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B. De Jaeger
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Journal Articles

On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors

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B. Bakeroot, S. You, T.-L. Wu, J. Hu, M. Van Hove, B. De Jaeger, K. Geens, S. Stoffels, S. Decoutere
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 134506 (2014)
https://doi.org/10.1063/1.4896900
Published: October 2014
View articletitled, On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron mobility transistors
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Journal Articles

Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors

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J. Franco, G. Eneman, B. Kaczer, J. Mitard, B. De Jaeger, G. Groeseneken
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 29, 01A804 (2011)
https://doi.org/10.1116/1.3520647
Published: January 2011
View articletitled, Impact of halo implant on the hot carrier reliability of germanium p -channel metal-oxide-semiconductor field-effect transitors
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Journal Articles

Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation

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Koen Martens, R. Rooyackers, A. Firrincieli, B. Vincent, R. Loo, B. De Jaeger, M. Meuris, P. Favia, H. Bender, B. Douhard, W. Vandervorst, E. Simoen, M. Jurczak, D. J. Wouters, J. A. Kittl
Journal: Applied Physics Letters
Appl. Phys. Lett. 98, 013504 (2011)
https://doi.org/10.1063/1.3530437
Published: January 2011
View articletitled, Contact resistivity and Fermi-level pinning in n-type Ge contacts with epitaxial Si-passivation
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Journal Articles

Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs

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E. Simoen, A. Firrincieli, F. E. Leys, R. Loo, B. De Jaeger, J. Mitard, C. Claeys
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1129, 281–284 (2009)
https://doi.org/10.1063/1.3140451
Published: April 2009
View articletitled, Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si‐Passivated Ge‐on‐Si pMOSFETs
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Journal Articles

Threshold voltage shifts in Si passivated (100)Ge p -channel field effect transistors: Insights from first-principles modeling

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G. Pourtois, M. Houssa, B. De Jaeger, B. Kaczer, F. Leys, M. Meuris, M. Caymax, G. Groeseneken, M. M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 023506 (2007)
https://doi.org/10.1063/1.2756367
Published: July 2007
View articletitled, Threshold voltage shifts in Si passivated (100)Ge p -channel field effect transistors: Insights from first-principles modeling
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Journal Articles

Effect of hafnium germanate formation on the interface of Hf O 2 /germanium metal oxide semiconductor devices

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S. Van Elshocht, M. Caymax, T. Conard, S. De Gendt, I. Hoflijk, M. Houssa, B. De Jaeger, J. Van Steenbergen, M. Heyns, M. Meuris
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 141904 (2006)
https://doi.org/10.1063/1.2192576
Published: April 2006
View articletitled, Effect of hafnium germanate formation on the interface of Hf O 2 /germanium metal oxide semiconductor devices
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Journal Articles

P implantation doping of Ge: Diffusion, activation, and recrystallization

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A. Satta, T. Janssens, T. Clarysse, E. Simoen, M. Meuris, A. Benedetti, I. Hoflijk, B. De Jaeger, C. Demeurisse, W. Vandervorst
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 24, 494–498 (2006)
https://doi.org/10.1116/1.2162565
Published: January 2006
View articletitled, P implantation doping of Ge: Diffusion, activation, and recrystallization
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Journal Articles

Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium

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A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, W. Vandervorst
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 172109 (2005)
https://doi.org/10.1063/1.2117631
Published: October 2005
View articletitled, Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium
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Journal Articles

Deposition of HfO 2 on germanium and the impact of surface pretreatments

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S. Van Elshocht, B. Brijs, M. Caymax, T. Conard, T. Chiarella, S. De Gendt, B. De Jaeger, S. Kubicek, M. Meuris, B. Onsia, O. Richard, I. Teerlinck, J. Van Steenbergen, C. Zhao, M. Heyns
Journal: Applied Physics Letters
Appl. Phys. Lett. 85, 3824–3826 (2004)
https://doi.org/10.1063/1.1810642
Published: October 2004
View articletitled, Deposition of HfO 2 on germanium and the impact of surface pretreatments
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