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Journal Articles

Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO₂

Yifei Yang, Sreejith Nair, Yihong Fan, Yu-Chia Chen, Qi Jia, Onri Jay Benally, Seungjun Lee, Seung Gyo Jeong, Zhifei Yang, Tony Low, Bharat Jalan, Jian-Ping Wang

Appl. Phys. Lett. 126, 102403 (2025)

https://doi.org/10.1063/5.0240538

Published: March 2025

View articletitled, Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO2

Journal Articles

Solid-source metal-organic MBE for elemental Ir and Ru films

Sreejith Nair, Kyle Noordhoek, Dooyong Lee, Christopher J. Bartel, Bharat Jalan

J. Vac. Sci. Technol. A 41, 062701 (2023)

https://doi.org/10.1116/6.0002955

Published: September 2023

View articletitled, Solid-source metal-organic MBE for elemental Ir and Ru films

Includes: Supplementary data

Journal Articles

Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO₃ films

Chi Zhang, Fengdeng Liu, Silu Guo, Yingying Zhang, Xiaotian Xu, K. Andre Mkhoyan, Bharat Jalan, Xiaojia Wang

Appl. Phys. Lett. 123, 042201 (2023)

https://doi.org/10.1063/5.0156367

Published: July 2023

View articletitled, Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO3 films

Includes: Supplementary data

Journal Articles

Coherent phonon relaxation in strontium titanate

Jeremy Sylvester, Rashmi Choudhary, Bharat Jalan, Feruz Ganikhanov

Appl. Phys. Lett. 123, 022201 (2023)

https://doi.org/10.1063/5.0153409

Published: July 2023

View articletitled, Coherent phonon relaxation in strontium titanate

Journal Articles

Growing clean crystals from dirty precursors: Solid-source metal-organic molecular beam epitaxy growth of superconducting Sr₂RuO₄ films

Rashmi Choudhary, Zhaoyu Liu, Jiaqi Cai, Xiaodong Xu, Jiun-Haw Chu, Bharat Jalan

APL Mater. 11, 061124 (2023)

https://doi.org/10.1063/5.0150893

Published: June 2023

View articletitled, Growing clean crystals from dirty precursors: Solid-source metal-organic molecular beam epitaxy growth of superconducting Sr2RuO4 films

Includes: Supplementary data

Journal Articles

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Prakash P. Sundaram, Fengdeng Liu, Fikadu Alema, Andrei Osinsky, Bharat Jalan, Steven J. Koester

Appl. Phys. Lett. 122, 232105 (2023)

https://doi.org/10.1063/5.0155622

Published: June 2023

View articletitled, Characterization of (001) β-Ga2O3 Schottky diodes with drift layer grown by MOCVD

Includes: Supplementary data

Journal Articles

Sn-modified BaTiO₃ thin film with enhanced polarization

William Nunn, Abinash Kumar, Rui Zu, Bailey Nebgen, Shukai Yu, Anusha Kamath Manjeshwar, Venkatraman Gopalan, James M. LeBeau, Richard D. James, Bharat Jalan

J. Vac. Sci. Technol. A 41, 022701 (2023)

https://doi.org/10.1116/6.0002208

Published: January 2023

View articletitled, Sn-modified BaTiO3 thin film with enhanced polarization

Includes: Supplementary data

Journal Articles

Self-heating in ultra-wide bandgap n-type SrSnO₃ thin films

Prafful Golani, Chinmoy Nath Saha, Prakash P. Sundaram, Fengdeng Liu, Tristan K. Truttmann, V. R. Saran Kumar Chaganti, Bharat Jalan, Uttam Singisetti, Steven J. Koester

Appl. Phys. Lett. 121, 162102 (2022)

https://doi.org/10.1063/5.0105962

Published: October 2022

View articletitled, Self-heating in ultra-wide bandgap n-type SrSnO3 thin films

Includes: Supplementary data

Journal Articles

Semi-metallic SrIrO₃ films using solid-source metal-organic molecular beam epitaxy

Rashmi Choudhary, Sreejith Nair, Zhifei Yang, Dooyong Lee, Bharat Jalan

APL Mater. 10, 091118 (2022)

https://doi.org/10.1063/5.0110707

Published: September 2022

View articletitled, Semi-metallic SrIrO3 films using solid-source metal-organic molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Preface for the special topic collection honoring Dr. Scott Chambers’ 70th birthday and his leadership in the science and technology of oxide thin films

Tiffany C. Kaspar, Yingge Du, Mark H. Engelhard, Don R. Baer, Bharat Jalan, Joseph H. Ngai

J. Vac. Sci. Technol. A 40, 041602 (2022)

https://doi.org/10.1116/6.0001942

Published: June 2022

View articletitled, Preface for the special topic collection honoring Dr. Scott Chambers’ 70th birthday and his leadership in the science and technology of oxide thin films

Journal Articles

Stoichiometry-dependent surface electronic structure of SrTiO₃ films grown by hybrid molecular beam epitaxy

Dooyong Lee, Fengdeng Liu, Tristan K. Truttmann, Scott A. Chambers, Bharat Jalan

Appl. Phys. Lett. 120, 121604 (2022)

https://doi.org/10.1063/5.0082636

Published: March 2022

View articletitled, Stoichiometry-dependent surface electronic structure of SrTiO3 films grown by hybrid molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Solid-source metal–organic molecular beam epitaxy of epitaxial RuO₂

William Nunn, Sreejith Nair, Hwanhui Yun, Anusha Kamath Manjeshwar, Anil Rajapitamahuni, Dooyong Lee, K. Andre Mkhoyan, Bharat Jalan

APL Mater. 9, 091112 (2021)

https://doi.org/10.1063/5.0062726

Published: September 2021

View articletitled, Solid-source metal–organic molecular beam epitaxy of epitaxial RuO2

Includes: Supplementary data

Journal Articles

Hybrid molecular beam epitaxy growth of BaTiO₃ films

William Nunn, Sara Sandlass, Maike Wegner, Ryan Haislmaier, Abinash Kumar, Malleswararao Tangi, James LeBeau, Eckhard Quandt, Richard D. James, Bharat Jalan

J. Vac. Sci. Technol. A 39, 040404 (2021)

https://doi.org/10.1116/6.0001140

Published: June 2021

View articletitled, Hybrid molecular beam epitaxy growth of BaTiO3 films

Includes: Supplementary data

Journal Articles

Optimizing Ohmic contacts to Nd-doped n-type SrSnO₃

V. R. Saran Kumar Chaganti, Prafful Golani, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester

Appl. Phys. Lett. 118, 142104 (2021)

https://doi.org/10.1063/5.0027470

Published: April 2021

View articletitled, Optimizing Ohmic contacts to Nd-doped n-type SrSnO3

Includes: Supplementary data

Journal Articles

Impurity band conduction in Si-doped β -Ga₂O₃ films

Anil Kumar Rajapitamahuni, Laxman Raju Thoutam, Praneeth Ranga, Sriram Krishnamoorthy, Bharat Jalan

Appl. Phys. Lett. 118, 072105 (2021)

https://doi.org/10.1063/5.0031481

Published: February 2021

View articletitled, Impurity band conduction in Si-doped β -Ga2O3 films

Includes: Supplementary data

Journal Articles

Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates

Abhinav Prakash, Tianqi Wang, Rashmi Choudhary, Greg Haugstad, Wayne L. Gladfelter, Bharat Jalan

J. Vac. Sci. Technol. A 38, 063410 (2020)

https://doi.org/10.1116/6.0000590

Published: November 2020

View articletitled, Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates

Includes: Supplementary data

Journal Articles

Scattering mechanisms and mobility enhancement in epitaxial BaSnO₃ thin films probed via electrolyte gating

Helin Wang, Abhinav Prakash, Konstantin Reich, Koustav Ganguly, Bharat Jalan, Chris Leighton

APL Mater. 8, 071113 (2020)

https://doi.org/10.1063/5.0017227

Published: July 2020

View articletitled, Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating

Includes: Supplementary data

Journal Articles

Dopant solubility and charge compensation in La-doped SrSnO₃ films

Tristan Truttmann, Abhinav Prakash, Jin Yue, Thomas E. Mates, Bharat Jalan

Appl. Phys. Lett. 115, 152103 (2019)

https://doi.org/10.1063/1.5119272

Published: October 2019

View articletitled, Dopant solubility and charge compensation in La-doped SrSnO3 films

Includes: Supplementary data

Journal Articles

Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO₃ films

Jin Yue, Laxman R. Thoutam, Abhinav Prakash, Tianqi Wang, Bharat Jalan

Appl. Phys. Lett. 115, 082102 (2019)

https://doi.org/10.1063/1.5113522

Published: August 2019

View articletitled, Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO3 films

Includes: Supplementary data

Journal Articles

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO₃ films

William Nunn, Abhinav Prakash, Arghya Bhowmik, Ryan Haislmaier, Jin Yue, Juan Maria Garcia Lastra, Bharat Jalan

APL Mater. 6, 066107 (2018)

https://doi.org/10.1063/1.5027567

Published: June 2018

View articletitled, Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films

Includes: Supplementary data

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Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO₂

Solid-source metal-organic MBE for elemental Ir and Ru films

Temperature-dependent thermal conductivity of MBE-grown epitaxial SrSnO₃ films

Coherent phonon relaxation in strontium titanate

Growing clean crystals from dirty precursors: Solid-source metal-organic molecular beam epitaxy growth of superconducting Sr₂RuO₄ films

Characterization of (001) β-Ga₂O₃ Schottky diodes with drift layer grown by MOCVD

Sn-modified BaTiO₃ thin film with enhanced polarization

Self-heating in ultra-wide bandgap n-type SrSnO₃ thin films

Semi-metallic SrIrO₃ films using solid-source metal-organic molecular beam epitaxy

Preface for the special topic collection honoring Dr. Scott Chambers’ 70th birthday and his leadership in the science and technology of oxide thin films

Stoichiometry-dependent surface electronic structure of SrTiO₃ films grown by hybrid molecular beam epitaxy

Solid-source metal–organic molecular beam epitaxy of epitaxial RuO₂

Hybrid molecular beam epitaxy growth of BaTiO₃ films

Optimizing Ohmic contacts to Nd-doped n-type SrSnO₃

Impurity band conduction in Si-doped β -Ga₂O₃ films

Precursor selection in hybrid molecular beam epitaxy of alkaline-earth stannates

Scattering mechanisms and mobility enhancement in epitaxial BaSnO₃ thin films probed via electrolyte gating

Dopant solubility and charge compensation in La-doped SrSnO₃ films

Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO₃ films

Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO₃ films

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