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Journal Articles

Coherent transport description of the dual-wavelength ambipolar terahertz quantum cascade laser

G. Beji, Z. Ikonić, C. A. Evans, D. Indjin, P. Harrison
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 013111 (2011)
https://doi.org/10.1063/1.3530628
Published: January 2011
View article titled, Coherent transport description of the dual-wavelength ambipolar terahertz quantum cascade laser
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Journal Articles

The importance of electron temperature in silicon-based terahertz quantum cascade lasers

L. Lever, A. Valavanis, C. A. Evans, Z. Ikonić, R. W. Kelsall
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 131103 (2009)
https://doi.org/10.1063/1.3237177
Published: September 2009
View article titled, The importance of electron temperature in silicon-based terahertz quantum cascade lasers
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Journal Articles

Comparison of SiO 2 , Si 3 N 4 , As 2 S 3 , and Ge 0.25 Se 0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

G. Rehouma, C. A. Evans, Z. Ikonić, D. Indjin, P. Harrison
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 053104 (2009)
https://doi.org/10.1063/1.3197858
Published: September 2009
View article titled, Comparison of SiO 2 , Si 3 N 4 , As 2 S 3 , and Ge 0.25 Se 0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides
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Journal Articles

Interaction of Al layers with polycrystalline Si

K. Nakamura, M‐A. Nicolet, J. W. Mayer, R. J. Blattner, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 46, 4678–4684 (1975)
https://doi.org/10.1063/1.321530
Published: September 2008
View article titled, Interaction of Al layers with polycrystalline Si
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Journal Articles

Antimony doping of Si layers grown by solid‐phase epitaxy

S. S. Lau, C. Canali, Z. L. Liau, K. Nakamura, M.‐A. Nicolet, J. W. Mayer, Richard J. Blattner, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 28, 148–150 (1976)
https://doi.org/10.1063/1.88670
Published: August 2008
View article titled, Antimony doping of Si layers grown by solid‐phase epitaxy
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Journal Articles

Solid‐phase crystallization of Si films in contact with Al layers

J. M. Harris, R. J. Blattner, I. D. Ward, C. A. Evans, Jr., H. L. Fraser, M. A. Nicolet, C. L. Ramiller
Journal: Journal of Applied Physics
J. Appl. Phys. 48, 2897–2904 (1977)
https://doi.org/10.1063/1.324100
Published: August 2008
View article titled, Solid‐phase crystallization of Si films in contact with Al layers
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Journal Articles

Pt2Si and PtSi formation with high‐purity Pt thin films

C. Canali, C. Catellani, M. Prudenziati, W. H. Wadlin, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 31, 43–45 (1977)
https://doi.org/10.1063/1.89473
Published: August 2008
View article titled, Pt<sub>2</sub>Si and PtSi formation with high‐purity Pt thin films
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Journal Articles

Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 32, 15–17 (1978)
https://doi.org/10.1063/1.89829
Published: August 2008
View article titled, Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry
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Journal Articles

Anomalous migration of fluorine and electrical activation of boron in BF+2‐implanted silicon

M. Y. Tsai, B. G. Streetman, P. Williams, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 32, 144–147 (1978)
https://doi.org/10.1063/1.89961
Published: August 2008
View article titled, Anomalous migration of fluorine and electrical activation of boron in BF<sup>+</sup><sub>2</sub>‐implanted silicon
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Journal Articles

Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 32, 149–151 (1978)
https://doi.org/10.1063/1.89963
Published: August 2008
View article titled, Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry
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Journal Articles

Use of a scanning cw Kr laser to obtain diffusion‐free annealing of B‐implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, P. Williams, V. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 33, 389–391 (1978)
https://doi.org/10.1063/1.90386
Published: August 2008
View article titled, Use of a scanning cw Kr laser to obtain diffusion‐free annealing of B‐implanted silicon
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Journal Articles

Physical and electrical properties of laser‐annealed ion‐implanted silicon

A. Gat, J. F. Gibbons, T. J. Magee, J. Peng, V. R. Deline, P. Williams, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 32, 276–278 (1978)
https://doi.org/10.1063/1.90046
Published: August 2008
View article titled, Physical and electrical properties of laser‐annealed ion‐implanted silicon
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Journal Articles

Mechanism of the SIMS matrix effect

V. R. Deline, William Katz, C. A. Evans, Jr., Peter Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 33, 832–835 (1978)
https://doi.org/10.1063/1.90546
Published: August 2008
View article titled, Mechanism of the SIMS matrix effect
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Journal Articles

A unified explanation for secondary ion yields

V. R. Deline, C. A. Evans, Jr., Peter Williams
Journal: Applied Physics Letters
Appl. Phys. Lett. 33, 578–580 (1978)
https://doi.org/10.1063/1.90466
Published: August 2008
View article titled, A unified explanation for secondary ion yields
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Journal Articles

Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry

A. Lidow, J. F. Gibbons, V. R. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 32, 572–573 (1978)
https://doi.org/10.1063/1.90134
Published: August 2008
View article titled, Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry
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Journal Articles

Alloying of Au layers and redistribution of Cr in GaAs

T. J. Magee, J. Peng, J. D. Hong, V. R. Deline, C. A. Evans, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 35, 615–617 (1979)
https://doi.org/10.1063/1.91227
Published: August 2008
View article titled, Alloying of Au layers and redistribution of Cr in GaAs
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Journal Articles

Back surface gettering and Cr out‐diffusion in VPE GaAs layers

T. J. Magee, J. Peng, J. D. Hong, C. A. Evans, Jr., V. R. Deline, R. M. Malbon
Journal: Applied Physics Letters
Appl. Phys. Lett. 35, 277–279 (1979)
https://doi.org/10.1063/1.91070
Published: August 2008
View article titled, Back surface gettering and Cr out‐diffusion in VPE GaAs layers
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Journal Articles

Redistribution of Cr during annealing of 80Se‐implanted GaAs

C. A. Evans, Jr., V. R. Deline, T. W. Sigmon, A. Lidow
Journal: Applied Physics Letters
Appl. Phys. Lett. 35, 291–293 (1979)
https://doi.org/10.1063/1.91075
Published: August 2008
View article titled, Redistribution of Cr during annealing of <sup>80</sup>Se‐implanted GaAs
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Journal Articles

Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2‐implanted silicon

M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 50, 188–192 (1979)
https://doi.org/10.1063/1.325689
Published: July 2008
View article titled, Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF<sup>+</sup><sub>2</sub>‐implanted silicon
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Journal Articles

Amorphous‐crystalline transition of arsenic‐implanted silicon caused by multiple‐pulsed ruby laser

J. F. Gibbons, J. L. Regolini, A. Lietoila, T. W. Sigmon, T. J. Magee, J. Peng, J. D. Hong, W. Katz, C. A. Evans, Jr.
Journal: Journal of Applied Physics
J. Appl. Phys. 50, 4388–4390 (1979)
https://doi.org/10.1063/1.326426
Published: July 2008
View article titled, Amorphous‐crystalline transition of arsenic‐implanted silicon caused by multiple‐pulsed ruby laser
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