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Journal Articles

Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing

N. Chery, M. Zhang, R. Monflier, N. Mallet, G. Seine, V. Paillard, J. M. Poumirol, G. Larrieu, A. S. Royet, S. Kerdilès, P. Acosta-Alba, M. Perego, C. Bonafos, F. Cristiano
Journal: Journal of Applied Physics
J. Appl. Phys. 131, 065301 (2022)
https://doi.org/10.1063/5.0073827
Published: February 2022
View article titled, Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing
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Includes: Supplementary data
Journal Articles

Ag doped silicon nitride nanocomposites for embedded plasmonics

M. Bayle, C. Bonafos, P. Benzo, G. Benassayag, B. Pécassou, L. Khomenkova, F. Gourbilleau, R. Carles
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 101907 (2015)
https://doi.org/10.1063/1.4930940
Published: September 2015
View article titled, Ag doped silicon nitride nanocomposites for embedded plasmonics
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Journal Articles

Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

C. Bonafos, Y. Spiegel, P. Normand, G. Ben-Assayag, J. Groenen, M. Carrada, P. Dimitrakis, E. Kapetanakis, B. S. Sahu, A. Slaoui, F. Torregrosa
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 253118 (2013)
https://doi.org/10.1063/1.4848780
Published: December 2013
View article titled, Controlled fabrication of Si nanocrystal delta-layers in thin SiO<sub>2</sub> layers by plasma immersion ion implantation for nonvolatile memories
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Journal Articles

Kelvin force microscopy characterization of charging effect in thin a-SiOxNy:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment

C. Villeneuve-Faure, K. Makasheva, C. Bonafos, B. Despax, L. Boudou, P. Pons, G. Teyssedre
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 204102 (2013)
https://doi.org/10.1063/1.4805026
Published: May 2013
View article titled, Kelvin force microscopy characterization of charging effect in thin a-SiO<sub>x</sub>N<sub>y</sub>:H layers deposited in pulsed plasma enhanced chemical vapor deposition process by tuning the Silicon-environment
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Journal Articles

GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications

P. Dimitrakis, P. Normand, C. Bonafos, E. Papadomanolaki, E. Iliopoulos
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 053117 (2013)
https://doi.org/10.1063/1.4790439
Published: February 2013
View article titled, GaN quantum-dots integrated in the gate dielectric of metal-oxide-semiconductor structures for charge-storage applications
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Journal Articles

Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications

A. Bastard, J. C. Bastien, B. Hyot, S. Lhostis, F. Mompiou, C. Bonafos, G. Servanton, C. Borowiak, F. Lorut, N. Bicais-Lepinay, A. Toffoli, C. Sandhya, A. Fantini, L. Perniola, E. Gourvest, S. Maitrejean, A. Roule, V. Sousa, D. Bensahel, B. André
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 243103 (2011)
https://doi.org/10.1063/1.3668095
Published: December 2011
View article titled, Crystallization study of “melt quenched” amorphous GeTe by transmission electron microscopy for phase change memory applications
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Journal Articles

Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates

Josep Carreras, J. Arbiol, B. Garrido, C. Bonafos, J. Montserrat
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 091103 (2008)
https://doi.org/10.1063/1.2889499
Published: March 2008
View article titled, Direct modulation of electroluminescence from silicon nanocrystals beyond radiative recombination rates
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Journal Articles

Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich Si O 2 layers

O. Jambois, Josep Carreras, A. Pérez-Rodríguez, B. Garrido, C. Bonafos, S. Schamm, G. Ben Assayag
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 211105 (2007)
https://doi.org/10.1063/1.2807281
Published: November 2007
View article titled, Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich Si O 2 layers
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Journal Articles

Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism

N. A. Cherkashin, A. Claverie, C. Bonafos, V. V. Chaldyshev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, P. Werner
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 023520 (2007)
https://doi.org/10.1063/1.2749303
Published: July 2007
View article titled, Influence of the initial supersaturation of solute atoms on the size of nanoparticles grown by an Ostwald ripening mechanism
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Journal Articles

Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks

V. Ioannou-Sougleridis, P. Dimitrakis, V. Em. Vamvakas, P. Normand, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, M. Perego, M. Fanciulli
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 263513 (2007)
https://doi.org/10.1063/1.2752769
Published: June 2007
View article titled, Wet oxidation of nitride layer implanted with low-energy Si ions for improved oxide-nitride-oxide memory stacks
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Journal Articles

White electroluminescence from C- and Si-rich thin silicon oxides

O. Jambois, B. Garrido, P. Pellegrino, Josep Carreras, A. Pérez-Rodríguez, J. Montserrat, C. Bonafos, G. BenAssayag, S. Schamm
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 253124 (2006)
https://doi.org/10.1063/1.2423244
Published: December 2006
View article titled, White electroluminescence from C- and Si-rich thin silicon oxides
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Journal Articles

Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin Si O 2 layers

H. Coffin, C. Bonafos, S. Schamm, N. Cherkashin, G. Ben Assayag, A. Claverie, M. Respaud, P. Dimitrakis, P. Normand
Journal: Journal of Applied Physics
J. Appl. Phys. 99, 044302 (2006)
https://doi.org/10.1063/1.2171785
Published: February 2006
View article titled, Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin Si O 2 layers
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Journal Articles

Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology

T. Müller, K.-H. Heinig, W. Möller, C. Bonafos, H. Coffin, N. Cherkashin, G. Ben Assayag, S. Schamm, G. Zanchi, A. Claverie, M. Tencé, C. Colliex
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 2373–2375 (2004)
https://doi.org/10.1063/1.1794856
Published: September 2004
View article titled, Multi-dot floating-gates for nonvolatile semiconductor memories: Their ion beam synthesis and morphology
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Journal Articles

Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate

A. Wellner, V. Paillard, H. Coffin, N. Cherkashin, C. Bonafos
Journal: Journal of Applied Physics
J. Appl. Phys. 96, 2403–2405 (2004)
https://doi.org/10.1063/1.1765853
Published: August 2004
View article titled, Resonant Raman scattering of a single layer of Si nanocrystals on a silicon substrate
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Journal Articles

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation

C. Bonafos, M. Carrada, N. Cherkashin, H. Coffin, D. Chassaing, G. Ben Assayag, A. Claverie, T. Müller, K. H. Heinig, M. Perego, M. Fanciulli, P. Dimitrakis, P. Normand
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 5696–5702 (2004)
https://doi.org/10.1063/1.1695594
Published: May 2004
View article titled, Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin SiO 2 layers by low energy ion implantation
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Journal Articles

Detection and characterization of silicon nanocrystals embedded in thin oxide layers

M. Perego, S. Ferrari, M. Fanciulli, G. Ben Assayag, C. Bonafos, M. Carrada, A. Claverie
Journal: Journal of Applied Physics
J. Appl. Phys. 95, 257–262 (2004)
https://doi.org/10.1063/1.1629775
Published: January 2004
View article titled, Detection and characterization of silicon nanocrystals embedded in thin oxide layers
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Journal Articles

Stress measurements of germanium nanocrystals embedded in silicon oxide

A. Wellner, V. Paillard, C. Bonafos, H. Coffin, A. Claverie, B. Schmidt, K. H. Heinig
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 5639–5642 (2003)
https://doi.org/10.1063/1.1617361
Published: November 2003
View article titled, Stress measurements of germanium nanocrystals embedded in silicon oxide
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Journal Articles

Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis

P. Normand, E. Kapetanakis, P. Dimitrakis, D. Tsoukalas, K. Beltsios, N. Cherkashin, C. Bonafos, G. Benassayag, H. Coffin, A. Claverie, V. Soncini, A. Agarwal, M. Ameen
Journal: Applied Physics Letters
Appl. Phys. Lett. 83, 168–170 (2003)
https://doi.org/10.1063/1.1588378
Published: July 2003
View article titled, Effect of annealing environment on the memory properties of thin oxides with embedded Si nanocrystals obtained by low-energy ion-beam synthesis
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Journal Articles

White luminescence from Si + and C + ion-implanted SiO 2 films

A. Pérez-Rodrı́guez, O. González-Varona, B. Garrido, P. Pellegrino, J. R. Morante, C. Bonafos, M. Carrada, A. Claverie
Journal: Journal of Applied Physics
J. Appl. Phys. 94, 254–262 (2003)
https://doi.org/10.1063/1.1578172
Published: July 2003
View article titled, White luminescence from Si + and C + ion-implanted SiO 2 films
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Journal Articles

Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories

G. Ben Assayag, C. Bonafos, M. Carrada, A. Claverie, P. Normand, D. Tsoukalas
Journal: Applied Physics Letters
Appl. Phys. Lett. 82, 200–202 (2003)
https://doi.org/10.1063/1.1536026
Published: January 2003
View article titled, Transmission electron microscopy measurements of the injection distances in nanocrystal-based memories
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