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Journal Articles

Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition

Y. N. Chen, S. J. Xu, C. C. Zheng, J. Q. Ning, F. C. C. Ling, W. Anwand, G. Brauer, W. Skorupa
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 041912 (2014)
https://doi.org/10.1063/1.4892356
Published: August 2014
View articletitled, Nature of red luminescence band in research-grade ZnO single crystals: A “self-activated” configurational transition
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Journal Articles

Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure

S. C. Su, H. Zhu, L. X. Zhang, M. He, L. Z. Zhao, S. F. Yu, J. N. Wang, F. C. C. Ling
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 131104 (2013)
https://doi.org/10.1063/1.4822265
Published: September 2013
View articletitled, Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure
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Journal Articles

A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals

W. Mtangi, M. Schmidt, F. D. Auret, W. E. Meyer, P. J. Janse van Rensburg, M. Diale, J. M. Nel, A. G. M. Das, F. C. C. Ling, A. Chawanda
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 124502 (2013)
https://doi.org/10.1063/1.4796139
Published: March 2013
View articletitled, A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals
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Journal Articles

Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory

X. M. Dai, S. J. Xu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 046102 (2012)
https://doi.org/10.1063/1.4749402
Published: August 2012
View articletitled, Emission bands of nitrogen-implantation induced luminescent centers in ZnO crystals: Experiment and theory
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Journal Articles

Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

C. K. To, B. Yang, S. C. Su, C. C. Ling, C. D. Beling, S. Fung
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 113521 (2011)
https://doi.org/10.1063/1.3665713
Published: December 2011
View articletitled, Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
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Journal Articles

Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals

C. C. Zheng, S. J. Xu, J. Q. Ning, Y. N. Chen, X. H. Lu, C.-C. Ling, C. M. Che, G. Y. Gao, J. H. Hao, G. Brauer, W. Anwand
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 083102 (2011)
https://doi.org/10.1063/1.3651379
Published: October 2011
View articletitled, Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals
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Journal Articles

Characterization of microstructural defects in melt grown ZnO single crystals

W. Anwand, G. Brauer, R. I. Grynszpan, T. E. Cowan, D. Schulz, D. Klimm, J. Čižek, J. Kuriplach, I. Procházka, C. C. Ling, A. B. Djurišić, V. Klemm, G. Schreiber, D. Rafaja
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 063516 (2011)
https://doi.org/10.1063/1.3559264
Published: March 2011
View articletitled, Characterization of microstructural defects in melt grown ZnO single crystals
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Journal Articles

Comprehensive study of the p -type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film

J. C. Fan, C. Y. Zhu, B. Yang, S. Fung, C. D. Beling, G. Brauer, W. Anwand, D. Grambole, W. Skorupa, K. S. Wong, Y. C. Zhong, Z. Xie, C. C. Ling
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 29, 03A103 (2011)
https://doi.org/10.1116/1.3525639
Published: January 2011
View articletitled, Comprehensive study of the p -type conductivity formation in radio frequency magnetron sputtered arsenic-doped ZnO film
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Journal Articles

Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering

J. C. Fan, C. Y. Zhu, S. Fung, Y. C. Zhong, K. S. Wong, Z. Xie, G. Brauer, W. Anwand, W. Skorupa, C. K. To, B. Yang, C. D. Beling, C. C. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 073709 (2009)
https://doi.org/10.1063/1.3236578
Published: October 2009
View articletitled, Arsenic doped p -type zinc oxide films grown by radio frequency magnetron sputtering
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Journal Articles

Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy

J. M. Luo, Z. Q. Zhong, M. Gong, S. Fung, C. C. Ling
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 063711 (2009)
https://doi.org/10.1063/1.3087757
Published: March 2009
View articletitled, Isochronal annealing study of low energy electron irradiated Al-doped p -type 6H silicon carbide with deep level transient spectroscopy
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Journal Articles

Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy

L. Ding, B. K. Li, H. T. He, W. K. Ge, J. N. Wang, J. Q. Ning, X. M. Dai, C. C. Ling, S. J. Xu
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 053511 (2009)
https://doi.org/10.1063/1.3087762
Published: March 2009
View articletitled, Classification of bound exciton complexes in bulk ZnO by magnetophotoluminescence spectroscopy
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Journal Articles

Deep level defects in a nitrogen-implanted ZnO homogeneous p - n junction

Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, L. W. Lu
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 222109 (2008)
https://doi.org/10.1063/1.2940204
Published: June 2008
View articletitled, Deep level defects in a nitrogen-implanted ZnO homogeneous p - n junction
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Journal Articles

Au / n -ZnO rectifying contact fabricated with hydrogen peroxide pretreatment

Q. L. Gu, C. K. Cheung, C. C. Ling, A. M. C. Ng, A. B. Djurišić, L. W. Lu, X. D. Chen, S. Fung, C. D. Beling, H. C. Ong
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 093706 (2008)
https://doi.org/10.1063/1.2912827
Published: May 2008
View articletitled, Au / n -ZnO rectifying contact fabricated with hydrogen peroxide pretreatment
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Journal Articles

Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy

R. S. Wang, Q. L. Gu, C. C. Ling, H. C. Ong
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 042105 (2008)
https://doi.org/10.1063/1.2838326
Published: January 2008
View articletitled, Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy
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Journal Articles

Hydrogen peroxide treatment induced rectifying behavior of Au ∕ n - Zn O contact

Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, H. C. Ong
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 122101 (2007)
https://doi.org/10.1063/1.2715025
Published: March 2007
View articletitled, Hydrogen peroxide treatment induced rectifying behavior of Au ∕ n - Zn O contact
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Journal Articles

Al/GaSb Contact with Slow Positron Beam

Hai-yun Wang, Hui-min Weng, C. C. Ling, Bang-jiao Ye, Xian-yi Zhou
Journal: Chinese Journal of Chemical Physics
Chin. J. Chem. Phys. 19, 169–172 (2006)
https://doi.org/10.1360/cjcp2006.19(2).169.4
Published: August 2006
View articletitled, Al/GaSb Contact with Slow Positron Beam
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Journal Articles

Primary photoluminescence in as-neutron (electron) -irradiated n -type 6H-SiC

Z. Q. Zhong, D. X. Wu, M. Gong, O. Wang, S. L. Shi, S. J. Xu, X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, G. Brauer, W. Anwand, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 093511 (2006)
https://doi.org/10.1063/1.2195014
Published: May 2006
View articletitled, Primary photoluminescence in as-neutron (electron) -irradiated n -type 6H-SiC
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Journal Articles

Current transport studies of Zn O ∕ p - Si heterostructures grown by plasma immersion ion implantation and deposition

X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, Y. F. Mei, Ricky K. Y. Fu, G. G. Siu, Paul. K. Chu
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 132104 (2006)
https://doi.org/10.1063/1.2190444
Published: March 2006
View articletitled, Current transport studies of Zn O ∕ p - Si heterostructures grown by plasma immersion ion implantation and deposition
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Journal Articles

Deep-level defects in n -type 6H silicon carbide induced by He implantation

C. C. Ling, X. D. Chen, G. Brauer, W. Anwand, W. Skorupa, H. Y. Wang, H. M. Weng
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 043508 (2005)
https://doi.org/10.1063/1.2014934
Published: August 2005
View articletitled, Deep-level defects in n -type 6H silicon carbide induced by He implantation
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Journal Articles

Deep level defects E1/E2 in n‐type 6H silicon carbide induced by electron radiation and He‐implantation

C. C. Ling, X. D. Chen, S. Fung, C. D. Beling, G. Brauer, W. Anwand, W. Skorupa, M. Gong
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 99–100 (2005)
https://doi.org/10.1063/1.1994012
Published: June 2005
View articletitled, Deep level defects E1/E2 in n‐type 6H silicon carbide induced by electron radiation and He‐implantation
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