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Byung-Gook Park
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Journal Articles

Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack

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Kyung Kyu Min, Seok Jin Kwon, Yeonwoo Kim, Junsu Yu, Jong-Ho Lee, Byung-Gook Park, Daewoong Kwon
Journal: Applied Physics Letters
Appl. Phys. Lett. 120, 012901 (2022)
https://doi.org/10.1063/5.0077840
Published: January 2022
View articletitled, Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack
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Journal Articles

Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM

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Sungjoon Kim, Tae-Hyeon Kim, Hyungjin Kim, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 202106 (2020)
https://doi.org/10.1063/5.0027757
Published: November 2020
View articletitled, Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM
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Journal Articles

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

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Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, Hyungjin Kim
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 152103 (2020)
https://doi.org/10.1063/5.0021626
Published: October 2020
View articletitled, Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
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Journal Articles

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

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Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 182102 (2019)
https://doi.org/10.1063/1.5085853
Published: May 2019
View articletitled, SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory
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Includes: Supplementary data
Journal Articles

Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation

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Min-Woo Kwon, Myung-Hyun Baek, Sungmin Hwang, Kyungchul Park, Tejin Jang, Taehyung Kim, Junil Lee, Seongjae Cho, Byung-Gook Park
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 152107 (2018)
https://doi.org/10.1063/1.5031929
Published: September 2018
View articletitled, Integrate-and-fire neuron circuit using positive feedback field effect transistor for low power operation
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Journal Articles

Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

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Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 36, 051203 (2018)
https://doi.org/10.1116/1.5034058
Published: August 2018
View articletitled, Concurrent events of memory and threshold switching in Ag/SiNx/Si devices
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Journal Articles

Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

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Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 033509 (2017)
https://doi.org/10.1063/1.4985268
Published: July 2017
View articletitled, Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x
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Includes: Supplementary data
Journal Articles

GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency

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Garam Kim, Min-Chul Sun, Jang Hyun Kim, Euyhwan Park, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 021115 (2017)
https://doi.org/10.1063/1.4973995
Published: January 2017
View articletitled, GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
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Journal Articles

Elimination of the gate and drain bias stresses in I–V characteristics of WSe2 FETs by using dual channel pulse measurement

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Jun-Mo Park, In-Tak Cho, Won-Mook Kang, Byung-Gook Park, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 053503 (2016)
https://doi.org/10.1063/1.4960459
Published: August 2016
View articletitled, Elimination of the gate and drain bias stresses in I–V characteristics of WSe2 FETs by using dual channel pulse measurement
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Journal Articles

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

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Sungjun Kim, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 212103 (2016)
https://doi.org/10.1063/1.4952719
Published: May 2016
View articletitled, Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures
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Journal Articles

Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer

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Sungjun Kim, Seongjae Cho, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 34, 022204 (2016)
https://doi.org/10.1116/1.4943560
Published: March 2016
View articletitled, Improved resistive switching properties in SiOx-based resistive random-access memory cell with Ti buffer layer
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Journal Articles

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

Open Access
Sungjun Kim, Seongjae Cho, Byung-Gook Park
Journal: AIP Advances
AIP Advances 6, 015021 (2016)
https://doi.org/10.1063/1.4941364
Published: January 2016
View articletitled, Fully Si compatible SiN resistive switching memory with large self-rectification ratio
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Journal Articles

Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure

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Sungjun Kim, Seongjae Cho, Kyung-Chang Ryoo, Byung-Gook Park
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 062201 (2015)
https://doi.org/10.1116/1.4931946
Published: September 2015
View articletitled, Effects of conducting defects on resistive switching characteristics of SiNx-based resistive random-access memory with MIS structure
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Journal Articles

Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

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Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 212106 (2015)
https://doi.org/10.1063/1.4921926
Published: May 2015
View articletitled, Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications
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Journal Articles

Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

Open Access
Seongjae Cho, In Man Kang, Kyung Rok Kim, Byung-Gook Park, James S. Harris, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 222102 (2013)
https://doi.org/10.1063/1.4833295
Published: November 2013
View articletitled, Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application
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Journal Articles

Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

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Jung-Kyu Lee, Sunghun Jung, Jinwon Park, Sung-Woong Chung, Jae Sung Roh, Sung-Joo Hong, Il Hwan Cho, Hyuck-In Kwon, Chan Hyeong Park, Byung-Gook Park, Jong-Ho Lee
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 103506 (2012)
https://doi.org/10.1063/1.4751248
Published: September 2012
View articletitled, Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices
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Journal Articles

Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism

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Seongjae Cho, Jung Hoon Lee, Kyung‐Chang Ryoo, Sunghun Jung, Jong‐Ho Lee, Byung‐Gook Park
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 899–900 (2011)
https://doi.org/10.1063/1.3666666
Published: December 2011
View articletitled, Vertically Stackable Novel One‐Time Programmable Nonvolatile Memory Devices Based on Dielectric Breakdown Mechanism
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Journal Articles

Comparison of Low Frequency Noise Characteristics between Channel and Gate‐Induced Drain Leakage Currents in nMOSFETs

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Ju‐Wan Lee, Hyungcheol Shin, Byung‐Gook Park, Jong‐Ho Lee
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1399, 907–908 (2011)
https://doi.org/10.1063/1.3666670
Published: December 2011
View articletitled, Comparison of Low Frequency Noise Characteristics between Channel and Gate‐Induced Drain Leakage Currents in nMOSFETs
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Journal Articles

Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment

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Hyeri Jang, Jieun Lee, Jung Han Lee, Sungmin Seo, Byung-Gook Park, Dong Myong Kim, Dae Hwan Kim, In-Young Chung
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 252103 (2011)
https://doi.org/10.1063/1.3669409
Published: December 2011
View articletitled, Analysis of hysteresis characteristics of silicon nanowire biosensors in aqueous environment
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Includes: Supplementary data
Journal Articles

Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation

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Seongjae Cho, In Man Kang, Theodore I. Kamins, Byung-Gook Park, James S. Harris, Jr.
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 243505 (2011)
https://doi.org/10.1063/1.3670325
Published: December 2011
View articletitled, Silicon-compatible compound semiconductor tunneling field-effect transistor for high performance and low standby power operation
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