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Journal Articles

Characterization of out-of-plane transport properties of Sm_0.2Ce_0.8O_2−δ in all-thin-film hetero-epitaxial structures

Yangang Liang, Xiaohang Zhang, Yaoyu Ren, Chris J. Kucharczyk, Ruiyun Huang, Seunghun Lee, H. M. I. Jaim, Haiyan Tan, Huairuo Zhang, Eric J. Marksz, Leonid A. Bendersky, Albert V. Davydov, Sossina M. Haile, Ichiro Takeuchi

AIP Advances 15, 065012 (2025)

https://doi.org/10.1063/5.0272589

Published: June 2025

View articletitled, Characterization of out-of-plane transport properties of Sm0.2Ce0.8O2−δ in all-thin-film hetero-epitaxial structures

Journal Articles

The growth of self-intercalated Nb_1+xSe₂ by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

Peter M. Litwin, Samantha T. Jaszewski, Wendy L. Sarney, Asher C. Leff, Sergiy Krylyuk, Albert V. Davydov, Jon F. Ihlefeld, Stephen J. McDonnell

J. Vac. Sci. Technol. A 41, 042707 (2023)

https://doi.org/10.1116/6.0002593

Published: June 2023

View articletitled, The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

Includes: Supplementary data

Journal Articles

Elemental excitations in MoI₃ one-dimensional van der Waals nanowires

Fariborz Kargar, Zahra Barani, Nicholas R. Sesing, Thuc T. Mai, Topojit Debnath, Huairuo Zhang, Yuhang Liu, Yanbing Zhu, Subhajit Ghosh, Adam J. Biacchi, Felipe H. da Jornada, Ludwig Bartels, Tehseen Adel, Angela R. Hight Walker, Albert V. Davydov, Tina T. Salguero, Roger K. Lake, Alexander A. Balandin

Appl. Phys. Lett. 121, 221901 (2022)

https://doi.org/10.1063/5.0129904

Published: November 2022

View articletitled, Elemental excitations in MoI3 one-dimensional van der Waals nanowires

Includes: Supplementary data

Journal Articles

Phase transition of Al₂O₃-encapsulated MoTe₂ via rapid thermal annealing

Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert V. Davydov, Spyridon Pavlidis

Appl. Phys. Lett. 121, 033101 (2022)

https://doi.org/10.1063/5.0097844

Published: July 2022

View articletitled, Phase transition of Al2O3-encapsulated MoTe2 via rapid thermal annealing

Journal Articles

Low barrier height in a ZnO nanorods/NbSe₂ heterostructure prepared by van der Waals epitaxy

Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert V. Davydov, Young Joon Hong, Jinkyoung Yoo

APL Mater. 9, 091107 (2021)

https://doi.org/10.1063/5.0052596

Published: September 2021

View articletitled, Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

Includes: Supplementary data

Journal Articles

MoS₂ thin films from a (N^tBu)₂(NMe₂)₂Mo and 1-propanethiol atomic layer deposition process

Berc Kalanyan, Ryan Beams, Michael B. Katz, Albert V. Davydov, James E. Maslar, Ravindra K. Kanjolia

J. Vac. Sci. Technol. A 37, 010901 (2019)

https://doi.org/10.1116/1.5059424

Published: December 2018

View articletitled, MoS2 thin films from a (NtBu)2(NMe2)2Mo and 1-propanethiol atomic layer deposition process

Includes: Supplementary data

Journal Articles

Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS₂ on GaN

Terrance P. O'Regan, Dmitry Ruzmetov, Mahesh R. Neupane, Robert A. Burke, Andrew A. Herzing, Kehao Zhang, A. Glen Birdwell, DeCarlos E. Taylor, Edward F. C. Byrd, Scott D. Walck, Albert V. Davydov, Joshua A. Robinson, Tony G. Ivanov

Appl. Phys. Lett. 111, 051602 (2017)

https://doi.org/10.1063/1.4997188

Published: August 2017

View articletitled, Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN

Journal Articles

Phonon anharmonicity in bulk T_d-MoTe₂

Jaydeep Joshi, Iris R. Stone, Ryan Beams, Sergiy Krylyuk, Irina Kalish, Albert V. Davydov, Patrick M. Vora

Appl. Phys. Lett. 109, 031903 (2016)

https://doi.org/10.1063/1.4959099

Published: July 2016

View articletitled, Phonon anharmonicity in bulk Td-MoTe2

Includes: Supplementary data

Journal Articles

Transfer characteristics and low-frequency noise in single- and multi-layer MoS₂ field-effect transistors

Deepak Sharma, Abhishek Motayed, Pankaj B. Shah, Matin Amani, Mariela Georgieva, A. Glen Birdwell, Madan Dubey, Qiliang Li, Albert V. Davydov

Appl. Phys. Lett. 107, 162102 (2015)

https://doi.org/10.1063/1.4932945

Published: October 2015

View articletitled, Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors

Includes: Supplementary data

Journal Articles

Al₂O₃ as a suitable substrate and a dielectric layer for n-layer MoS₂

Arunima K. Singh, Richard G. Hennig, Albert V. Davydov, Francesca Tavazza

Appl. Phys. Lett. 107, 053106 (2015)

https://doi.org/10.1063/1.4928179

Published: August 2015

View articletitled, Al2O3 as a suitable substrate and a dielectric layer for n-layer MoS2

Includes: Supplementary data

Journal Articles

Faceting control in core-shell GaN micropillars using selective epitaxy

Sergiy Krylyuk, Ratan Debnath, Heayoung P. Yoon, Matthew R. King, Jong-Yoon Ha, Baomei Wen, Abhishek Motayed, Albert V. Davydov

APL Mater. 2, 106104 (2014)

https://doi.org/10.1063/1.4899296

Published: October 2014

View articletitled, Faceting control in core-shell GaN micropillars using selective epitaxy

Includes: Supplementary data

Journal Articles

Top-down fabrication of large-area GaN micro- and nanopillars

Ratan Debnath, Jong-Yoon Ha, Baomei Wen, Dipak Paramanik, Abhishek Motayed, Matthew R. King, Albert V. Davydov

J. Vac. Sci. Technol. B 32, 021204 (2014)

https://doi.org/10.1116/1.4865908

Published: February 2014

View articletitled, Top-down fabrication of large-area GaN micro- and nanopillars

Journal Articles

Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Sergiy Krylyuk, Dipak Paramanik, Matt King, Abhishek Motayed, Jong-Yoon Ha, John E. Bonevich, Alec Talin, Albert V. Davydov

Appl. Phys. Lett. 101, 241119 (2012)

https://doi.org/10.1063/1.4769376

Published: December 2012

View articletitled, Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Journal Articles

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Dipak Paramanik, Abhishek Motayed, Geetha S. Aluri, Jong-Yoon Ha, Sergiy Krylyuk, Albert V. Davydov, Matthew King, Sean McLaughlin, Shalini Gupta, Harlan Cramer

J. Vac. Sci. Technol. B 30, 052202 (2012)

https://doi.org/10.1116/1.4739424

Published: July 2012

View articletitled, Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Journal Articles

Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Abhishek Motayed, Sergiy Krylyuk, Albert V. Davydov

Appl. Phys. Lett. 99, 113107 (2011)

https://doi.org/10.1063/1.3637049

Published: September 2011

View articletitled, Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Includes: Supplementary data

Journal Articles

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Matt D. Brubaker, Igor Levin, Albert V. Davydov, Devin M. Rourke, Norman A. Sanford, Victor M. Bright, Kris A. Bertness

J. Appl. Phys. 110, 053506 (2011)

https://doi.org/10.1063/1.3633522

Published: September 2011

View articletitled, Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Journal Articles

Rapid thermal oxidation of silicon nanowires

Sergiy Krylyuk, Albert V. Davydov, Igor Levin, Abhishek Motayed, Mark D. Vaudin

Appl. Phys. Lett. 94, 063113 (2009)

https://doi.org/10.1063/1.3079395

Published: February 2009

View articletitled, Rapid thermal oxidation of silicon nanowires

Journal Articles

GaN-nanowire/amorphous-Si core-shell heterojunction diodes

Abhishek Motayed, Albert V. Davydov

Appl. Phys. Lett. 93, 193102 (2008)

https://doi.org/10.1063/1.3021390

Published: November 2008

View articletitled, GaN-nanowire/amorphous-Si core-shell heterojunction diodes

Journal Articles

Experimental investigation of electron transport properties of gallium nitride nanowires

Abhishek Motayed, Albert V. Davydov, S. N. Mohammad, John Melngailis

J. Appl. Phys. 104, 024302 (2008)

https://doi.org/10.1063/1.2952035

Published: July 2008

View articletitled, Experimental investigation of electron transport properties of gallium nitride nanowires

Journal Articles

365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes

Abhishek Motayed, Albert V. Davydov, Maoqi He, S. N. Mohammad, John Melngailis

Appl. Phys. Lett. 90, 183120 (2007)

https://doi.org/10.1063/1.2735928

Published: May 2007

View articletitled, 365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes

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Characterization of out-of-plane transport properties of Sm_0.2Ce_0.8O_2−δ in all-thin-film hetero-epitaxial structures

The growth of self-intercalated Nb_1+xSe₂ by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity

Elemental excitations in MoI₃ one-dimensional van der Waals nanowires

Phase transition of Al₂O₃-encapsulated MoTe₂ via rapid thermal annealing

Low barrier height in a ZnO nanorods/NbSe₂ heterostructure prepared by van der Waals epitaxy

MoS₂ thin films from a (N^tBu)₂(NMe₂)₂Mo and 1-propanethiol atomic layer deposition process

Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS₂ on GaN

Phonon anharmonicity in bulk T_d-MoTe₂

Transfer characteristics and low-frequency noise in single- and multi-layer MoS₂ field-effect transistors

Al₂O₃ as a suitable substrate and a dielectric layer for n-layer MoS₂

Faceting control in core-shell GaN micropillars using selective epitaxy

Top-down fabrication of large-area GaN micro- and nanopillars

Large-area GaN n-core/p-shell arrays fabricated using top-down etching and selective epitaxial overgrowth

Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme

Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy

Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

Rapid thermal oxidation of silicon nanowires

GaN-nanowire/amorphous-Si core-shell heterojunction diodes

Experimental investigation of electron transport properties of gallium nitride nanowires

365 nm operation of n -nanowire/ p -gallium nitride homojunction light emitting diodes

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