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Journal Articles

Fabry-Perot resonance enhanced electrically pumped random lasing from ZnO films

P. N. Ni, C. X. Shan, S. P. Wang, Y. J. Lu, B. H. Li, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 231108 (2015)
https://doi.org/10.1063/1.4937472
Published: December 2015
View articletitled, Fabry-Perot resonance enhanced electrically pumped random lasing from ZnO films
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Journal Articles

High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film

M. M. Fan, K. W. Liu, Z. Z. Zhang, B. H. Li, X. Chen, D. X. Zhao, C. X. Shan, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 011117 (2014)
https://doi.org/10.1063/1.4889914
Published: July 2014
View articletitled, High-performance solar-blind ultraviolet photodetector based on mixed-phase ZnMgO thin film
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Journal Articles

Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors

H. Shen, C. X. Shan, B. H. Li, B. Xuan, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 232112 (2013)
https://doi.org/10.1063/1.4839495
Published: December 2013
View articletitled, Reliable self-powered highly spectrum-selective ZnO ultraviolet photodetectors
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Journal Articles

Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer

X. H. Xie, Z. Z. Zhang, B. H. Li, S. P. Wang, M. M. Jiang, C. X. Shan, D. X. Zhao, H. Y. Chen, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 231122 (2013)
https://doi.org/10.1063/1.4811153
Published: June 2013
View articletitled, Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer
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Journal Articles

Symmetry breaking induced anti-resonance in three dimensional sub-diffraction semiconducting grating

F. Cheng, B. H. Li, J. Han, H. Xiao, C. Z. Gu, X. G. Qiu
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 151113 (2013)
https://doi.org/10.1063/1.4802726
Published: April 2013
View articletitled, Symmetry breaking induced anti-resonance in three dimensional sub-diffraction semiconducting grating
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Journal Articles

ZnO light-emitting devices with a lifetime of 6.8 hours

J. S. Liu, C. X. Shan, H. Shen, B. H. Li, Z. Z. Zhang, L. Liu, L. G. Zhang, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 101, 011106 (2012)
https://doi.org/10.1063/1.4733298
Published: July 2012
View articletitled, ZnO light-emitting devices with a lifetime of 6.8 hours
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Journal Articles

Tuning asymmetry parameter of Fano resonance of spoof surface plasmons by modes coupling

F. Cheng, H. F. Liu, B. H. Li, J. Han, H. Xiao, X. F. Han, C. Z. Gu, X. G. Qiu
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 131110 (2012)
https://doi.org/10.1063/1.3698117
Published: March 2012
View articletitled, Tuning asymmetry parameter of Fano resonance of spoof surface plasmons by modes coupling
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Journal Articles

Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films

B. Y. Zhang, B. Yao, Y. F. Li, A. M. Liu, Z. Z. Zhang, B. H. Li, G. Z. Xing, T. Wu, X. B. Qin, D. X. Zhao, C. X. Shan, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 182503 (2011)
https://doi.org/10.1063/1.3657412
Published: October 2011
View articletitled, Evidence of cation vacancy induced room temperature ferromagnetism in Li-N codoped ZnO thin films
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Journal Articles

Magnetic properties and microstructure of L1-FePt/AlN perpendicular nanocomposite films

C. Feng, E. Zhang, C. C. Xu, N. Li, Y. Jiang, G. H. Yu, B. H. Li
Journal: Journal of Applied Physics
J. Appl. Phys. 110, 063910 (2011)
https://doi.org/10.1063/1.3639289
Published: September 2011
View articletitled, Magnetic properties and microstructure of L1-FePt/AlN perpendicular nanocomposite films
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Journal Articles

Deep-ultraviolet light-emitting device realized via a hole-multiplication process

H. Zhu, C. X. Shan, B. H. Li, Z. Z. Zhang, B. Yao, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 101110 (2011)
https://doi.org/10.1063/1.3637575
Published: September 2011
View articletitled, Deep-ultraviolet light-emitting device realized via a hole-multiplication process
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Journal Articles

Doping efficiency, optical and electrical properties of nitrogen-doped ZnO films

W. W. Liu, B. Yao, Z. Z. Zhang, Y. F. Li, B. H. Li, C. X. Shan, J. Y. Zhang, D. Z. Shen, X. W. Fan
Journal: Journal of Applied Physics
J. Appl. Phys. 109, 093518 (2011)
https://doi.org/10.1063/1.3579454
Published: May 2011
View articletitled, Doping efficiency, optical and electrical properties of nitrogen-doped ZnO films
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Journal Articles

High responsivity ultraviolet photodetector realized via a carrier-trapping process

J. S. Liu, C. X. Shan, B. H. Li, Z. Z. Zhang, C. L. Yang, D. Z. Shen, X. W. Fan
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 251102 (2010)
https://doi.org/10.1063/1.3527974
Published: December 2010
View articletitled, High responsivity ultraviolet photodetector realized via a carrier-trapping process
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Journal Articles

Investigation on the formation mechanism of p -type Li–N dual-doped ZnO

B. Y. Zhang, B. Yao, Y. F. Li, Z. Z. Zhang, B. H. Li, C. X. Shan, D. X. Zhao, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 222101 (2010)
https://doi.org/10.1063/1.3518059
Published: November 2010
View articletitled, Investigation on the formation mechanism of p -type Li–N dual-doped ZnO
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Journal Articles

Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices

L. K. Wang, Z. G. Ju, J. Y. Zhang, J. Zheng, D. Z. Shen, B. Yao, D. X. Zhao, Z. Z. Zhang, B. H. Li, C. X. Shan
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 131113 (2009)
https://doi.org/10.1063/1.3238571
Published: October 2009
View articletitled, Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices
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Journal Articles

Formation of stable and reproducible low resistivity and high carrier concentration p -type ZnO doped at high pressure with Sb

J. M. Qin, B. Yao, Y. Yan, J. Y. Zhang, X. P. Jia, Z. Z. Zhang, B. H. Li, C. X. Shan, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 022101 (2009)
https://doi.org/10.1063/1.3153515
Published: July 2009
View articletitled, Formation of stable and reproducible low resistivity and high carrier concentration p -type ZnO doped at high pressure with Sb
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Journal Articles

Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy

H. Zhu, C. X. Shan, B. H. Li, Z. Z. Zhang, J. Y. Zhang, B. Yao, D. Z. Shen, X. W. Fan
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 103508 (2009)
https://doi.org/10.1063/1.3126703
Published: May 2009
View articletitled, Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy
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Journal Articles

X-ray photoelectron spectroscopy measurement of n -ZnO / p -NiO heterostructure valence-band offset

R. Deng, B. Yao, Y. F. Li, Y. M. Zhao, B. H. Li, C. X. Shan, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, X. W. Fan
Journal: Applied Physics Letters
Appl. Phys. Lett. 94, 022108 (2009)
https://doi.org/10.1063/1.3072367
Published: January 2009
View articletitled, X-ray photoelectron spectroscopy measurement of n -ZnO / p -NiO heterostructure valence-band offset
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Journal Articles

The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification

F. Fang, D. X. Zhao, B. H. Li, Z. Z. Zhang, J. Y. Zhang, D. Z. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 233115 (2008)
https://doi.org/10.1063/1.3045952
Published: December 2008
View articletitled, The enhancement of ZnO nanowalls photoconductivity induced by CdS nanoparticle modification
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Journal Articles

Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study

Y. F. Li, B. Yao, Y. M. Lu, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, B. H. Li, D. Z. Shen, X. W. Fan, Z. K. Tang
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 083516 (2008)
https://doi.org/10.1063/1.3000601
Published: October 2008
View articletitled, Biaxial stress-dependent optical band gap, crystalline, and electronic structure in wurtzite ZnO: Experimental and ab initio study
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Journal Articles

Valence band offset of ZnO / Zn 0.85 Mg 0.15 O heterojunction measured by x-ray photoelectron spectroscopy

S. C. Su, Y. M. Lu, Z. Z. Zhang, C. X. Shan, B. H. Li, D. Z. Shen, B. Yao, J. Y. Zhang, D. X. Zhao, X. W. Fan
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 082108 (2008)
https://doi.org/10.1063/1.2977478
Published: August 2008
View articletitled, Valence band offset of ZnO / Zn 0.85 Mg 0.15 O heterojunction measured by x-ray photoelectron spectroscopy
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