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Journal Articles

Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation

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S. V. Lotkhov, B. Jalali-Jafari, A. B. Zorin
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 172603 (2016)
https://doi.org/10.1063/1.4948258
Published: April 2016
View article titled, Photon-activated electron hopping in a single-electron trap enhanced by Josephson radiation
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Journal Articles

Reconstruction in time-bandwidth compression systems

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J. Chan, A. Mahjoubfar, M. Asghari, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 221105 (2014)
https://doi.org/10.1063/1.4902986
Published: December 2014
View article titled, Reconstruction in time-bandwidth compression systems
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Journal Articles

All-optical time-stretch digitizer

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A. M. Fard, B. Buckley, S. Zlatanovic, C.-S. Brès, S. Radic, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 051113 (2012)
https://doi.org/10.1063/1.4742173
Published: August 2012
View article titled, All-optical time-stretch digitizer
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Journal Articles

Stimulated supercontinuum generation extends broadening limits in silicon

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P. T. S. DeVore, D. R. Solli, C. Ropers, P. Koonath, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 101111 (2012)
https://doi.org/10.1063/1.3692103
Published: March 2012
View article titled, Stimulated supercontinuum generation extends broadening limits in silicon
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Journal Articles

Rare frustration of optical supercontinuum generation

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D. R. Solli, C. Ropers, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 151108 (2010)
https://doi.org/10.1063/1.3374860
Published: April 2010
View article titled, Rare frustration of optical supercontinuum generation
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Journal Articles

Optical phase recovery in the dispersive Fourier transform

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D. R. Solli, S. Gupta, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 231108 (2009)
https://doi.org/10.1063/1.3271678
Published: December 2009
View article titled, Optical phase recovery in the dispersive Fourier transform
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Journal Articles

Electrical tuning of birefringence in silicon waveguides

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K. K. Tsia, S. Fathpour, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 92, 061109 (2008)
https://doi.org/10.1063/1.2883925
Published: February 2008
View article titled, Electrical tuning of birefringence in silicon waveguides
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Journal Articles

Energy harvesting in silicon Raman amplifiers

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S. Fathpour, K. K. Tsia, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 061109 (2006)
https://doi.org/10.1063/1.2335625
Published: August 2006
View article titled, Energy harvesting in silicon Raman amplifiers
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Journal Articles

Broadening and tuning of spontaneous Raman emission in porous silicon at 1.5 μ m

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L. Sirleto, M. A. Ferrara, I. Rendina, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 211105 (2006)
https://doi.org/10.1063/1.2206123
Published: May 2006
View article titled, Broadening and tuning of spontaneous Raman emission in porous silicon at 1.5 μ m
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Journal Articles

Limitations of active carrier removal in silicon Raman amplifiers and lasers

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D. Dimitropoulos, S. Fathpour, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 261108 (2005)
https://doi.org/10.1063/1.2155071
Published: December 2005
View article titled, Limitations of active carrier removal in silicon Raman amplifiers and lasers
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Journal Articles

Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides

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D. Dimitropoulos, R. Jhaveri, R. Claps, J. C. S. Woo, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 071115 (2005)
https://doi.org/10.1063/1.1866635
Published: February 2005
View article titled, Lifetime of photogenerated carriers in silicon-on-insulator rib waveguides
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Journal Articles

Wavelength conversion in silicon using Raman induced four-wave mixing

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V. Raghunathan, R. Claps, D. Dimitropoulos, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 34–36 (2004)
https://doi.org/10.1063/1.1768310
Published: July 2004
View article titled, Wavelength conversion in silicon using Raman induced four-wave mixing
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Journal Articles

Transferred‐electron induced current instabilities in heterojunction bipolar transistors

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V. A. Posse, B. Jalali, A. F. J. Levi
Journal: Applied Physics Letters
Appl. Phys. Lett. 66, 3319–3321 (1995)
https://doi.org/10.1063/1.113743
Published: June 1995
View article titled, Transferred‐electron induced current instabilities in heterojunction bipolar transistors
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Journal Articles

Comparison of graded and abrupt junction In0.53Ga0.47As heterojunction bipolar transistors

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J. A. Baquedano, A. F. J. Levi, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 64, 67–69 (1994)
https://doi.org/10.1063/1.110871
Published: January 1994
View article titled, Comparison of graded and abrupt junction In0.53Ga0.47As heterojunction bipolar transistors
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Journal Articles

Forward delay in scaled Al0.48In0.52As/In0.53Ga0.47As heterojunction bipolar transistors

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J. A. Baquedano, A. F. J. Levi, B. Jalali, A. Y. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 2231–2233 (1993)
https://doi.org/10.1063/1.110536
Published: October 1993
View article titled, Forward delay in scaled Al0.48In0.52As/In0.53Ga0.47As heterojunction bipolar transistors
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Journal Articles

Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors

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J. M. Macaulay, R. Hull, B. Jalali, C. Magee
Journal: Applied Physics Letters
Appl. Phys. Lett. 63, 1258–1260 (1993)
https://doi.org/10.1063/1.109761
Published: August 1993
View article titled, Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors
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Journal Articles

Isolation properties and experimental ranges of high energy ions in GaAs and InP

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S. J. Pearton, B. Jalali, C. R. Abernathy, W. S. Hobson, J. D. Fox, K. W. Kemper, D. E. Roa
Journal: Journal of Applied Physics
J. Appl. Phys. 71, 2663–2668 (1992)
https://doi.org/10.1063/1.351038
Published: March 1992
View article titled, Isolation properties and experimental ranges of high energy ions in GaAs and InP
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Journal Articles

Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport

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A. F. J. Levi, B. Jalali, R. N. Nottenburg, A. Y. Cho
Journal: Applied Physics Letters
Appl. Phys. Lett. 60, 460–462 (1992)
https://doi.org/10.1063/1.106634
Published: January 1992
View article titled, Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
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Journal Articles

Terahertz radiation from large aperture Si p‐i‐n diodes

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L. Xu, X.‐C. Zhang, D. H. Auston, B. Jalali
Journal: Applied Physics Letters
Appl. Phys. Lett. 59, 3357–3359 (1991)
https://doi.org/10.1063/1.105725
Published: December 1991
View article titled, Terahertz radiation from large aperture Si p‐i‐n diodes
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Journal Articles

Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter

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B. Jalali, C. A. King, G. S. Higashi, J. C. Bean, R. Hull, Y.‐F. Hsieh, J. Macaulay, J. M. Poate
Journal: Applied Physics Letters
Appl. Phys. Lett. 58, 2009–2011 (1991)
https://doi.org/10.1063/1.105023
Published: May 1991
View article titled, Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter
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