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B. G. Svensson
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Journal Articles

Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures

M. E. Ingebrigtsen, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, L. Vines
Journal: Journal of Applied Physics
J. Appl. Phys. 125, 185706 (2019)
https://doi.org/10.1063/1.5088655
Published: May 2019
View article titled, Generation and metastability of deep level states in β-Ga<sub>2</sub>O<sub>3</sub> exposed to reverse bias at elevated temperatures
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Journal Articles

The interaction between lithium acceptors and gallium donors in zinc oxide

T. N. Sky, K. M. Johansen, Y. K. Frodason, B. G. Svensson, L. Vines
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 245702 (2018)
https://doi.org/10.1063/1.5063326
Published: December 2018
View article titled, The interaction between lithium acceptors and gallium donors in zinc oxide
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Journal Articles

Impact of proton irradiation on conductivity and deep level defects in β -Ga2O3

Editor’s Pick
M. E. Ingebrigtsen, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, A. Perron, L. Vines, J. B. Varley
Journal: APL Materials
APL Mater. 7, 022510 (2019)
https://doi.org/10.1063/1.5054826
Published: December 2018
View article titled, Impact of proton irradiation on conductivity and deep level defects in β -Ga<sub>2</sub>O<sub>3</sub>
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Includes: Supplementary data
Journal Articles

Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics

I. L. Kolevatov, B. G. Svensson, E. V. Monakhov
Journal: Journal of Applied Physics
J. Appl. Phys. 124, 085706 (2018)
https://doi.org/10.1063/1.5037310
Published: August 2018
View article titled, Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics
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Journal Articles

Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

T. N. Sky, K. M. Johansen, H. N. Riise, B. G. Svensson, L. Vines
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 055701 (2018)
https://doi.org/10.1063/1.5000123
Published: February 2018
View article titled, Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism
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Journal Articles

Iron and intrinsic deep level states in Ga2O3

M. E. Ingebrigtsen, J. B. Varley, A. Yu. Kuznetsov, B. G. Svensson, G. Alfieri, A. Mihaila, U. Badstübner, L. Vines
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 042104 (2018)
https://doi.org/10.1063/1.5020134
Published: January 2018
View article titled, Iron and intrinsic deep level states in Ga<sub>2</sub>O<sub>3</sub>
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Journal Articles

Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2

C. Zimmermann, J. Bonkerud, F. Herklotz, T. N. Sky, A. Hupfer, E. Monakhov, B. G. Svensson, L. Vines
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 161572 (2018)
https://doi.org/10.1063/1.5011136
Published: January 2018
View article titled, Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO<sub>2</sub>
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Journal Articles

Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect

H. M. Ayedh, R. Nipoti, A. Hallén, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 122, 025701 (2017)
https://doi.org/10.1063/1.4991815
Published: July 2017
View article titled, Thermodynamic equilibration of the carbon vacancy in 4H-SiC: A lifetime limiting defect
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Journal Articles

Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering

R. Schifano, H. N. Riise, J. Z. Domagala, A. Yu. Azarov, R. Ratajczak, E. V. Monakhov, V. Venkatachalapathy, L. Vines, K. S. Chan, J. Wong-Leung, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 121, 015304 (2017)
https://doi.org/10.1063/1.4973342
Published: January 2017
View article titled, Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering
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Journal Articles

Zn precipitation and Li depletion in Zn implanted ZnO

K. S. Chan, L. Vines, L. Li, C. Jagadish, B. G. Svensson, J. Wong-Leung
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 022102 (2016)
https://doi.org/10.1063/1.4958693
Published: July 2016
View article titled, Zn precipitation and Li depletion in Zn implanted ZnO
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Includes: Supplementary data
Journal Articles

The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures

P. F. Lindberg, F. Lipp Bregolin, K. Wiesenhütter, U. Wiesenhütter, H. N. Riise, L. Vines, S. Prucnal, W. Skorupa, B. G. Svensson, E. V. Monakhov
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 185305 (2016)
https://doi.org/10.1063/1.4948666
Published: May 2016
View article titled, The effect of millisecond flash lamp annealing on electrical and structural properties of ZnO:Al/Si structures
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Journal Articles

Formation and annihilation of E4 centers in ZnO: Influence of hydrogen

A. Hupfer, C. Bhoodoo, L. Vines, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 181506 (2016)
https://doi.org/10.1063/1.4948241
Published: May 2016
View article titled, Formation and annihilation of E4 centers in ZnO: Influence of hydrogen
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Journal Articles

Structural properties of Cu2O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering

J. Gan, S. Gorantla, H. N. Riise, Ø. S. Fjellvåg, S. Diplas, O. M. Løvvik, B. G. Svensson, E. V. Monakhov, A. E. Gunnæs
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 152110 (2016)
https://doi.org/10.1063/1.4945985
Published: April 2016
View article titled, Structural properties of Cu<sub>2</sub>O epitaxial films grown on c-axis single crystal ZnO by magnetron sputtering
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Journal Articles

Thermal stability of the prominent compensating (AlZn–VZn) center in ZnO

J. E. Stehr, W. M. Chen, B. G. Svensson, I. A. Buyanova
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 105702 (2016)
https://doi.org/10.1063/1.4943263
Published: March 2016
View article titled, Thermal stability of the prominent compensating (Al<sub>Zn</sub>–V<sub>Zn</sub>) center in ZnO
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Journal Articles

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

H. M. Ayedh, R. Nipoti, A. Hallén, B. G. Svensson
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 252102 (2015)
https://doi.org/10.1063/1.4938242
Published: December 2015
View article titled, Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures
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Journal Articles

Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

H. M. Ayedh, A. Hallén, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 175701 (2015)
https://doi.org/10.1063/1.4934947
Published: November 2015
View article titled, Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species
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Journal Articles

Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment

V. Quemener, B. Raeissi, F. Herklotz, L. I. Murin, E. V. Monakhov, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 118, 135703 (2015)
https://doi.org/10.1063/1.4932019
Published: October 2015
View article titled, Kinetics study of the evolution of oxygen-related defects in mono-crystalline silicon subjected to electron-irradiation and thermal treatment
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Journal Articles

Equilibrium shape of nano-cavities in H implanted ZnO

K. S. Chan, L. Vines, L. Li, C. Jagadish, B. G. Svensson, J. Wong-Leung
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 212102 (2015)
https://doi.org/10.1063/1.4921788
Published: May 2015
View article titled, Equilibrium shape of nano-cavities in H implanted ZnO
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Journal Articles

Formation kinetics of trivacancy-oxygen pairs in silicon

N. Ganagona, L. Vines, E. V. Monakhov, B. G. Svensson
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 124510 (2014)
https://doi.org/10.1063/1.4896066
Published: September 2014
View article titled, Formation kinetics of trivacancy-oxygen pairs in silicon
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Journal Articles

The E3 center in zinc oxide: Evidence for involvement of hydrogen

A. Hupfer, C. Bhoodoo, L. Vines, B. G. Svensson
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 092111 (2014)
https://doi.org/10.1063/1.4867908
Published: March 2014
View article titled, The E3 center in zinc oxide: Evidence for involvement of hydrogen
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