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Journal Articles

Theoretical investigation of nitrogen-vacancy defects in silicon

Open Access
M. S. Potsidi, N. Kuganathan, S.-R. G. Christopoulos, N. V. Sarlis, A. Chroneos, C. A. Londos
Journal: AIP Advances
AIP Advances 12, 025112 (2022)
https://doi.org/10.1063/5.0075799
Published: February 2022
View articletitled, Theoretical investigation of nitrogen-vacancy defects in silicon
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Includes: Supplementary data
Journal Articles

Experimental and theoretical study of the C4 defect in neutron irradiated silicon

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C. A. Londos, D. N. Aliprantis, G. Antonaras, M. S. Potsidi, T. Angeletos
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 145702 (2018)
https://doi.org/10.1063/1.5024932
Published: April 2018
View articletitled, Experimental and theoretical study of the C4 defect in neutron irradiated silicon
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Journal Articles

Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals

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T. Angeletos, A. Chroneos, C. A. Londos
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 125704 (2016)
https://doi.org/10.1063/1.4945110
Published: March 2016
View articletitled, Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals
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Journal Articles

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

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G. Brenet, D. Timerkaeva, E. N. Sgourou, C. A. Londos, D. Caliste, P. Pochet
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 125706 (2015)
https://doi.org/10.1063/1.4931569
Published: September 2015
View articletitled, An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon
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Journal Articles

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

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T. Angeletos, E. N. Sgourou, A. Andrianakis, A. Diamantopoulou, A. Chroneos, C. A. Londos
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 015704 (2015)
https://doi.org/10.1063/1.4923388
Published: July 2015
View articletitled, Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin
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Journal Articles

Oxygen defect processes in silicon and silicon germanium

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A. Chroneos, E. N. Sgourou, C. A. Londos, U. Schwingenschlögl
Journal: Applied Physics Reviews
Appl. Phys. Rev. 2, 021306 (2015)
https://doi.org/10.1063/1.4922251
Published: June 2015
View articletitled, Oxygen defect processes in silicon and silicon germanium
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Journal Articles

Vacancy-oxygen defects in p-type Si1−xGex

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E. N. Sgourou, C. A. Londos, A. Chroneos
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 133502 (2014)
https://doi.org/10.1063/1.4896728
Published: October 2014
View articletitled, Vacancy-oxygen defects in p-type Si1−xGex
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Journal Articles

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

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H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou, U. Schwingenschlögl
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 183509 (2014)
https://doi.org/10.1063/1.4875658
Published: May 2014
View articletitled, G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach
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Journal Articles

Di-interstitial defect in silicon revisited

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C. A. Londos, G. Antonaras, A. Chroneos
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 193513 (2013)
https://doi.org/10.1063/1.4831963
Published: November 2013
View articletitled, Di-interstitial defect in silicon revisited
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Journal Articles

Impact of isovalent doping on radiation defects in silicon

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C. A. Londos, E. N. Sgourou, D. Timerkaeva, A. Chroneos, P. Pochet, V. V. Emtsev
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 113504 (2013)
https://doi.org/10.1063/1.4821116
Published: September 2013
View articletitled, Impact of isovalent doping on radiation defects in silicon
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Journal Articles

A-centers in silicon studied with hybrid density functional theory

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H. Wang, A. Chroneos, C. A. Londos, E. N. Sgourou, U. Schwingenschlögl
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 052101 (2013)
https://doi.org/10.1063/1.4817012
Published: July 2013
View articletitled, A-centers in silicon studied with hybrid density functional theory
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Journal Articles

Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon

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C. A. Londos, G. Antonaras, A. Chroneos
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 043502 (2013)
https://doi.org/10.1063/1.4816101
Published: July 2013
View articletitled, Localised vibrational mode spectroscopy studies of self-interstitial clusters in neutron irradiated silicon
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Journal Articles

Erratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113 , 113506 (2013)]

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E. N. Sgourou, D. Timerkaeva, C. A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, P. Pochet
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 239901 (2013)
https://doi.org/10.1063/1.4811367
Published: June 2013
View articletitled, Erratum “Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si” [J. Appl. Phys. 113 , 113506 (2013)]
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Journal Articles

Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si

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E. N. Sgourou, D. Timerkaeva, C. A. Londos, D. Aliprantis, A. Chroneos, D. Caliste, P. Pochet
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 113506 (2013)
https://doi.org/10.1063/1.4795510
Published: March 2013
View articletitled, Impact of isovalent doping on the trapping of vacancy and interstitial related defects in Si
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Journal Articles

Production and evolution of A-centers in n-type Si1−xGex

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E. N. Sgourou, A. Andrianakis, C. A. Londos, A. Chroneos
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 113507 (2013)
https://doi.org/10.1063/1.4795812
Published: March 2013
View articletitled, Production and evolution of A-centers in n-type Si1−xGex
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Journal Articles

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

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C. A. Londos, E. N. Sgourou, A. Chroneos
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123517 (2012)
https://doi.org/10.1063/1.4770488
Published: December 2012
View articletitled, Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective
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Journal Articles

Interaction of n-type dopants with oxygen in silicon and germanium

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A. Chroneos, E. N. Sgourou, C. A. Londos
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 073706 (2012)
https://doi.org/10.1063/1.4757406
Published: October 2012
View articletitled, Interaction of n-type dopants with oxygen in silicon and germanium
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Journal Articles

Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

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C. A. Londos, D. Aliprantis, E. N. Sgourou, A. Chroneos, P. Pochet
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 123508 (2012)
https://doi.org/10.1063/1.4729573
Published: June 2012
View articletitled, Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon
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Journal Articles

The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon

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V. V. Voronkov, R. Falster, C. A. Londos
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 113530 (2012)
https://doi.org/10.1063/1.4729323
Published: June 2012
View articletitled, The annealing mechanism of the radiation-induced vacancy-oxygen defect in silicon
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Journal Articles

Point defect engineering strategies to suppress A-center formation in silicon

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A. Chroneos, C. A. Londos, E. N. Sgourou, P. Pochet
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 241901 (2011)
https://doi.org/10.1063/1.3666226
Published: December 2011
View articletitled, Point defect engineering strategies to suppress A-center formation in silicon
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Includes: Supplementary data