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Journal Articles

Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

A. Zaslavsky, C. A. Richter, P. R. Shrestha, B. D. Hoskins, S. T. Le, A. Madhavan, J. J. McClelland

Appl. Phys. Lett. 119, 043501 (2021)

https://doi.org/10.1063/5.0060343

Published: July 2021

View articletitled, Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

Journal Articles

Use of quantum effects as potential qualifying metrics for “quantum grade silicon”

A. N. Ramanayaka, Ke Tang, J. A. Hagmann, Hyun-Soo Kim, D. S. Simons, C. A. Richter, J. M. Pomeroy

AIP Advances 9, 125153 (2019)

https://doi.org/10.1063/1.5128098

Published: December 2019

View articletitled, Use of quantum effects as potential qualifying metrics for “quantum grade silicon”

Journal Articles

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

A. N. Ramanayaka, Hyun-Soo Kim, J. A. Hagmann, R. E. Murray, Ke Tang, F. Meisenkothen, H. R. Zhang, L. A. Bendersky, A. V. Davydov, Neil M. Zimmerman, C. A. Richter, J. M. Pomeroy

AIP Advances 8, 075329 (2018)

https://doi.org/10.1063/1.5045338

Published: July 2018

View articletitled, Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Journal Articles

A unique photoemission method to measure semiconductor heterojunction band offsets

Q. Zhang, R. Li, R. Yan, T. Kosel, H. G. Xing, A. C. Seabaugh, K. Xu, O. A. Kirillov, D. J. Gundlach, C. A. Richter, N. V. Nguyen

Appl. Phys. Lett. 102, 012101 (2013)

https://doi.org/10.1063/1.4772979

Published: January 2013

View articletitled, A unique photoemission method to measure semiconductor heterojunction band offsets

Journal Articles

Flip chip lamination to electrically contact organic single crystals on flexible substrates

M. Coll, K. P. Goetz, B. R. Conrad, C. A. Hacker, D. J. Gundlach, C. A. Richter, O. D. Jurchescu

Appl. Phys. Lett. 98, 163302 (2011)

https://doi.org/10.1063/1.3580610

Published: April 2011

View articletitled, Flip chip lamination to electrically contact organic single crystals on flexible substrates

Journal Articles

Thermal stability of confined flip-chip laminated ω -functionalized monolayers

M. Coll, C. A. Richter, C. A. Hacker

J. Vac. Sci. Technol. B 27, 2826–2831 (2009)

https://doi.org/10.1116/1.3259934

Published: December 2009

View articletitled, Thermal stability of confined flip-chip laminated ω -functionalized monolayers

Journal Articles

Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis

B. H. Hamadani, C. A. Richter, J. S. Suehle, D. J. Gundlach

Appl. Phys. Lett. 92, 203303 (2008)

https://doi.org/10.1063/1.2917523

Published: May 2008

View articletitled, Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis

Journal Articles

The Characterization of Silicon‐Based Molecular Devices

N. Gergel‐Hackett, C. A. Hacker, L. J. Richter, O. A. Kirillov, C. A. Richter

AIP Conf. Proc. 931, 467–471 (2007)

https://doi.org/10.1063/1.2799419

Published: September 2007

View articletitled, The Characterization of Silicon‐Based Molecular Devices

Journal Articles

Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

B. H. Hamadani, C. A. Richter, D. J. Gundlach, R. J. Kline, I. McCulloch, M. Heeney

J. Appl. Phys. 102, 044503 (2007)

https://doi.org/10.1063/1.2769782

Published: August 2007

View articletitled, Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

Journal Articles

Spectroscopic ellipsometry characterization of high-k dielectric HfO 2 thin films and the high-temperature annealing effects on their optical properties

Yong Jai Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein, Byoung Hun Lee, Jack C. Lee

Appl. Phys. Lett. 80, 1249–1251 (2002)

https://doi.org/10.1063/1.1448384

Published: February 2002

View articletitled, Spectroscopic ellipsometry characterization of high-k dielectric HfO 2 thin films and the high-temperature annealing effects on their optical properties

Journal Articles

Optical and electrical thickness measurements of alternate gate dielectrics: A fundamental difference

C. A. Richter, N. V. Nguyen, E. P. Gusev, T. H. Zabel, G. B. Alers

AIP Conf. Proc. 550, 134–139 (2001)

https://doi.org/10.1063/1.1354385

Published: January 2001

View articletitled, Optical and electrical thickness measurements of alternate gate dielectrics: A fundamental difference

Journal Articles

Effects of high-temperature annealing on the dielectric function of Ta 2 O 5 films observed by spectroscopic ellipsometry

N. V. Nguyen, C. A. Richter, Yong Jai Cho, G. B. Alers, L. A. Stirling

Appl. Phys. Lett. 77, 3012–3014 (2000)

https://doi.org/10.1063/1.1324730

Published: November 2000

View articletitled, Effects of high-temperature annealing on the dielectric function of Ta 2 O 5 films observed by spectroscopic ellipsometry

Journal Articles

Characterization of thin SiO 2 on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

C. A. Richter, N. V. Nguyen, J. A. Dura, C. F. Majkrzak

AIP Conf. Proc. 449, 185–189 (1998)

https://doi.org/10.1063/1.56796

Published: November 1998

View articletitled, Characterization of thin SiO 2 on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

Journal Articles

Neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry characterization of thin SiO 2 on Si

J. A. Dura, C. A. Richter, C. F. Majkrzak, N. V. Nguyen

Appl. Phys. Lett. 73, 2131–2133 (1998)

https://doi.org/10.1063/1.122442

Published: October 1998

View articletitled, Neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry characterization of thin SiO 2 on Si

Journal Articles

X‐ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

J. A. Dura, J. G. Pellegrino, C. A. Richter

Appl. Phys. Lett. 69, 1134–1136 (1996)

https://doi.org/10.1063/1.117082

Published: August 1996

View articletitled, X‐ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

Journal Articles

Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al_0.33Ga_0.67As/GaAs superlattice system

J. G. Pellegrino, C. A. Richter, J. A. Dura, P. M. Amirtharaj, S. B. Qadri, B. Roughani

J. Vac. Sci. Technol. A 13, 787–791 (1995)

https://doi.org/10.1116/1.579828

Published: May 1995

View articletitled, Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al0.33Ga0.67As/GaAs superlattice system

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Impact ionization-induced bistability in CMOS transistors at cryogenic temperatures for capacitorless memory applications

Use of quantum effects as potential qualifying metrics for “quantum grade silicon”

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

A unique photoemission method to measure semiconductor heterojunction band offsets

Flip chip lamination to electrically contact organic single crystals on flexible substrates

Thermal stability of confined flip-chip laminated ω -functionalized monolayers

Insights into the characterization of polymer-based organic thin-film transistors using capacitance-voltage analysis

The Characterization of Silicon‐Based Molecular Devices

Influence of source-drain electric field on mobility and charge transport in organic field-effect transistors

Spectroscopic ellipsometry characterization of high-k dielectric HfO 2 thin films and the high-temperature annealing effects on their optical properties

Optical and electrical thickness measurements of alternate gate dielectrics: A fundamental difference

Effects of high-temperature annealing on the dielectric function of Ta 2 O 5 films observed by spectroscopic ellipsometry

Characterization of thin SiO 2 on Si by spectroscopic ellipsometry, neutron reflectometry, and x-ray reflectometry

Neutron reflectometry, x-ray reflectometry, and spectroscopic ellipsometry characterization of thin SiO 2 on Si

X‐ray reflectivity determination of interface roughness correlated with transport properties of (AlGa)As/GaAs high electron mobility transistor devices

Buffer layer–modulation‐doped field‐effect‐transistor interactions in the Al_0.33Ga_0.67As/GaAs superlattice system

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