Page 1 | Search Results | AIP Publishing

1-19 of 19

Sort by

Sort Order Select

Journal Articles

Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Alexandra Ibanez, Nikita Nikitskiy, Aly Zaiter, Pierre Valvin, Wilfried Desrat, Thomas Cohen, M. Ajmal Khan, Guillaume Cassabois, Hideki Hirayama, Patrice Genevet, Julien Brault, Bernard Gil

J. Appl. Phys. 134, 193103 (2023)

https://doi.org/10.1063/5.0170867

Published: November 2023

View articletitled, Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Includes: Supplementary data

Journal Articles

Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures

Matthieu Moret, Adrien Rousseau, Pierre Valvin, Sachin Sharma, Laurent Souqui, Henrik Pedersen, Hans Högberg, Guillaume Cassabois, Jianhan Li, J. H. Edgar, Bernard Gil

Appl. Phys. Lett. 119, 262102 (2021)

https://doi.org/10.1063/5.0076424

Published: December 2021

View articletitled, Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures

Journal Articles

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Pierre Ruterana, Magali Morales, Nicolas Chery, Thi Huong Ngo, Marie-Pierre Chauvat, Kaddour Lekhal, Benjamin Damilano, Bernard Gil

J. Appl. Phys. 128, 223102 (2020)

https://doi.org/10.1063/5.0027119

Published: December 2020

View articletitled, Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Journal Articles

Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

Pierre Valvin, Thomas Pelini, Guillaume Cassabois, Alberto Zobelli, Jiahan Li, James H. Edgar, Bernard Gil

AIP Advances 10, 075025 (2020)

https://doi.org/10.1063/5.0013121

Published: July 2020

View articletitled, Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

Journal Articles

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Appl. Phys. Lett. 112, 253102 (2018)

https://doi.org/10.1063/1.5029220

Published: June 2018

View articletitled, Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Includes: Supplementary data

Journal Articles

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

Thi Huong Ngo, Bernard Gil, Benjamin Damilano, Pierre Valvin, Aimeric Courville, Philippe de Mierry

J. Appl. Phys. 122, 063103 (2017)

https://doi.org/10.1063/1.4997608

Published: August 2017

View articletitled, Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

Journal Articles

Stacking fault and defects in single domain multilayered hexagonal boron nitride

Hugo Henck, Debora Pierucci, Zeineb Ben Aziza, Mathieu G. Silly, Bernard Gil, Fausto Sirotti, Guillaume Cassabois, Abdelkarim Ouerghi

Appl. Phys. Lett. 110, 023101 (2017)

https://doi.org/10.1063/1.4972848

Published: January 2017

View articletitled, Stacking fault and defects in single domain multilayered hexagonal boron nitride

Includes: Supplementary data

Journal Articles

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Thi Huong Ngo, Bernard Gil, Pierre Valvin, Benjamin Damilano, Kaddour Lekhal, Philippe De Mierry

Appl. Phys. Lett. 107, 122103 (2015)

https://doi.org/10.1063/1.4931624

Published: September 2015

View articletitled, Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Journal Articles

Optical properties and structural investigations of (11-22)-oriented GaN/Al_0.5Ga_0.5N quantum wells grown by molecular beam epitaxy

Daniel Rosales, Bernard Gil, Thierry Bretagnon, Julien Brault, Philippe Vennéguès, Maud Nemoz, Philippe de Mierry, Benjamin Damilano, Jean Massies, Pierre Bigenwald

J. Appl. Phys. 118, 024303 (2015)

https://doi.org/10.1063/1.4923306

Published: July 2015

View articletitled, Optical properties and structural investigations of (11-22)-oriented GaN/Al0.5Ga0.5N quantum wells grown by molecular beam epitaxy

Journal Articles

Determination of carrier diffusion length in GaN

Shopan Hafiz, Fan Zhang, Morteza Monavarian, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür, Sebastian Metzner, Frank Bertram, Jürgen Christen, Bernard Gil

J. Appl. Phys. 117, 013106 (2015)

https://doi.org/10.1063/1.4905506

Published: January 2015

View articletitled, Determination of carrier diffusion length in GaN

Journal Articles

Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

Sergey V. Ovsyannikov, Vladimir V. Shchennikov, Alexander E. Karkin, Alain Polian, Olivier Briot, Sandra Ruffenach, Bernard Gil, Matthieu Moret

Appl. Phys. Lett. 97, 032105 (2010)

https://doi.org/10.1063/1.3466913

Published: July 2010

View articletitled, Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

Journal Articles

Symmetry properties and anisotropic excitonic response for GaN films grown on semipolar ( 11 − 22 ) -, ( 10 − 11 ) -, and ( 10 − 13 ) -oriented GaN substrates

Bernard Gil

Appl. Phys. Lett. 90, 121903 (2007)

https://doi.org/10.1063/1.2715003

Published: March 2007

View articletitled, Symmetry properties and anisotropic excitonic response for GaN films grown on semipolar ( 11 − 22 ) -, ( 10 − 11 ) -, and ( 10 − 13 ) -oriented GaN substrates

Journal Articles

Comment on “Influence of biaxial strains on the vibrational and exciton energies in ZnO ” [J. Appl. Phys. 96, 289 (2004)]

Bernard Gil

J. Appl. Phys. 98, 086114 (2005)

https://doi.org/10.1063/1.2115088

Published: October 2005

View articletitled, Comment on “Influence of biaxial strains on the vibrational and exciton energies in ZnO ” [J. Appl. Phys. 96, 289 (2004)]

Journal Articles

Giant exciton-light coupling in ZnO quantum dots

Bernard Gil, Alexey V. Kavokin

Appl. Phys. Lett. 81, 748–750 (2002)

https://doi.org/10.1063/1.1494864

Published: July 2002

View articletitled, Giant exciton-light coupling in ZnO quantum dots

Journal Articles

Carrier relaxation dynamics for As defects in GaN

Bernard Gil, Aurélien Morel, Thierry Taliercio, Pierre Lefebvre, C. T. Foxon, I. Harrison, A. J. Winser, S. V. Novikov

Appl. Phys. Lett. 79, 69–71 (2001)

https://doi.org/10.1063/1.1380400

Published: July 2001

View articletitled, Carrier relaxation dynamics for As defects in GaN

Journal Articles

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Tomasz J. Ochalski, Bernard Gil, Pierre Lefebvre, Nicolas Grandjean, Mathieu Leroux, Jean Massies, Shuji Nakamura, Hadis Morkoç

Appl. Phys. Lett. 74, 3353–3355 (1999)

https://doi.org/10.1063/1.123342

Published: May 1999

View articletitled, Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Journal Articles

GaN microcavities: Giant Rabi splitting and optical anisotropy

Alexey Kavokin, Bernard Gil

Appl. Phys. Lett. 72, 2880–2881 (1998)

https://doi.org/10.1063/1.121488

Published: June 1998

View articletitled, GaN microcavities: Giant Rabi splitting and optical anisotropy

Journal Articles

Optical properties of GaN epilayers on sapphire

Magloire Tchounkeu, Olivier Briot, Bernard Gil, Jean Paul Alexis, Roger‐Louis Aulombard

J. Appl. Phys. 80, 5352–5360 (1996)

https://doi.org/10.1063/1.363475

Published: November 1996

View articletitled, Optical properties of GaN epilayers on sapphire

Journal Articles

Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells

Xiaobo Zhang, Olivier Briot, Bernard Gil, Roger Aulombard

J. Appl. Phys. 78, 5490–5492 (1995)

https://doi.org/10.1063/1.360695

Published: November 1995

View articletitled, Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells

Update search

NARROW

Format

Collections

Topics

Journal

Article Type

Issue Section

Date

Availability

Excitons in (Al,Ga)N quantum dots and quantum wells grown on (0001)-oriented AlN templates: Emission diagrams and valence band mixings

Rhombohedral and turbostratic boron nitride: X-ray diffraction and photoluminescence signatures

Effect of AlGaN interlayer on the GaN/InGaN/GaN/AlGaN multi-quantum wells structural properties toward red light emission

Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

Stacking fault and defects in single domain multilayered hexagonal boron nitride

Internal quantum efficiency in yellow-amber light emitting AlGaN-InGaN-GaN heterostructures

Optical properties and structural investigations of (11-22)-oriented GaN/Al_0.5Ga_0.5N quantum wells grown by molecular beam epitaxy

Determination of carrier diffusion length in GaN

Pressure cycling of InN to 20 GPa: In situ transport properties and amorphization

Symmetry properties and anisotropic excitonic response for GaN films grown on semipolar ( 11 − 22 ) -, ( 10 − 11 ) -, and ( 10 − 13 ) -oriented GaN substrates

Comment on “Influence of biaxial strains on the vibrational and exciton energies in ZnO ” [J. Appl. Phys. 96, 289 (2004)]

Giant exciton-light coupling in ZnO quantum dots

Carrier relaxation dynamics for As defects in GaN

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

GaN microcavities: Giant Rabi splitting and optical anisotropy

Optical properties of GaN epilayers on sapphire

Critical layer thickness in metal organic chemical vapor deposition grown InGaAs/GaAs strained quantum wells

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only