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B. J. Pawlak
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Journal Articles

Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si

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B. J. Pawlak, N. E. B. Cowern, C. Ahn, W. Vandervorst, R. Gwilliam, J. G. M. van Berkum
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 221603 (2014)
https://doi.org/10.1063/1.4902972
Published: December 2014
View articletitled, Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si
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Includes: Supplementary data
Journal Articles

Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B 28 , C1H5 (2010)]

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Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, Wilfried Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, 648 (2010)
https://doi.org/10.1116/1.3432119
Published: May 2010
View articletitled, Erratum: “Experimental studies of dose retention and activation in fin field-effect-transistor-based structures” [J. Vac. Sci. Technol. B 28 , C1H5 (2010)]
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Journal Articles

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

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Jay Mody, Ray Duffy, Pierre Eyben, Jozefien Goossens, Alain Moussa, Wouter Polspoel, Bart Berghmans, M. J. H. van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, Wilfried Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 28, C1H5–C1H13 (2010)
https://doi.org/10.1116/1.3269755
Published: March 2010
View articletitled, Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
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Journal Articles

B profile alteration by annealing in reactive ambients

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B. J. Pawlak, N. E. B. Cowern, W. Vandervorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 022104 (2009)
https://doi.org/10.1063/1.3068756
Published: January 2009
View articletitled, B profile alteration by annealing in reactive ambients
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Journal Articles

Conformal Doping of FINFETs: a Fabrication and Metrology Challenge

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W. Vandervorst, J. L. Everaert, E. Rosseel, M. Jurczak, T. Hoffman, P. Eyben, J. Mody, G. Zschätzsch, S. Koelling, M. Gilbert, T. Poon, J. del Agua Borniquel, M. Foad, R. Duffy, B. J. Pawlak
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1066, 449–456 (2008)
https://doi.org/10.1063/1.3033660
Published: November 2008
View articletitled, Conformal Doping of FINFETs: a Fabrication and Metrology Challenge
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Journal Articles

Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance

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R. Duffy, G. Curatola, B. J. Pawlak, G. Doornbos, K. van der Tak, P. Breimer, J. G. M. van Berkum, F. Roozeboom
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 402–407 (2008)
https://doi.org/10.1116/1.2816925
Published: January 2008
View articletitled, Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
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Journal Articles

Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing

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S. B. Felch, E. Collart, V. Parihar, S. Thirupapuliyur, R. Schreutelkamp, B. J. Pawlak, T. Hoffmann, S. Severi, P. Eyben, W. Vandervorst, T. Noda
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 281–285 (2008)
https://doi.org/10.1116/1.2831490
Published: January 2008
View articletitled, Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing
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Journal Articles

Probing doping conformality in fin shaped field effect transistor structures using resistors

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W. Vandervorst, M. Jurczak, J.-L. Everaert, B. J. Pawlak, R. Duffy, J.-I. Del-Agua-Bomiquel, T. Poon
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 396–401 (2008)
https://doi.org/10.1116/1.2789439
Published: January 2008
View articletitled, Probing doping conformality in fin shaped field effect transistor structures using resistors
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Journal Articles

Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors

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R. Duffy, M. J. H. Van Dal, B. J. Pawlak, M. Kaiser, R. G. R. Weemaes, B. Degroote, E. Kunnen, E. Altamirano
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 241912 (2007)
https://doi.org/10.1063/1.2749186
Published: June 2007
View articletitled, Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors
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Journal Articles

Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon

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C. Torregiani, K. Maex, A. Benedetti, H. Bender, P. Van Houtte, B. J. Pawlak, J. A. Kittl
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 054101 (2007)
https://doi.org/10.1063/1.2437064
Published: January 2007
View articletitled, Impact of Ni-silicide grain orientation on the strain and stress fields induced in patterned silicon
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Journal Articles

Co‐Implantation for 45 nm PMOS and NMOS Source‐Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length

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E. J. H. Collart, B. J. Pawlak, R. Duffy, E. Augendre, S. Severi, T. Janssens, P. Absil, W. Vandervorst, S. Felch, R. Scheutelkamp, N. E. B. Cowern
Journal: AIP Conference Proceedings
AIP Conf. Proc. 866, 37–40 (2006)
https://doi.org/10.1063/1.2401456
Published: November 2006
View articletitled, Co‐Implantation for 45 nm PMOS and NMOS Source‐Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length
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Journal Articles

Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

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B. J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E. J. H. Collart, S. B. Felch, N. E. B. Cowern
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 062110 (2006)
https://doi.org/10.1063/1.2227863
Published: August 2006
View articletitled, Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
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Journal Articles

Suppression of phosphorus diffusion by carbon co-implantation

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B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S. B. Felch, E. J. H. Collart, N. E. B. Cowern
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 062102 (2006)
https://doi.org/10.1063/1.2234315
Published: August 2006
View articletitled, Suppression of phosphorus diffusion by carbon co-implantation
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Journal Articles

Co-implantation with conventional spike anneal solutions for 45 nm   n -type metal-oxide-semiconductor ultra-shallow junction formation

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E. J. H. Collart, S. B. Felch, B. J. Pawlak, P. P. Absil, S. Severi, T. Janssens, W. Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 507–509 (2006)
https://doi.org/10.1116/1.2151906
Published: January 2006
View articletitled, Co-implantation with conventional spike anneal solutions for 45 nm   n -type metal-oxide-semiconductor ultra-shallow junction formation
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Journal Articles

Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals

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R. A. Camillo-Castillo, M. E. Law, K. S. Jones, R. Lindsay, K. Maex, B. J. Pawlak, S. McCoy
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 450–455 (2006)
https://doi.org/10.1116/1.2140003
Published: January 2006
View articletitled, Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals
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Journal Articles

Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth

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B. J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, K. Maex, A. J. Smith, N. E. B. Cowern, T. Dao, Y. Tamminga
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 031915 (2005)
https://doi.org/10.1063/1.1997276
Published: July 2005
View articletitled, Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
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Journal Articles

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

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B. J. Pawlak, W. Vandervorst, A. J. Smith, N. E. B. Cowern, B. Colombeau, X. Pages
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 101913 (2005)
https://doi.org/10.1063/1.1882756
Published: March 2005
View articletitled, Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth
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Journal Articles

Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth

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W. Vandervorst, T. Janssens, B. Brijs, R. Delhougne, R. Loo, M. Caymax, B. J. Pawlak, Matthias Posselt
Journal: Applied Physics Letters
Appl. Phys. Lett. 86, 081915 (2005)
https://doi.org/10.1063/1.1862791
Published: February 2005
View articletitled, Athermal germanium migration in strained silicon layers during junction formation with solid-phase epitaxial regrowth
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Journal Articles

Boron diffusion in amorphous silicon and the role of fluorine

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R. Duffy, V. C. Venezia, A. Heringa, B. J. Pawlak, M. J. P. Hopstaken, G. C. J. Maas, Y. Tamminga, T. Dao, F. Roozeboom, L. Pelaz
Journal: Applied Physics Letters
Appl. Phys. Lett. 84, 4283–4285 (2004)
https://doi.org/10.1063/1.1751225
Published: May 2004
View articletitled, Boron diffusion in amorphous silicon and the role of fluorine
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Journal Articles

Influence of preamorphization and recrystallization on indium doping profiles in silicon

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R. Duffy, V. C. Venezia, A. Heringa, B. J. Pawlak, M. J. P. Hopstaken, Y. Tamminga, T. Dao, F. Roozeboom, C. C. Wang, C. H. Diaz, P. B. Griffin
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 22, 865–868 (2004)
https://doi.org/10.1116/1.1695333
Published: April 2004
View articletitled, Influence of preamorphization and recrystallization on indium doping profiles in silicon
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