1-20 of 71
B. S. Kang
Close
Save search
Follow your search
Access your saved searches in your account
Close Modal
Sort by
Journal Articles

Behavior of magnetic entropy change in perovskite Ba2−xLaxFeMoO6

K. S. Kim, M. S. Lee, Y. D. Zhang, B. S. Kang, S. C. Yu, B. W. Lee
Journal: Journal of Applied Physics
Series: Magnetism and Magnetic Materials
J. Appl. Phys. 111, 07A947 (2012)
https://doi.org/10.1063/1.3679868
Published: March 2012
View article titled, Behavior of magnetic entropy change in perovskite Ba<sub>2−</sub><sub><em>x</em></sub>La<sub><em>x</em></sub>FeMoO<sub>6</sub>
Open the PDF for Behavior of magnetic entropy change in perovskite Ba<sub>2−</sub><sub><em>x</em></sub>La<sub><em>x</em></sub>FeMoO<sub>6</sub> in another window
Journal Articles

Erratum: “Conversion from unipolar to bipolar resistance switching by inserting Ta2O5 layer in Pt/TaOx/Pt cells” [Appl. Phys. Lett. 98, 183507 (2011)]

H. K. Yoo, S. B. Lee, J. S. Lee, S. H. Chang, M. J. Yoon, Y. S. Kim, B. S. Kang, M.-J. Lee, C. J. Kim, B. Kahng, T. W. Noh
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 059901 (2012)
https://doi.org/10.1063/1.3682490
Published: February 2012
View article titled, Erratum: “Conversion from unipolar to bipolar resistance switching by inserting Ta<sub>2</sub>O<sub>5</sub> layer in Pt/TaO<sub><em>x</em></sub>/Pt cells” [Appl. Phys. Lett. 98, 183507 (2011)]
Open the PDF for Erratum: “Conversion from unipolar to bipolar resistance switching by inserting Ta<sub>2</sub>O<sub>5</sub> layer in Pt/TaO<sub><em>x</em></sub>/Pt cells” [Appl. Phys. Lett. 98, 183507 (2011)] in another window
Journal Articles

Conversion from unipolar to bipolar resistance switching by inserting Ta 2 O 5 layer in Pt / TaO x / Pt cells

H. K. Yoo, S. B. Lee, J. S. Lee, S. H. Chang, M. J. Yoon, Y. S. Kim, B. S. Kang, M.-J. Lee, C. J. Kim, B. Kahng, T. W. Noh
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 183507 (2011)
https://doi.org/10.1063/1.3587809
Published: May 2011
View article titled, Conversion from unipolar to bipolar resistance switching by inserting Ta 2 O 5 layer in Pt / TaO x / Pt cells
Open the PDF for Conversion from unipolar to bipolar resistance switching by inserting Ta 2 O 5 layer in Pt / TaO x / Pt cells in another window
Journal Articles

Time-dependent current-voltage curves during the forming process in unipolar resistance switching

S. B. Lee, H. K. Yoo, S. H. Chang, L. G. Gao, B. S. Kang, M.-J. Lee, C. J. Kim, T. W. Noh
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 053503 (2011)
https://doi.org/10.1063/1.3552676
Published: February 2011
View article titled, Time-dependent current-voltage curves during the forming process in unipolar resistance switching
Open the PDF for Time-dependent current-voltage curves during the forming process in unipolar resistance switching in another window
Journal Articles

Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

S. B. Lee, J. S. Lee, S. H. Chang, H. K. Yoo, B. S. Kang, B. Kahng, M.-J. Lee, C. J. Kim, T. W. Noh
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 033502 (2011)
https://doi.org/10.1063/1.3543776
Published: January 2011
View article titled, Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching
Open the PDF for Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching in another window
Includes: Supplementary data
Journal Articles

Reduction in high reset currents in unipolar resistance switching Pt / SrTiO x / Pt capacitors using acceptor doping

S. B. Lee, A. Kim, J. S. Lee, S. H. Chang, H. K. Yoo, T. W. Noh, B. Kahng, M.-J. Lee, C. J. Kim, B. S. Kang
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 093505 (2010)
https://doi.org/10.1063/1.3486460
Published: September 2010
View article titled, Reduction in high reset currents in unipolar resistance switching Pt / SrTiO x / Pt capacitors using acceptor doping
Open the PDF for Reduction in high reset currents in unipolar resistance switching Pt / SrTiO x / Pt capacitors using acceptor doping in another window
Includes: Supplementary data
Journal Articles

Large 1 / f noise of unipolar resistance switching and its percolating nature

S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M.-J. Lee, T. W. Noh
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 122112 (2009)
https://doi.org/10.1063/1.3237167
Published: September 2009
View article titled, Large 1 / f noise of unipolar resistance switching and its percolating nature
Open the PDF for Large 1 / f noise of unipolar resistance switching and its percolating nature in another window
Journal Articles

Enzyme-based lactic acid detection using Al Ga N ∕ Ga N high electron mobility transistors with ZnO nanorods grown on the gate region

B. H. Chu, B. S. Kang, F. Ren, C. Y. Chang, Y. L. Wang, S. J. Pearton, A. V. Glushakov, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 042114 (2008)
https://doi.org/10.1063/1.2966158
Published: August 2008
View article titled, Enzyme-based lactic acid detection using Al Ga N ∕ Ga N high electron mobility transistors with ZnO nanorods grown on the gate region
Open the PDF for Enzyme-based lactic acid detection using Al Ga N ∕ Ga N high electron mobility transistors with ZnO nanorods grown on the gate region in another window
Journal Articles

Effects of metal electrodes on the resistive memory switching property of NiO thin films

C. B. Lee, B. S. Kang, A. Benayad, M. J. Lee, S.-E. Ahn, K. H. Kim, G. Stefanovich, Y. Park, I. K. Yoo
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 042115 (2008)
https://doi.org/10.1063/1.2967194
Published: August 2008
View article titled, Effects of metal electrodes on the resistive memory switching property of NiO thin films
Open the PDF for Effects of metal electrodes on the resistive memory switching property of NiO thin films in another window
Journal Articles

Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors

B. S. Kang, H. T. Wang, F. Ren, S. J. Pearton
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 031101 (2008)
https://doi.org/10.1063/1.2959429
Published: August 2008
View article titled, Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors
Open the PDF for Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors in another window
Journal Articles

Defect-induced degradation of rectification properties of aged Pt ∕ n - In x Zn 1 − x O y Schottky diodes

K. H. Kim, B. S. Kang, M.-J. Lee, S.-E. Ahn, C. B. Lee, G. Stefanovich, W. X. Xianyu, K.-K. Kim, J. S. Kim, I. K. Yoo, Y. Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 233507 (2008)
https://doi.org/10.1063/1.2942385
Published: June 2008
View article titled, Defect-induced degradation of rectification properties of aged Pt ∕ n - In x Zn 1 − x O y Schottky diodes
Open the PDF for Defect-induced degradation of rectification properties of aged Pt ∕ n - In x Zn 1 − x O y Schottky diodes in another window
Journal Articles

C O 2 detection using polyethylenimine/starch functionalized Al Ga N ∕ Ga N high electron mobility transistors

C. Y. Chang, B. S. Kang, H. T. Wang, F. Ren, Y. L. Wang, S. J. Pearton, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 232102 (2008)
https://doi.org/10.1063/1.2937126
Published: June 2008
View article titled, C O 2 detection using polyethylenimine/starch functionalized Al Ga N ∕ Ga N high electron mobility transistors
Open the PDF for C O 2 detection using polyethylenimine/starch functionalized Al Ga N ∕ Ga N high electron mobility transistors in another window
Journal Articles

Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films

I. K. Yoo, B. S. Kang, Y. D. Park, M. J. Lee, Y. Park
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 202112 (2008)
https://doi.org/10.1063/1.2936087
Published: May 2008
View article titled, Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films
Open the PDF for Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films in another window
Journal Articles

c-erbB-2 sensing using Al Ga N ∕ Ga N high electron mobility transistors for breast cancer detection

K. H. Chen, B. S. Kang, H. T. Wang, T. P. Lele, F. Ren, Y. L. Wang, C. Y. Chang, S. J. Pearton, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 192103 (2008)
https://doi.org/10.1063/1.2926656
Published: May 2008
View article titled, c-erbB-2 sensing using Al Ga N ∕ Ga N high electron mobility transistors for breast cancer detection
Open the PDF for c-erbB-2 sensing using Al Ga N ∕ Ga N high electron mobility transistors for breast cancer detection in another window
Journal Articles

Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory

M. J. Lee, Y. Park, S. E. Ahn, B. S. Kang, C. B. Lee, K. H. Kim, W. X. Xianyu, I. K. Yoo, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, K. N. Choi, K. S. Chung
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 013706 (2008)
https://doi.org/10.1063/1.2829814
Published: January 2008
View article titled, Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory
Open the PDF for Comparative structural and electrical analysis of NiO and Ti doped NiO as materials for resistance random access memory in another window
Journal Articles

Enzymatic glucose detection using ZnO nanorods on the gate region of Al Ga N ∕ Ga N high electron mobility transistors

B. S. Kang, H. T. Wang, F. Ren, S. J. Pearton, T. E. Morey, D. M. Dennis, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 252103 (2007)
https://doi.org/10.1063/1.2825574
Published: December 2007
View article titled, Enzymatic glucose detection using ZnO nanorods on the gate region of Al Ga N ∕ Ga N high electron mobility transistors
Open the PDF for Enzymatic glucose detection using ZnO nanorods on the gate region of Al Ga N ∕ Ga N high electron mobility transistors in another window
Journal Articles

Electrical detection of kidney injury molecule-1 with Al Ga N ∕ Ga N high electron mobility transistors

H. T. Wang, B. S. Kang, F. Ren, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 222101 (2007)
https://doi.org/10.1063/1.2815931
Published: November 2007
View article titled, Electrical detection of kidney injury molecule-1 with Al Ga N ∕ Ga N high electron mobility transistors
Open the PDF for Electrical detection of kidney injury molecule-1 with Al Ga N ∕ Ga N high electron mobility transistors in another window
Journal Articles

The effect of jet velocity profile on the characteristics of thickness and velocity of the liquid sheet formed by two impinging jets

Y. J. Choo, B. S. Kang
Journal: Physics of Fluids
Physics of Fluids 19, 112101 (2007)
https://doi.org/10.1063/1.2795780
Published: November 2007
View article titled, The effect of jet velocity profile on the characteristics of thickness and velocity of the liquid sheet formed by two impinging jets
Open the PDF for The effect of jet velocity profile on the characteristics of thickness and velocity of the liquid sheet formed by two impinging jets in another window
Journal Articles

Data retention characteristics of Bi 3.25 La 0.75 Ti 3 O 12 thin films on conductive Sr Ru O 3 electrodes

Jang-Sik Lee, B. S. Kang, Q. X. Jia
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 142901 (2007)
https://doi.org/10.1063/1.2780118
Published: October 2007
View article titled, Data retention characteristics of Bi 3.25 La 0.75 Ti 3 O 12 thin films on conductive Sr Ru O 3 electrodes
Open the PDF for Data retention characteristics of Bi 3.25 La 0.75 Ti 3 O 12 thin films on conductive Sr Ru O 3 electrodes in another window
Journal Articles

Prostate specific antigen detection using Al Ga N ∕ Ga N high electron mobility transistors

B. S. Kang, H. T. Wang, T. P. Lele, Y. Tseng, F. Ren, S. J. Pearton, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Piner, K. J. Linthicum
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 112106 (2007)
https://doi.org/10.1063/1.2772192
Published: September 2007
View article titled, Prostate specific antigen detection using Al Ga N ∕ Ga N high electron mobility transistors
Open the PDF for Prostate specific antigen detection using Al Ga N ∕ Ga N high electron mobility transistors in another window