 922, 83–86 (2007)

https://doi.org/10.1063/1.2759641

Published: July 2007

View article titled, The Low‐Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions

Journal Articles

Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques

N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys

AIP Conf. Proc. 922, 39–42 (2007)

https://doi.org/10.1063/1.2759632

Published: July 2007

View article titled, Behavior of the 1/<em>f</em> noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques

Journal Articles

Low temperature noise spectroscopy of 0.1 μ m partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

I. Lartigau, J. M. Routoure, W. Guo, B. Cretu, R. Carin, A. Mercha, C. Claeys, E. Simoen

J. Appl. Phys. 101, 104511 (2007)

https://doi.org/10.1063/1.2732685

Published: May 2007

View article titled, Low temperature noise spectroscopy of 0.1 μ m partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

Journal Articles

On the origin of the 1 ∕ f noise in shallow germanium p + - n junctions

R. M. Todi, S. Sonde, E. Simoen, C. Claeys, K. B. Sundaram

Appl. Phys. Lett. 90, 043501 (2007)

https://doi.org/10.1063/1.2431759

Published: January 2007

View article titled, On the origin of the 1 ∕ f noise in shallow germanium p + - n junctions

NARROW

Topics

Study of ohmic contacts to n-type Ge: Snowplow and laser activation

On the frequency dispersion of the capacitance-voltage behavior of epitaxial Ge on Si p + - n junctions

Analytical model for the 1 ∕ f noise in the tunneling current through metal-oxide-semiconductor structures

On the 1 / f noise of triple-gate field-effect transistors with high- k gate dielectric

Electric field dependence of trap-assisted-tunneling current in strained SiGe source/drain junctions

Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

Low Frequency Noise Performance of Advanced Si and Ge CMOS Technologies

Low‐Frequency Noise Behavior in P‐channel SOI FinFETs Processed With Different Strain Techniques

Low‐Frequency Noise of Strained and Non‐Strained n‐Channel Tri‐Gate FinFETs With Different Gate Dielectrics

Impact of the TiN Layer Thickness on the Low‐Frequency Noise and Static Device Performance of n‐Channel MuGFETs

Progressive degradation of Ti N ∕ Si O N and Ti N ∕ Hf O 2 gate stack triple gate SOI nFinFETs subjected to electrical stress

Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Paramagnetic point defects at interfacial layers in biaxial tensile strained ( 100 ) Si / SiO 2

Thermal stability of supercritical thickness-strained Si layers on thin strain-relaxed buffers

The effect of the substrate temperature on extended defects created by hydrogen implantation in germanium

Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack

The Low‐Frequency Noise Behavior of pMOSFETs with Embedded SiGe Source/Drain Regions

Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile‐strain‐inducing techniques

Low temperature noise spectroscopy of 0.1 μ m partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

On the origin of the 1 ∕ f noise in shallow germanium p + - n junctions

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