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C. Bru-Chevallier
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Journal Articles

Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths

R. Anufriev, N. Chauvin, H. Khmissi, K. Naji, J.-B. Barakat, J. Penuelas, G. Patriarche, M. Gendry, C. Bru-Chevallier
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 193101 (2013)
https://doi.org/10.1063/1.4804327
Published: May 2013
View article titled, Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths
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Journal Articles

Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics

H. Chouaib, C. Bru-Chevallier
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 172102 (2012)
https://doi.org/10.1063/1.4705408
Published: April 2012
View article titled, Local micro-photoreflectance spectroscopy measurements on type II InGaAlAs/GaAsSb/InP heterojunction bipolar transistor: Correlation with electrical characteristics
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Journal Articles

Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates

N. Chauvin, M. H. Hadj Alouane, R. Anufriev, H. Khmissi, K. Naji, G. Patriarche, C. Bru-Chevallier, M. Gendry
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 011906 (2012)
https://doi.org/10.1063/1.3674985
Published: January 2012
View article titled, Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
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Journal Articles

Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

H. Khmissi, M. Baira, L. Sfaxi, L. Bouzaïene, F. Saidi, C. Bru-Chevallier, H. Maaref
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 054316 (2011)
https://doi.org/10.1063/1.3555100
Published: March 2011
View article titled, Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
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Journal Articles

Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction

H. Khmissi, L. Sfaxi, L. Bouzaïene, F. Saidi, H. Maaref, C. Bru-Chevallier
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 074307 (2010)
https://doi.org/10.1063/1.3371356
Published: April 2010
View article titled, Effect of carriers transfer behavior on the optical properties of InAs quantum dots embedded in AlGaAs/GaAs heterojunction
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Journal Articles

Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage

W. Chikhaoui, J.-M. Bluet, M.-A. Poisson, N. Sarazin, C. Dua, C. Bru-Chevallier
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 072107 (2010)
https://doi.org/10.1063/1.3326079
Published: February 2010
View article titled, Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
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Journal Articles

Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO 3 ( 001 )

J. Cheng, T. Aviles, A. El Akra, C. Bru-Chevallier, L. Largeau, G. Patriarche, P. Regreny, A. Benamrouche, Y. Robach, G. Hollinger, G. Saint-Girons
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 232116 (2009)
https://doi.org/10.1063/1.3273850
Published: December 2009
View article titled, Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO 3 ( 001 )
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Journal Articles

Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots

M. Baira, L. Bouzaïene, L. Sfaxi, H. Maaref, O. Marty, C. Bru-Chevallier
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 094322 (2009)
https://doi.org/10.1063/1.3122003
Published: May 2009
View article titled, Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
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Journal Articles

Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule

M. Baira, L. Sfaxi, L. Bouzaiene, H. Maaref, N. Chauvin, C. Bru-Chevallier
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 064314 (2008)
https://doi.org/10.1063/1.2968238
Published: September 2008
View article titled, Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule
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Journal Articles

Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon

V. Lysenko, V. Onyskevych, O. Marty, V. A. Skryshevsky, Y. Chevolot, C. Bru-Chevallier
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 251910 (2008)
https://doi.org/10.1063/1.2948955
Published: June 2008
View article titled, Extraction of ultraviolet emitting silicon species from strongly hydrogenated nanoporous silicon
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Journal Articles

Size and shape effects on excitons and biexcitons in single In As ∕ In P quantum dots

N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, M. Gendry
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 073702 (2006)
https://doi.org/10.1063/1.2353896
Published: October 2006
View article titled, Size and shape effects on excitons and biexcitons in single In As ∕ In P quantum dots
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Journal Articles

Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)

E. Dupuy, P. Regreny, Y. Robach, M. Gendry, N. Chauvin, E. Tranvouez, G. Bremond, C. Bru-Chevallier, G. Patriarche
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 123112 (2006)
https://doi.org/10.1063/1.2354010
Published: September 2006
View article titled, Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001)
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Journal Articles

Microphotoluminescence of exciton and biexciton around 1.5 μ m from a single In As ∕ In P ( 001 ) quantum dot

G. Saint-Girons, N. Chauvin, A. Michon, G. Patriarche, G. Beaudoin, G. Brémond, C. Bru-Chevallier, I. Sagnes
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 133101 (2006)
https://doi.org/10.1063/1.2185008
Published: March 2006
View article titled, Microphotoluminescence of exciton and biexciton around 1.5 μ m from a single In As ∕ In P ( 001 ) quantum dot
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Journal Articles

Photoreflectance study of GaAsSb ∕ InP heterostructures

H. Chouaib, C. Bru-Chevallier, G. Guillot, H. Lahreche, P. Bove
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 123524 (2005)
https://doi.org/10.1063/1.2142099
Published: December 2005
View article titled, Photoreflectance study of GaAsSb ∕ InP heterostructures
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Journal Articles

From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)

M. Gendry, C. Monat, J. Brault, P. Regreny, G. Hollinger, B. Salem, G. Guillot, T. Benyattou, C. Bru-chevallier, G. Bremond, O. Marty
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 4761–4766 (2004)
https://doi.org/10.1063/1.1690101
Published: May 2004
View article titled, From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
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Journal Articles

Growth and optical properties of GaN/AlN quantum wells

C. Adelmann, E. Sarigiannidou, D. Jalabert, Y. Hori, J.-L. Rouvière, B. Daudin, S. Fanget, C. Bru-Chevallier, T. Shibata, M. Tanaka
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 4154–4156 (2003)
https://doi.org/10.1063/1.1581386
Published: June 2003
View article titled, Growth and optical properties of GaN/AlN quantum wells
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Journal Articles

Rapid thermal annealing in GaN x As 1−x / GaAs structures: Effect of nitrogen reorganization on optical properties

L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Ballet, P. Duvaut, G. Rolland, A. Million
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 5902–5908 (2002)
https://doi.org/10.1063/1.1467957
Published: May 2002
View article titled, Rapid thermal annealing in GaN x As 1−x / GaAs structures: Effect of nitrogen reorganization on optical properties
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Journal Articles

Structural properties of undoped and doped cubic GaN grown on SiC(001)

E. Martinez-Guerrero, E. Bellet-Amalric, L. Martinet, G. Feuillet, B. Daudin, H. Mariette, P. Holliger, C. Dubois, C. Bru-Chevallier, P. Aboughe Nze, T. Chassagne, G. Ferro, Y. Monteil
Journal: Journal of Applied Physics
J. Appl. Phys. 91, 4983–4987 (2002)
https://doi.org/10.1063/1.1456243
Published: April 2002
View article titled, Structural properties of undoped and doped cubic GaN grown on SiC(001)
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Journal Articles

Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well

L. Grenouillet, C. Bru-Chevallier, G. Guillot, P. Gilet, P. Duvaut, C. Vannuffel, A. Million, A. Chenevas-Paule
Journal: Applied Physics Letters
Appl. Phys. Lett. 76, 2241–2243 (2000)
https://doi.org/10.1063/1.126308
Published: April 2000
View article titled, Evidence of strong carrier localization below 100 K in a GaInNAs/GaAs single quantum well
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Journal Articles

How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

B. Daudin, G. Feuillet, J. Hübner, Y. Samson, F. Widmann, A. Philippe, C. Bru-Chevallier, G. Guillot, E. Bustarret, G. Bentoumi, A. Deneuville
Journal: Journal of Applied Physics
J. Appl. Phys. 84, 2295–2300 (1998)
https://doi.org/10.1063/1.368296
Published: August 1998
View article titled, How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy
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