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Brian P. Downey
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Journal Articles

Nucleation control of high crystal quality heteroepitaxial Sc0.4Al0.6N grown by molecular beam epitaxy

Matthew T. Hardy, Andrew C. Lang, Eric N. Jin, Neeraj Nepal, Brian P. Downey, Vikrant J. Gokhale, D. Scott Katzer, Virginia D. Wheeler
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 105301 (2023)
https://doi.org/10.1063/5.0164430
Published: September 2023
View article titled, Nucleation control of high crystal quality heteroepitaxial Sc<sub>0.4</sub>Al<sub>0.6</sub>N grown by molecular beam epitaxy
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Journal Articles

Impact of surface preparation on the epitaxial growth of SrTiO3 on ScAlN/GaN heterostructures

Eric N. Jin, Andrew C. Lang, Brian P. Downey, Vikrant J. Gokhale, Matthew T. Hardy, Neeraj Nepal, D. Scott Katzer, Virginia D. Wheeler
Journal: Journal of Applied Physics
J. Appl. Phys. 134, 025303 (2023)
https://doi.org/10.1063/5.0152694
Published: July 2023
View article titled, Impact of surface preparation on the epitaxial growth of SrTiO<sub>3</sub> on ScAlN/GaN heterostructures
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Includes: Supplementary data
Journal Articles

Structural characterization of epitaxial γ-Ta2N thin films and AlN/γ-Ta2N heterostructures on SiC substrates

Neeraj Nepal, D. Scott Katzer, Andrew C. Lang, Brian P. Downey, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 41, 042706 (2023)
https://doi.org/10.1116/6.0002530
Published: June 2023
View article titled, Structural characterization of epitaxial γ-Ta<sub>2</sub>N thin films and AlN/γ-Ta<sub>2</sub>N heterostructures on SiC substrates
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Journal Articles

Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy

Diego Vaca, Matthew Barry, Luke Yates, Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia Wheeler, Luke Nyakiti, David J. Meyer, Samuel Graham, Satish Kumar
Journal: Applied Physics Letters
Appl. Phys. Lett. 121, 042107 (2022)
https://doi.org/10.1063/5.0098048
Published: July 2022
View article titled, Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
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Includes: Supplementary data
Journal Articles

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Eric N. Jin, Brian P. Downey, Vikrant J. Gokhale, Jason A. Roussos, Matthew T. Hardy, Tyler A. Growden, Neeraj Nepal, D. Scott Katzer, Jeffrey P. Calame, David J. Meyer
Journal: APL Materials
APL Mater. 9, 111101 (2021)
https://doi.org/10.1063/5.0063295
Published: November 2021
View article titled, Electrical properties of high permittivity epitaxial SrCaTiO<sub>3</sub> grown on AlGaN/GaN heterostructures
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Includes: Supplementary data
Journal Articles

Heteroepitaxial growth of β-Ga2O3 films on SiC via molecular beam epitaxy

Neeraj Nepal, D. Scott Katzer, Brian P. Downey, Virginia D. Wheeler, Luke O. Nyakiti, David F. Storm, Matthew T. Hardy, Jaime A. Freitas, Eric N. Jin, Diego Vaca, Luke Yates, Samuel Graham, Satish Kumar, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 063406 (2020)
https://doi.org/10.1116/6.0000452
Published: October 2020
View article titled, Heteroepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub> films on SiC via molecular beam epitaxy
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Journal Articles

Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs

Vikrant J. Gokhale, Brian P. Downey, D. Scott Katzer, David J. Meyer
Journal: Applied Physics Letters
Appl. Phys. Lett. 117, 124003 (2020)
https://doi.org/10.1063/5.0013848
Published: September 2020
View article titled, Temperature evolution of frequency and anharmonic phonon loss for multi-mode epitaxial HBARs
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Includes: Supplementary data
Journal Articles

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger
Journal: AIP Advances
AIP Advances 10, 055307 (2020)
https://doi.org/10.1063/5.0005062
Published: May 2020
View article titled, Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm<sup>2</sup>
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Journal Articles

Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates

Douglas Scott Katzer, Matthew T. Hardy, Neeraj Nepal, Brian P. Downey, Eric N. Jin, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 38, 032204 (2020)
https://doi.org/10.1116/6.0000063
Published: April 2020
View article titled, Growth-induced temperature changes during transition metal nitride epitaxy on transparent SiC substrates
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Journal Articles

Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes

Tyler A. Growden, David F. Storm, Evan M. Cornuelle, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Jason A Roussos, Nicholas Cronk, Laura B. Ruppalt, James G. Champlain, Paul R. Berger, David J. Meyer
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 113501 (2020)
https://doi.org/10.1063/1.5139219
Published: March 2020
View article titled, Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes
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Journal Articles

RF-plasma MBE growth of epitaxial metallic TaNx transition metal nitride films on SiC

D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, Brian P. Downey, David F. Storm, Eric N. Jin, David J. Meyer
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 37, 031211 (2019)
https://doi.org/10.1116/1.5089779
Published: April 2019
View article titled, RF-plasma MBE growth of epitaxial metallic TaN<sub>x</sub> transition metal nitride films on SiC
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Journal Articles

Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering

Neeraj Nepal, Virginia R. Anderson, Scooter D. Johnson, Brian P. Downey, David J. Meyer, Zachary R. Robinson, Jeffrey M. Woodward, Karl F. Ludwig, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 37, 020910 (2019)
https://doi.org/10.1116/1.5063340
Published: January 2019
View article titled, Understanding the effect of nitrogen plasma exposure on plasma assisted atomic layer epitaxy of InN monitored by real time grazing incidence small angle x-ray scattering
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Journal Articles

XeF2 etching of epitaxial Nb2N for lift-off or micromachining of III-N materials and devices

Brian P. Downey, D. Scott Katzer, Neeraj Nepal, Matthew T. Hardy, David J. Meyer
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 05C312 (2017)
https://doi.org/10.1116/1.4994400
Published: July 2017
View article titled, XeF<sub>2</sub> etching of epitaxial Nb<sub>2</sub>N for lift-off or micromachining of III-N materials and devices
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Journal Articles

Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates

Matthew T. Hardy, Brian P. Downey, Neeraj Nepal, David F. Storm, D. Scott Katzer, David J. Meyer
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 162104 (2017)
https://doi.org/10.1063/1.4981807
Published: April 2017
View article titled, Epitaxial ScAlN grown by molecular beam epitaxy on GaN and SiC substrates
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Journal Articles

Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

Neeraj Nepal, Virginia R. Anderson, Scooter D. Johnson, Brian P. Downey, David J. Meyer, Alexander DeMasi, Zachary R. Robinson, Karl F. Ludwig, Charles R. Eddy, Jr.
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 031504 (2017)
https://doi.org/10.1116/1.4978026
Published: March 2017
View article titled, Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods
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Journal Articles

Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors

David A. Deen, Ross A. Miller, Andrei V. Osinsky, Brian P. Downey, David F. Storm, David J. Meyer, D. Scott Katzer, Neeraj Nepal
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 235704 (2016)
https://doi.org/10.1063/1.4972225
Published: December 2016
View article titled, Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
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Journal Articles

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Matthew T. Hardy, Thomas O. McConkie, David J. Smith, David F. Storm, Brian P. Downey, D. Scott Katzer, David J. Meyer, Neeraj Nepal
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 34, 021512 (2016)
https://doi.org/10.1116/1.4940759
Published: January 2016
View article titled, Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy
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Journal Articles

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Matthew T. Hardy, David F. Storm, Brian P. Downey, D. Scott Katzer, David J. Meyer, Thomas O. McConkie, David J. Smith
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 33, 061207 (2015)
https://doi.org/10.1116/1.4935130
Published: November 2015
View article titled, Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy
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Journal Articles

Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices

Lin Zhou, Michael R. Johnson, David J. Smith, David J. Meyer, David F. Storm, Douglas Scott Katzer, Brian P. Downey
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 32, 011201 (2014)
https://doi.org/10.1116/1.4829878
Published: November 2013
View article titled, Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices
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Journal Articles

Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures

Michael Abraham, Xiaojun Weng, Won Hyuck Choi, Brian P. Downey, Suzanne E. Mohney
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 243504 (2012)
https://doi.org/10.1063/1.4770365
Published: December 2012
View article titled, Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures
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