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Journal Articles

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

J. Cardoso, N. Ben Sedrine, A. Alves, M. A. Martins, M. Belloeil, B. Daudin, D. Nd. Faye, E. Alves, K. Lorenz, A. J. Neves, M. R. Correia, T. Monteiro
Journal: Applied Physics Letters
Appl. Phys. Lett. 113, 201905 (2018)
https://doi.org/10.1063/1.5048772
Published: November 2018
View article titled, Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
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Includes: Supplementary data
Journal Articles

A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures

L. H. G. Tizei, S. Meuret, K. March, K. Hestroffer, T. Auzelle, B. Daudin, M. Kociak
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 143106 (2014)
https://doi.org/10.1063/1.4897408
Published: October 2014
View article titled, A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures
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Journal Articles

Anisotropic In distribution in InGaN core-shell nanowires

C. Leclere, N. A. Katcho, G. Tourbot, B. Daudin, M. G. Proietti, H. Renevier
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 013517 (2014)
https://doi.org/10.1063/1.4886756
Published: July 2014
View article titled, Anisotropic In distribution in InGaN core-shell nanowires
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Journal Articles

Size and shape effects in the Raman scattering by single GaN nanowires

J. Wang, F. Demangeot, R. Péchou, C. Bayon, A. Mlayah, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 223506 (2013)
https://doi.org/10.1063/1.4839975
Published: December 2013
View article titled, Size and shape effects in the Raman scattering by single GaN nanowires
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Journal Articles

Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes

A. Cros, R. Mata, K. Hestroffer, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 143109 (2013)
https://doi.org/10.1063/1.4801779
Published: April 2013
View article titled, Ultraviolet Raman spectroscopy of GaN/AlN core-shell nanowires: Core, shell, and interface modes
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Journal Articles

Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires

D. Sam-Giao, R. Mata, G. Tourbot, J. Renard, A. Wysmolek, B. Daudin, B. Gayral
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 043102 (2013)
https://doi.org/10.1063/1.4775492
Published: January 2013
View article titled, Fine optical spectroscopy of the 3.45 eV emission line in GaN nanowires
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Journal Articles

Strain assisted inter-diffusion in GaN/AlN quantum dots

C. Leclere, V. Fellmann, C. Bougerol, D. Cooper, B. Gayral, M. G. Proietti, H. Renevier, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 034311 (2013)
https://doi.org/10.1063/1.4775587
Published: January 2013
View article titled, Strain assisted inter-diffusion in GaN/AlN quantum dots
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Journal Articles

In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy

K. Hestroffer, C. Leclere, V. Cantelli, C. Bougerol, H. Renevier, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 212107 (2012)
https://doi.org/10.1063/1.4721521
Published: May 2012
View article titled, <em>In situ</em> study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy
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Journal Articles

Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation

S. Magalhães, M. Peres, V. Fellmann, B. Daudin, A. J. Neves, E. Alves, T. Monteiro, K. Lorenz
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 084306 (2010)
https://doi.org/10.1063/1.3496624
Published: October 2010
View article titled, Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation
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Journal Articles

Optical spectroscopy of cubic GaN in nanowires

J. Renard, G. Tourbot, D. Sam-Giao, C. Bougerol, B. Daudin, B. Gayral
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 081910 (2010)
https://doi.org/10.1063/1.3478004
Published: August 2010
View article titled, Optical spectroscopy of cubic GaN in nanowires
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Journal Articles

Visualization of Tm dopant atoms diffused out of GaN quantum dots

H. Okuno, J.-L. Rouvière, P.-H. Jouneau, P. Bayle-Guillemaud, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 251908 (2010)
https://doi.org/10.1063/1.3455893
Published: June 2010
View article titled, Visualization of Tm dopant atoms diffused out of GaN quantum dots
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Journal Articles

Molecular beam epitaxy growth and optical properties of AlN nanowires

O. Landré, V. Fellmann, P. Jaffrennou, C. Bougerol, H. Renevier, A. Cros, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 061912 (2010)
https://doi.org/10.1063/1.3315943
Published: February 2010
View article titled, Molecular beam epitaxy growth and optical properties of AlN nanowires
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Journal Articles

Optically active centers in Eu implanted, Eu in situ doped GaN, and Eu doped GaN quantum dots

L. Bodiou, A. Braud, J.-L. Doualan, R. Moncorgé, J. H. Park, C. Munasinghe, A. J. Steckl, K. Lorenz, E. Alves, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 043104 (2009)
https://doi.org/10.1063/1.3078783
Published: February 2009
View article titled, Optically active centers in Eu implanted, Eu <em>in situ</em> doped GaN, and Eu doped GaN quantum dots
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Journal Articles

Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion

O. Landré, R. Songmuang, J. Renard, E. Bellet-Amalric, H. Renevier, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 183109 (2008)
https://doi.org/10.1063/1.3013840
Published: November 2008
View article titled, Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
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Journal Articles

Anisotropic strain state of the [ 1 1 ¯ 00 ] GaN quantum dots and quantum wires

B. Amstatt, O. Landré, V. Favre Nicolin, M. G. Proietti, E. Bellet-Amalric, C. Bougerol, H. Renevier, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 063521 (2008)
https://doi.org/10.1063/1.2979324
Published: September 2008
View article titled, Anisotropic strain state of the [ 1 1 ¯ 00 ] GaN quantum dots and quantum wires
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Journal Articles

From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer

R. Songmuang, O. Landré, B. Daudin
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 251902 (2007)
https://doi.org/10.1063/1.2817941
Published: December 2007
View article titled, From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
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Journal Articles

Growth of m -plane GaN quantum wires and quantum dots on m -plane 6H-SiC

B. Amstatt, J. Renard, C. Bougerol, E. Bellet-Amalric, B. Gayral, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 074913 (2007)
https://doi.org/10.1063/1.2786050
Published: October 2007
View article titled, Growth of m -plane GaN quantum wires and quantum dots on m -plane 6H-SiC
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Journal Articles

Anisotropic morphology of nonpolar a -plane GaN quantum dots and quantum wells

S. Founta, C. Bougerol, H. Mariette, B. Daudin, P. Vennéguès
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 074304 (2007)
https://doi.org/10.1063/1.2781569
Published: October 2007
View article titled, Anisotropic morphology of nonpolar a -plane GaN quantum dots and quantum wells
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Journal Articles

GaN quantum dots grown on Al x Ga 1 − x N layer by plasma-assisted molecular beam epitaxy

Y. Hori, O. Oda, E. Bellet-Amalric, B. Daudin
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 024311 (2007)
https://doi.org/10.1063/1.2759168
Published: July 2007
View article titled, GaN quantum dots grown on Al x Ga 1 − x N layer by plasma-assisted molecular beam epitaxy
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Journal Articles

Anisotropic strain relaxation in a -plane GaN quantum dots

S. Founta, J. Coraux, D. Jalabert, C. Bougerol, F. Rol, H. Mariette, H. Renevier, B. Daudin, R. A. Oliver, C. J. Humphreys, T. C. Q. Noakes, P. Bailey
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 063541 (2007)
https://doi.org/10.1063/1.2713937
Published: March 2007
View article titled, Anisotropic strain relaxation in a -plane GaN quantum dots
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