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Journal Articles

Coherent transport description of the dual-wavelength ambipolar terahertz quantum cascade laser

G. Beji, Z. Ikonić, C. A. Evans, D. Indjin, P. Harrison
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013111 (2011)
https://doi.org/10.1063/1.3530628
Published: January 2011
View article titled, Coherent transport description of the dual-wavelength ambipolar terahertz quantum cascade laser
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Journal Articles

The importance of electron temperature in silicon-based terahertz quantum cascade lasers

L. Lever, A. Valavanis, C. A. Evans, Z. Ikonić, R. W. Kelsall
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 131103 (2009)
https://doi.org/10.1063/1.3237177
Published: September 2009
View article titled, The importance of electron temperature in silicon-based terahertz quantum cascade lasers
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Journal Articles

Comparison of SiO 2 , Si 3 N 4 , As 2 S 3 , and Ge 0.25 Se 0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

G. Rehouma, C. A. Evans, Z. Ikonić, D. Indjin, P. Harrison
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 053104 (2009)
https://doi.org/10.1063/1.3197858
Published: September 2009
View article titled, Comparison of SiO 2 , Si 3 N 4 , As 2 S 3 , and Ge 0.25 Se 0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides
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Journal Articles

Wide wavelength tuning of Ga As ∕ Al x Ga 1 − x As bound-to-continuum quantum cascade lasers by aluminum content control

J. Heinrich, R. Langhans, M. S. Vitiello, G. Scamarcio, D. Indjin, C. A. Evans, Z. Ikonić, P. Harrison, S. Höfling, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 141111 (2008)
https://doi.org/10.1063/1.2907503
Published: April 2008
View article titled, Wide wavelength tuning of Ga As ∕ Al x Ga 1 − x As bound-to-continuum quantum cascade lasers by aluminum content control
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Journal Articles

Design and simulation of In Ga As ∕ Al As Sb quantum-cascade lasers for short wavelength emission

C. A. Evans, V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 141109 (2005)
https://doi.org/10.1063/1.2067701
Published: September 2005
View article titled, Design and simulation of In Ga As ∕ Al As Sb quantum-cascade lasers for short wavelength emission
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Journal Articles

Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs

R. G. Wilson, C. A. Evans, Jr., J. C Norberg, C. G. Hopkins, Y. S. Park
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 6868–6874 (1983)
https://doi.org/10.1063/1.331991
Published: December 1983
View article titled, Redistribution of chromium under annealed sulfur implants into chromium‐doped GaAs
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Journal Articles

Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination

R. G. Wilson, D. K. Sadana, T. W. Sigmon, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 43, 549–551 (1983)
https://doi.org/10.1063/1.94415
Published: September 1983
View article titled, Correlation among secondary ion mass spectrometry, cross‐section transmission electron microscopy, and Rutherford backscattering analyses for defect density and depth distribution determination
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Journal Articles

Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation

R. G. Wilson, D. M. Jamba, V. R. Deline, C. A. Evans, Jr., Y. S. Park
Journal: Journal of Applied Physics
J. Appl. Phys. 54, 3849–3854 (1983)
https://doi.org/10.1063/1.332609
Published: July 1983
View article titled, Depth distributions of sulfur implanted into GaAs as a function of ion energy, ion fluence, and annealing temperature and encapsulation
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Journal Articles

Manganese and germanium redistribution in In0.53Ga0.47 As grown by molecular beam epitaxy

E. Silberg, T. Y. Chang, E. A. Caridi, C. A. Evans, Jr., C. J. Hitzman
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 1, 178–181 (1983)
https://doi.org/10.1116/1.582528
Published: April 1983
View article titled, Manganese and germanium redistribution in In<sub>0.53</sub>Ga<sub>0.47</sub> As grown by molecular beam epitaxy
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Journal Articles

Si incorporation in AlxGa1−xAs grown by molecular beam epitaxy

T. J. Drummond, W. G. Lyons, R. Fischer, R. E. Thorne, H. Morkoç, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Vacuum Science and Technology
J. Vac. Sci. Technol. 21, 957–960 (1982)
https://doi.org/10.1116/1.571873
Published: November 1982
View article titled, Si incorporation in Al<sub><em>x</em></sub>Ga<sub>1−<em>x</em></sub>As grown by molecular beam epitaxy
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Journal Articles

Manganese incorporation behavior in molecular beam epitaxial gallium arsenide

D. DeSimone, C. E. C. Wood, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 53, 4938–4942 (1982)
https://doi.org/10.1063/1.331328
Published: July 1982
View article titled, Manganese incorporation behavior in molecular beam epitaxial gallium arsenide
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Journal Articles

Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing

T. J. Magee, H. Kawayoshi, R. D. Ormond, L. A. Christel, J. F. Gibbons, C. G. Hopkins, C. A. Evans, Jr., D. S. Day
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 906–908 (1981)
https://doi.org/10.1063/1.92602
Published: December 1981
View article titled, Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing
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Journal Articles

The role of stabilized back‐surface damage in controlling internal SiOx nucleation and denudation zones in Si

T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 631–633 (1981)
https://doi.org/10.1063/1.92829
Published: October 1981
View article titled, The role of stabilized back‐surface damage in controlling internal SiO<sub><em>x</em></sub> nucleation and denudation zones in Si
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Journal Articles

Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si

T. J. Magee, C. Leung, H. Kawayoshi, L. J. Palkuti, B. K. Furman, C. A. Evans, Jr., L. A. Christel, J. F. Gibbons, D. S. Day
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 564–566 (1981)
https://doi.org/10.1063/1.92795
Published: October 1981
View article titled, Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si
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Journal Articles

Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si

T. J. Magee, C. Leung, H. Kawayoshi, R. Ormond, B. K. Furman, C. A. Evans, Jr., D. S. Day
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 413–415 (1981)
https://doi.org/10.1063/1.92756
Published: September 1981
View article titled, Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si
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Journal Articles

Low‐temperature redistribution and gettering of oxygen in silicon

T. J. Magee, C. Leung, H. Kawayoshi, B. Furman, C. G. Hopkins, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 52, 5392–5394 (1981)
https://doi.org/10.1063/1.329403
Published: August 1981
View article titled, Low‐temperature redistribution and gettering of oxygen in silicon
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Journal Articles

Redistribution of oxygen within damage regions of boron‐implanted silicon

T. J. Magee, C. Leung, H. Kawayoshi, B. Furman, C. A. Evans, Jr., D. S. Day
Journal: Applied Physics Letters
Appl. Phys. Lett. 39, 260–262 (1981)
https://doi.org/10.1063/1.92665
Published: August 1981
View article titled, Redistribution of oxygen within damage regions of boron‐implanted silicon
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Journal Articles

Deuterium at the Si‐SiO2 interface detected by secondary‐ion mass spectrometry

N. M. Johnson, D. K. Biegelsen, M. D. Moyer, V. R. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 38, 995–997 (1981)
https://doi.org/10.1063/1.92225
Published: June 1981
View article titled, Deuterium at the Si‐SiO<sub>2</sub> interface detected by secondary‐ion mass spectrometry
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Journal Articles

Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si

T. J. Magee, C. Leung, H. Kawayoshi, B. K. Furman, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 38, 891–893 (1981)
https://doi.org/10.1063/1.92218
Published: June 1981
View article titled, Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si
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Journal Articles

Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs

T. J. Magee, R. D. Ormond, C. A. Evans, Jr., R. J. Blattner, R. M. Malbon, D. S. Day, R. Sankaran
Journal: Applied Physics Letters
Appl. Phys. Lett. 38, 559–561 (1981)
https://doi.org/10.1063/1.92412
Published: April 1981
View article titled, Front surface control of Cr redistribution and formation of stable Cr depletion channels in GaAs
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