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Journal Articles

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

B. Damilano, R. Aristégui, H. Teisseyre, S. Vézian, V. Guigoz, A. Courville, I. Florea, P. Vennéguès, M. Bockowski, T. Guillet, M. Vladimirova

J. Appl. Phys. 135, 095702 (2024)

https://doi.org/10.1063/5.0182659

Published: March 2024

View article titled, Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

Journal Articles

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

P. Vennéguès, L. Largeau, V. Brändli, B. Damilano, K. Tavernier, R. Bernard, A. Courville, S. Rennesson, F. Semond, G. Feuillet, C. Cornet

J. Appl. Phys. 132, 165102 (2022)

https://doi.org/10.1063/5.0111558

Published: October 2022

View article titled, On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Includes: Supplementary data

Journal Articles

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

B. Damilano, S. Vézian, M. P. Chauvat, P. Ruterana, N. Amador-Mendez, S. Collin, M. Tchernycheva, P. Valvin, B. Gil

J. Appl. Phys. 132, 035302 (2022)

https://doi.org/10.1063/5.0089892

Published: July 2022

View article titled, Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Journal Articles

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

D. Cooper, V. Fan Arcara, B. Damilano, L. Amichi, A. Mavel, N. Rochat, G. Feuillet, A. Courville, S. Vézian, J. Y. Duboz

J. Appl. Phys. 130, 025704 (2021)

https://doi.org/10.1063/5.0054810

Published: July 2021

View article titled, Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Journal Articles

Full InGaN red light emitting diodes

A. Dussaigne, F. Barbier, B. Damilano, S. Chenot, A. Grenier, A. M. Papon, B. Samuel, B. Ben Bakir, D. Vaufrey, J. C. Pillet, A. Gasse, O. Ledoux, M. Rozhavskaya, D. Sotta

J. Appl. Phys. 128, 135704 (2020)

https://doi.org/10.1063/5.0016217

Published: October 2020

View article titled, Full InGaN red light emitting diodes

Journal Articles

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

L. Konczewicz, S. Juillaguet, E. Litwin-Staszewska, R. Piotrzkowski, H. Peyre, S. Matta, M. Al Khalfioui, M. Leroux, B. Damilano, J. Brault, S. Contreras

J. Appl. Phys. 128, 085703 (2020)

https://doi.org/10.1063/1.5140561

Published: August 2020

View article titled, High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Journal Articles

Lasing up to 380 K in a sublimated GaN nanowire

S. Sergent, B. Damilano, S. Vézian, S. Chenot, T. Tsuchizawa, M. Notomi

Appl. Phys. Lett. 116, 223101 (2020)

https://doi.org/10.1063/5.0004771

Published: June 2020

View article titled, Lasing up to 380 K in a sublimated GaN nanowire

Includes: Supplementary data

Journal Articles

Ge doped GaN and Al_0.5Ga_0.5N-based tunnel junctions on top of visible and UV light emitting diodes

V. Fan Arcara, B. Damilano, G. Feuillet, S. Vézian, K. Ayadi, S. Chenot, J.-Y. Duboz

J. Appl. Phys. 126, 224503 (2019)

https://doi.org/10.1063/1.5121379

Published: December 2019

View article titled, Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Journal Articles

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

J. Brault, S. Matta, T.-H. Ngo, M. Al Khalfioui, P. Valvin, M. Leroux, B. Damilano, M. Korytov, V. Brändli, P. Vennéguès, J. Massies, B. Gil

J. Appl. Phys. 126, 205701 (2019)

https://doi.org/10.1063/1.5115593

Published: November 2019

View article titled, Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

Journal Articles

(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

V. Fan Arcara, B. Damilano, G. Feuillet, A. Courville, S. Chenot, J.-Y. Duboz

AIP Advances 9, 055101 (2019)

https://doi.org/10.1063/1.5092693

Published: May 2019

View article titled, (Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

Journal Articles

Influence of the heterostructure design on the optical properties of GaN and Al_0.1Ga_0.9N quantum dots for ultraviolet emission

S. Matta, J. Brault, T. H. Ngo, B. Damilano, M. Korytov, P. Vennéguès, M. Nemoz, J. Massies, M. Leroux, B. Gil

J. Appl. Phys. 122, 085706 (2017)

https://doi.org/10.1063/1.5000238

Published: August 2017

View article titled, Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission

Journal Articles

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, T. Guillet

Appl. Phys. Lett. 109, 231101 (2016)

https://doi.org/10.1063/1.4971357

Published: December 2016

View article titled, III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Journal Articles

Formation of GaN quantum dots by molecular beam epitaxy using NH₃ as nitrogen source

B. Damilano, J. Brault, J. Massies

J. Appl. Phys. 118, 024304 (2015)

https://doi.org/10.1063/1.4923425

Published: July 2015

View article titled, Formation of GaN quantum dots by molecular beam epitaxy using NH3 as nitrogen source

Journal Articles

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

K. Lekhal, B. Damilano, H. T. Ngo, D. Rosales, P. De Mierry, S. Hussain, P. Vennéguès, B. Gil

Appl. Phys. Lett. 106, 142101 (2015)

https://doi.org/10.1063/1.4917222

Published: April 2015

View article titled, Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Journal Articles

Highly resistive epitaxial Mg-doped GdN thin films

C.-M. Lee, H. Warring, S. Vézian, B. Damilano, S. Granville, M. Al Khalfioui, Y. Cordier, H. J. Trodahl, B. J. Ruck, F. Natali

Appl. Phys. Lett. 106, 022401 (2015)

https://doi.org/10.1063/1.4905598

Published: January 2015

View article titled, Highly resistive epitaxial Mg-doped GdN thin films

Journal Articles

Stark effect in ensembles of polar (0001) Al_0.5Ga_0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

M. Leroux, J. Brault, A. Kahouli, D. Maghraoui, B. Damilano, P. de Mierry, M. Korytov, Je-Hyung Kim, Yong-Hoon Cho

J. Appl. Phys. 116, 034308 (2014)

https://doi.org/10.1063/1.4889922

Published: July 2014

View article titled, Stark effect in ensembles of polar (0001) Al0.5Ga0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

Journal Articles

Built-in electric field in ZnO based semipolar quantum wells grown on ( 10 1 ¯ 2 ) ZnO substrates

J.-M. Chauveau, Y. Xia, I. Ben Taazaet-Belgacem, M. Teisseire, B. Roland, M. Nemoz, J. Brault, B. Damilano, M. Leroux, B. Vinter

Appl. Phys. Lett. 103, 262104 (2013)

https://doi.org/10.1063/1.4851116

Published: December 2013

View article titled, Built-in electric field in ZnO based semipolar quantum wells grown on ( 10 1 ¯ 2 ) ZnO substrates

Journal Articles

Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al 0.5 Ga 0.5 N / GaN quantum dots

J. Brault, A. Kahouli, M. Leroux, B. Damilano, D. Elmaghraoui, P. Vennéguès, T. Guillet, C. Brimont

AIP Conf. Proc. 1566, 73–74 (2013)

https://doi.org/10.1063/1.4848291

Published: December 2013

View article titled, Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al 0.5 Ga 0.5 N / GaN quantum dots

Journal Articles

Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped Al_xGa_1−xN films using infrared spectroscopy

N. Rahbany, M. Kazan, M. Tabbal, R. Tauk, J. Jabbour, J. Brault, B. Damilano, J. Massies

J. Appl. Phys. 114, 053505 (2013)

https://doi.org/10.1063/1.4817172

Published: August 2013

View article titled, Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped AlxGa1−xN films using infrared spectroscopy

Journal Articles

Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

D. H. Rich, O. Moshe, B. Damilano, J. Massies

AIP Conf. Proc. 1399, 453–454 (2011)

https://doi.org/10.1063/1.3666449

Published: December 2011

View article titled, Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

NARROW

Topics

Molecular beam epitaxy of GaN/AlGaN quantum wells on bulk GaN substrate in the step-flow or step meandering regime: Influence on indirect exciton diffusion

On the origin of twist in 3D nucleation islands of tetrahedrally coordinated semiconductors heteroepitaxially grown along hexagonal orientations

Preferential sublimation along threading dislocations in InGaN/GaN single quantum well for improved photoluminescence

Mapping of the electrostatic potentials in MOCVD and hybrid GaN tunnel junctions for InGaN/GaN blue emitting light emitting diodes by off-axis electron holography correlated with structural, chemical, and optoelectronic characterization

Full InGaN red light emitting diodes

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Lasing up to 380 K in a sublimated GaN nanowire

Ge doped GaN and Al_0.5Ga_0.5N-based tunnel junctions on top of visible and UV light emitting diodes

Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges

(Ga,In)N/GaN light emitting diodes with a tunnel junction and a rough n-contact layer grown by metalorganic chemical vapor deposition

Influence of the heterostructure design on the optical properties of GaN and Al_0.1Ga_0.9N quantum dots for ultraviolet emission

III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet

Formation of GaN quantum dots by molecular beam epitaxy using NH₃ as nitrogen source

Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission

Highly resistive epitaxial Mg-doped GdN thin films

Stark effect in ensembles of polar (0001) Al_0.5Ga_0.5N/GaN quantum dots and comparison with semipolar (11−22) ones

Built-in electric field in ZnO based semipolar quantum wells grown on ( 10 1 ¯ 2 ) ZnO substrates

Built-in electric field and radiative efficiency of polar (0001) and semipolar (11–22) Al 0.5 Ga 0.5 N / GaN quantum dots

Measurement of the effect of plasmon gas oscillation on the dielectric properties of p- and n-doped Al_xGa_1−xN films using infrared spectroscopy

Excitation‐dependent Polarized Emission from GaN/AlN Quantum Dot Ensembles under In‐plane Uniaxial Stresses

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