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Journal Articles

Photoelectrical reading in ZnO/Si NCs/p-Si resistive switching devices

J. López-Vidrier, J. L. Frieiro, O. Blázquez, D. Yazicioglu, S. Gutsch, K. E. González-Flores, M. Zacharias, S. Hernández, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 116, 193503 (2020)
https://doi.org/10.1063/5.0005069
Published: May 2020
View article titled, Photoelectrical reading in ZnO/Si NCs/<em>p</em>-Si resistive switching devices
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Journal Articles

Light-activated electroforming in ITO/ZnO/p-Si resistive switching devices

O. Blázquez, J. L. Frieiro, J. López-Vidrier, C. Guillaume, X. Portier, C. Labbé, S. Hernández, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 115, 261104 (2019)
https://doi.org/10.1063/1.5125844
Published: December 2019
View article titled, Light-activated electroforming in ITO/ZnO/<em>p</em>-Si resistive switching devices
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Journal Articles

Silicon nanocrystals-based electroluminescent resistive switching device

Editor’s Pick
J. L. Frieiro, J. López-Vidrier, O. Blázquez, D. Yazıcıoğlu, S. Gutsch, J. Valenta, S. Hernández, M. Zacharias, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 144501 (2019)
https://doi.org/10.1063/1.5119299
Published: October 2019
View article titled, Silicon nanocrystals-based electroluminescent resistive switching device
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Journal Articles

Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

O. Blázquez, J. L. Frieiro, J. López-Vidrier, C. Guillaume, X. Portier, C. Labbé, P. Sanchis, S. Hernández, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 183502 (2018)
https://doi.org/10.1063/1.5046911
Published: October 2018
View article titled, Resistive switching and charge transport mechanisms in ITO/ZnO/<em>p</em>-Si devices
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Journal Articles

Mechanical oscillations in lasing microspheres

A. Toncelli, N. E. Capuj, B. Garrido, M. Sledzinska, C. M. Sotomayor-Torres, A. Tredicucci, D. Navarro-Urrios
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 053101 (2017)
https://doi.org/10.1063/1.4997182
Published: August 2017
View article titled, Mechanical oscillations in lasing microspheres
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Journal Articles

Modulation of the electroluminescence emission from ZnO/Si NCs/p-Si light-emitting devices via pulsed excitation

J. López-Vidrier, S. Gutsch, O. Blázquez, D. Hiller, J. Laube, R. Kaur, S. Hernández, B. Garrido, M. Zacharias
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 203104 (2017)
https://doi.org/10.1063/1.4983722
Published: May 2017
View article titled, Modulation of the electroluminescence emission from ZnO/Si NCs/<em>p</em>-Si light-emitting devices via pulsed excitation
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Journal Articles

Structural and optical properties of Al-Tb/SiO2 multilayers fabricated by electron beam evaporation

O. Blázquez, J. López-Vidrier, L. López-Conesa, M. Busquets-Masó, S. Estradé, F. Peiró, S. Hernández, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 135302 (2016)
https://doi.org/10.1063/1.4964110
Published: October 2016
View article titled, Structural and optical properties of Al-Tb/SiO<sub>2</sub> multilayers fabricated by electron beam evaporation
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Journal Articles

Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces

R. Pruna, F. Palacio, M. López, J. Pérez, M. Mir, O. Blázquez, S. Hernández, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 063109 (2016)
https://doi.org/10.1063/1.4960734
Published: August 2016
View article titled, Electrochemical characterization of organosilane-functionalized nanostructured ITO surfaces
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Journal Articles

Luminescence properties of Ce3+ and Tb3+ co-doped SiOxNy thin films: Prospects for color tunability in silicon-based hosts

J. M. Ramírez, A. Ruiz-Caridad, J. Wojcik, A. M. Gutierrez, S. Estradé, F. Peiró, P. Sanchís, P. Mascher, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 113108 (2016)
https://doi.org/10.1063/1.4944433
Published: March 2016
View article titled, Luminescence properties of Ce<sup>3+</sup> and Tb<sup>3+</sup> co-doped SiO<sub>x</sub>N<sub>y</sub> thin films: Prospects for color tunability in silicon-based hosts
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Journal Articles

Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides

D. Navarro-Urrios, J. M. Ramírez, N. E. Capuj, Y. Berencén, B. Garrido, A. Tredicucci
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 093103 (2015)
https://doi.org/10.1063/1.4929825
Published: September 2015
View article titled, Vertical coupling of laser glass microspheres to buried silicon nitride ellipses and waveguides
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Journal Articles

Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO2 superlattices

J. López-Vidrier, S. Hernández, D. Hiller, S. Gutsch, L. López-Conesa, S. Estradé, F. Peiró, M. Zacharias, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 133505 (2014)
https://doi.org/10.1063/1.4896878
Published: October 2014
View article titled, Annealing temperature and barrier thickness effect on the structural and optical properties of silicon nanocrystals/SiO<sub>2</sub> superlattices
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Journal Articles

The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

L. Rebohle, Y. Berencén, R. Wutzler, M. Braun, D. Hiller, J. M. Ramírez, B. Garrido, M. Helm, W. Skorupa
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 123104 (2014)
https://doi.org/10.1063/1.4896588
Published: September 2014
View article titled, The electroluminescence mechanism of Er<sup>3+</sup> in different silicon oxide and silicon nitride environments
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Journal Articles

Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

J. M. Ramírez, S. Cueff, Y. Berencén, C. Labbé, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 083103 (2014)
https://doi.org/10.1063/1.4893706
Published: August 2014
View article titled, Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 <em>μ</em>m
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Journal Articles

Determining the crystalline degree of silicon nanoclusters/SiO2 multilayers by Raman scattering

S. Hernández, J. López-Vidrier, L. López-Conesa, D. Hiller, S. Gutsch, J. Ibáñez, S. Estradé, F. Peiró, M. Zacharias, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 203504 (2014)
https://doi.org/10.1063/1.4878175
Published: May 2014
View article titled, Determining the crystalline degree of silicon nanoclusters/SiO<sub>2</sub> multilayers by Raman scattering
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Journal Articles

Absence of quantum confinement effects in the photoluminescence of Si3N4–embedded Si nanocrystals

D. Hiller, A. Zelenina, S. Gutsch, S. A. Dyakov, L. López-Conesa, J. López-Vidrier, S. Estradé, F. Peiró, B. Garrido, J. Valenta, M. Kořínek, F. Trojánek, P. Malý, M. Schnabel, C. Weiss, S. Janz, M. Zacharias
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 204301 (2014)
https://doi.org/10.1063/1.4878699
Published: May 2014
View article titled, Absence of quantum confinement effects in the photoluminescence of Si<sub>3</sub>N<sub>4</sub>–embedded Si nanocrystals
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Journal Articles

Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

S. Hernández, P. Miska, M. Grün, S. Estradé, F. Peiró, B. Garrido, M. Vergnat, P. Pellegrino
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 233101 (2013)
https://doi.org/10.1063/1.4847536
Published: December 2013
View article titled, Tailoring the surface density of silicon nanocrystals embedded in SiO<sub>x</sub> single layers
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Journal Articles

Structural and optical properties of size controlled Si nanocrystals in Si3N4 matrix: The nature of photoluminescence peak shift

A. Zelenina, S. A. Dyakov, D. Hiller, S. Gutsch, V. Trouillet, M. Bruns, S. Mirabella, P. Löper, L. López-Conesa, J. López-Vidrier, S. Estradé, F. Peiró, B. Garrido, J. Bläsing, A. Krost, D. M. Zhigunov, M. Zacharias
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 184311 (2013)
https://doi.org/10.1063/1.4830026
Published: November 2013
View article titled, Structural and optical properties of size controlled Si nanocrystals in Si<sub>3</sub>N<sub>4</sub> matrix: The nature of photoluminescence peak shift
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Includes: Supplementary data
Journal Articles

Charge transport and electroluminescence of silicon nanocrystals/SiO2 superlattices

J. López-Vidrier, Y. Berencén, S. Hernández, O. Blázquez, S. Gutsch, J. Laube, D. Hiller, P. Löper, M. Schnabel, S. Janz, M. Zacharias, B. Garrido
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 163701 (2013)
https://doi.org/10.1063/1.4826898
Published: October 2013
View article titled, Charge transport and electroluminescence of silicon nanocrystals/SiO<sub>2</sub> superlattices
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Journal Articles

Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

Y. Berencén, R. Wutzler, L. Rebohle, D. Hiller, J. M. Ramírez, J. A. Rodríguez, W. Skorupa, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 111102 (2013)
https://doi.org/10.1063/1.4820836
Published: September 2013
View article titled, Intense green-yellow electroluminescence from Tb<sup>+</sup>-implanted silicon-rich silicon nitride/oxide light emitting devices
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Journal Articles

Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices

J. M. Ramírez, Y. Berencén, L. López-Conesa, J. M. Rebled, F. Peiró, B. Garrido
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 081102 (2013)
https://doi.org/10.1063/1.4818758
Published: August 2013
View article titled, Carrier transport and electroluminescence efficiency of erbium-doped silicon nanocrystal superlattices
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