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Journal Articles

Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

M. O. Eriksson, S. Khromov, P. P. Paskov, X. Wang, A. Yoshikawa, P. O. Holtz, B. Monemar, V. Darakchieva
Journal: AIP Advances
AIP Advances 9, 015114 (2019)
https://doi.org/10.1063/1.5052432
Published: January 2019
View article titled, Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity
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Journal Articles

Electronic properties of the residual donor in unintentionally doped β-Ga2O3

N. T. Son, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, B. Monemar, E. Janzén
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 235703 (2016)
https://doi.org/10.1063/1.4972040
Published: December 2016
View article titled, Electronic properties of the residual donor in unintentionally doped β-Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

S. Khromov, P. O. Å. Persson, X. Wang, A. Yoshikawa, B. Monemar, J. Rosen, E. Janzén, V. Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 232102 (2015)
https://doi.org/10.1063/1.4922301
Published: June 2015
View article titled, Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN
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Journal Articles

Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy

S. Khromov, C. Hemmingsson, B. Monemar, L. Hultman, G. Pozina
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 223503 (2014)
https://doi.org/10.1063/1.4903819
Published: December 2014
View article titled, Optical properties of C-doped bulk GaN wafers grown by halide vapor phase epitaxy
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Journal Articles

Effect of Mg doping on the structural and free-charge carrier properties of InN films

M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, V. Darakchieva
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 163504 (2014)
https://doi.org/10.1063/1.4871975
Published: April 2014
View article titled, Effect of Mg doping on the structural and free-charge carrier properties of InN films
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Journal Articles

Properties of the main Mg-related acceptors in GaN from optical and structural studies

B. Monemar, P. P. Paskov, G. Pozina, C. Hemmingsson, J. P. Bergman, S. Khromov, V. N. Izyumskaya, V. Avrutin, X. Li, H. Morkoç, H. Amano, M. Iwaya, I. Akasaki
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 053507 (2014)
https://doi.org/10.1063/1.4862928
Published: February 2014
View article titled, Properties of the main Mg-related acceptors in GaN from optical and structural studies
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Journal Articles

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, H. Morkoç, L. Hultman, G. Pozina
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 192101 (2013)
https://doi.org/10.1063/1.4828820
Published: November 2013
View article titled, Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN
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Journal Articles

Suppression of the quantum-confined Stark effect in AlxGa1−xN/AlyGa1−yN corrugated quantum wells

A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Jmerik, D. V. Nechaev, M. A. Yagovkina, A. A. Sitnikova, S. V. Ivanov, G. Pozina, J. P. Bergman, B. Monemar
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 124306 (2013)
https://doi.org/10.1063/1.4822155
Published: September 2013
View article titled, Suppression of the quantum-confined Stark effect in Al<sub>x</sub>Ga<sub>1−x</sub>N/Al<sub>y</sub>Ga<sub>1−y</sub>N corrugated quantum wells
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Journal Articles

Surface potential effect on excitons in AlGaN/GaN quantum well structures

G. Pozina, C. Hemmingsson, H. Amano, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 082110 (2013)
https://doi.org/10.1063/1.4793568
Published: March 2013
View article titled, Surface potential effect on excitons in AlGaN/GaN quantum well structures
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Journal Articles

Optical and structural studies of homoepitaxially grown m-plane GaN

S. Khromov, B. Monemar, V. Avrutin, Xing Li, H. Morkoç, L. Hultman, G. Pozina
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 172108 (2012)
https://doi.org/10.1063/1.4706258
Published: April 2012
View article titled, Optical and structural studies of homoepitaxially grown <em>m</em>-plane GaN
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Journal Articles

Excitonic parameters of GaN studied by time-of-flight spectroscopy

T. V. Shubina, A. A. Toropov, G. Pozina, J. P. Bergman, M. M. Glazov, N. A. Gippius, P. Disseix, J. Leymarie, B. Gil, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 101108 (2011)
https://doi.org/10.1063/1.3625431
Published: September 2011
View article titled, Excitonic parameters of GaN studied by time-of-flight spectroscopy
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Journal Articles

Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material

V. Darakchieva, K. Lorenz, N. P. Barradas, E. Alves, B. Monemar, M. Schubert, N. Franco, C. L. Hsiao, L. C. Chen, W. J. Schaff, L. W. Tu, T. Yamaguchi, Y. Nanishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 081907 (2010)
https://doi.org/10.1063/1.3327333
Published: February 2010
View article titled, Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
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Journal Articles

Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy

G. Pozina, C. Hemmingsson, J. P. Bergman, T. Kawashima, H. Amano, I. Akasaki, A. Usui, B. Monemar
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1199, 110–111 (2010)
https://doi.org/10.1063/1.3295320
Published: January 2010
View article titled, Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy
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Journal Articles

Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry

V. Darakchieva, M. Schubert, T. Hofmann, B. Monemar, Ching-Lien Hsiao, Ting-Wei Liu, Li-Chyong Chen, W. J. Schaff, Y. Takagi, Y. Nanishi
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 202103 (2009)
https://doi.org/10.1063/1.3261731
Published: November 2009
View article titled, Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
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Journal Articles

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P. O. Å. Persson, F. Giuliani, E. Alves, H. Lu, W. J. Schaff
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 022109 (2009)
https://doi.org/10.1063/1.3065030
Published: January 2009
View article titled, Free electron behavior in InN: On the role of dislocations and surface electron accumulation
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Journal Articles

Lattice parameters, deviations from Vegard’s rule, and E 2 phonons in InAlN

V. Darakchieva, M.-Y. Xie, F. Tasnádi, I. A. Abrikosov, L. Hultman, B. Monemar, J. Kamimura, K. Kishino
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 261908 (2008)
https://doi.org/10.1063/1.3056656
Published: December 2008
View article titled, Lattice parameters, deviations from Vegard’s rule, and E 2 phonons in InAlN
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Journal Articles

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4 H -SiC substrate

G. Pozina, C. Hemmingsson, U. Forsberg, A. Lundskog, A. Kakanakova-Georgieva, B. Monemar, L. Hultman, E. Janzén
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 113513 (2008)
https://doi.org/10.1063/1.3028687
Published: December 2008
View article titled, Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4 H -SiC substrate
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Journal Articles

Time-resolved cathodoluminescence of Mg-doped GaN

A. M. Fischer, S. Srinivasan, F. A. Ponce, B. Monemar, F. Bertram, J. Christen
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 151901 (2008)
https://doi.org/10.1063/1.3000383
Published: October 2008
View article titled, Time-resolved cathodoluminescence of Mg-doped GaN
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Journal Articles

Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al 1 − x In x N films grown on sapphire

V. Darakchieva, M. Beckers, M.-Y. Xie, L. Hultman, B. Monemar, J.-F. Carlin, E. Feltin, M. Gonschorek, N. Grandjean
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 103513 (2008)
https://doi.org/10.1063/1.2924426
Published: May 2008
View article titled, Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al 1 − x In x N films grown on sapphire
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Journal Articles

Two-dimensional electron gas density in Al 1 − x In x N / AlN / GaN heterostructures ( 0.03 ≤ x ≤ 0.23 )

M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, N. Grandjean, V. Darakchieva, B. Monemar, M. Lorenz, G. Ramm
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 093714 (2008)
https://doi.org/10.1063/1.2917290
Published: May 2008
View article titled, Two-dimensional electron gas density in Al 1 − x In x N / AlN / GaN heterostructures ( 0.03 ≤ x ≤ 0.23 )
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