Page 1 | Search Results | AIP Publishing

1-20 of 44

Sort by

Sort Order Select

Journal Articles

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Zhi-Wei Zheng, Chun-Hu Cheng, Kun-I Chou, Ming Liu, Albert Chin

Appl. Phys. Lett. 101, 243507 (2012)

https://doi.org/10.1063/1.4772003

Published: December 2012

View articletitled, Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Journal Articles

Ohmic contact on n-type Ge using Yb-germanide

Zhi-Wei Zheng, Teng-Chieh Ku, Ming Liu, Albert Chin

Appl. Phys. Lett. 101, 223501 (2012)

https://doi.org/10.1063/1.4768700

Published: November 2012

View articletitled, Ohmic contact on n-type Ge using Yb-germanide

Journal Articles

Stacked GeO / SrTiO x Resistive Memory with Ultralow Resistance Currents

C. H. Cheng, Albert Chin, F. S. Yeh

Appl. Phys. Lett. 98, 052905 (2011)

https://doi.org/10.1063/1.3549689

Published: February 2011

View articletitled, Stacked GeO / SrTiO x Resistive Memory with Ultralow Resistance Currents

Journal Articles

Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

C. Y. Tsai, T. H. Lee, C. H. Cheng, Albert Chin, Hong Wang

Appl. Phys. Lett. 97, 213504 (2010)

https://doi.org/10.1063/1.3522890

Published: November 2010

View articletitled, Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

Journal Articles

Interfacial layer dependence on device property of high- κ TiLaO Ge/Si N -type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

W. B. Chen, Albert Chin

Appl. Phys. Lett. 95, 212105 (2009)

https://doi.org/10.1063/1.3265947

Published: November 2009

View articletitled, Interfacial layer dependence on device property of high- κ TiLaO Ge/Si N -type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

Journal Articles

Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

Ping-Hung Tsai, Kuei-Shu Chang-Liao, Dong-Wei Yang, Yuan-Bin Chung, Tien-Ko Wang, P. J. Tzeng, C. H. Lin, L. S. Lee, M. J. Tsai, Albert Chin

Appl. Phys. Lett. 93, 252902 (2008)

https://doi.org/10.1063/1.3043976

Published: December 2008

View articletitled, Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

Includes: Supplementary data

Journal Articles

A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers

Ming-Feng Chang, Po-Tsung Lee, S. P. McAlister, Albert Chin

Appl. Phys. Lett. 93, 233302 (2008)

https://doi.org/10.1063/1.3046115

Published: December 2008

View articletitled, A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers

Journal Articles

Formation of dual-phase Hf O 2 – Hf x Si 1 − x O 2 dielectric and its application in memory devices

Ying Qian Wang, Jing Hao Chen, Won Jong Yoo, Yee-Chia Yeo, Albert Chin, An Yan Du

J. Appl. Phys. 98, 013536 (2005)

https://doi.org/10.1063/1.1954870

Published: July 2005

View articletitled, Formation of dual-phase Hf O 2 – Hf x Si 1 − x O 2 dielectric and its application in memory devices

Journal Articles

Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

C. L. Sun, S. Y. Chen, C. C. Liao, Albert Chin

Appl. Phys. Lett. 85, 4726–4728 (2004)

https://doi.org/10.1063/1.1814440

Published: November 2004

View articletitled, Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

Journal Articles

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric

Nan Wu, Qingchun Zhang, Chunxiang Zhu, D. S. H. Chan, M. F. Li, N. Balasubramanian, Albert Chin, Dim-Lee Kwong

Appl. Phys. Lett. 85, 4127–4129 (2004)

https://doi.org/10.1063/1.1812835

Published: November 2004

View articletitled, Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric

Journal Articles

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Xiongfei Yu, Chunxiang Zhu, M. F. Li, Albert Chin, A. Y. Du, W. D. Wang, Dim-Lee Kwong

Appl. Phys. Lett. 85, 2893–2895 (2004)

https://doi.org/10.1063/1.1795369

Published: October 2004

View articletitled, Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Journal Articles

Electron mobility in Ge and strained- Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Tony Low, M. F. Li, Chen Shen, Yee-Chia Yeo, Y. T. Hou, Chunxiang Zhu, Albert Chin, D. L. Kwong

Appl. Phys. Lett. 85, 2402–2404 (2004)

https://doi.org/10.1063/1.1788888

Published: September 2004

View articletitled, Electron mobility in Ge and strained- Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Journal Articles

Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Nan Wu, Qingchun Zhang, Chunxiang Zhu, Chia Chin Yeo, S. J. Whang, D. S. H. Chan, M. F. Li, Byung Jin Cho, Albert Chin, Dim-Lee Kwong, A. Y. Du, C. H. Tung, N. Balasubramanian

Appl. Phys. Lett. 84, 3741–3743 (2004)

https://doi.org/10.1063/1.1737057

Published: May 2004

View articletitled, Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Journal Articles

Bi 3.25 La 0.75 Ti 3 O 12 thin films on ultrathin Al 2 O 3 buffered Si for ferroelectric memory application

San-Yuan Chen, Chia-Liang Sun, Shi-Bai Chen, Albert Chin

Appl. Phys. Lett. 80, 3168–3170 (2002)

https://doi.org/10.1063/1.1471937

Published: April 2002

View articletitled, Bi 3.25 La 0.75 Ti 3 O 12 thin films on ultrathin Al 2 O 3 buffered Si for ferroelectric memory application

Journal Articles

Effect of annealing temperature on physical and electrical properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films on Al 2 O 3 -buffered Si

Chia-Liang Sun, San-Yuan Chen, Shi-Bai Chen, Albert Chin

Appl. Phys. Lett. 80, 1984–1986 (2002)

https://doi.org/10.1063/1.1459115

Published: March 2002

View articletitled, Effect of annealing temperature on physical and electrical properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films on Al 2 O 3 -buffered Si

Journal Articles

The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

Y. H. Wu, W. J. Chen, Albert Chin, C. Tsai

Appl. Phys. Lett. 74, 528–530 (1999)

https://doi.org/10.1063/1.123176

Published: January 1999

View articletitled, The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

Journal Articles

High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C

Albert Chin, B. C. Lin, W. J. Chen

Appl. Phys. Lett. 69, 1617–1619 (1996)

https://doi.org/10.1063/1.117049

Published: September 1996

View articletitled, High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C

Journal Articles

Picosecond photoresponse of carriers in Si ion‐implanted Si

Albert Chin, K. Y. Lee, B. C. Lin, S. Horng

Appl. Phys. Lett. 69, 653–655 (1996)

https://doi.org/10.1063/1.117795

Published: July 1996

View articletitled, Picosecond photoresponse of carriers in Si ion‐implanted Si

Journal Articles

Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties

Albert Chin, W. J. Chen

Appl. Phys. Lett. 69, 443–445 (1996)

https://doi.org/10.1063/1.118133

Published: July 1996

View articletitled, Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties

Journal Articles

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Albert Chin, W. J. Chen, F. Ganikhanov, G.‐R. Lin, Jia‐Min Shieh, Ci‐Ling Pan, K. C. Hsieh

Appl. Phys. Lett. 69, 397–399 (1996)

https://doi.org/10.1063/1.118073

Published: July 1996

View articletitled, Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Update search

NARROW

Format

Topics

Journal

Article Type

Issue Section

Date

Availability

Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrode

Ohmic contact on n-type Ge using Yb-germanide

Stacked GeO / SrTiO x Resistive Memory with Ultralow Resistance Currents

Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

Interfacial layer dependence on device property of high- κ TiLaO Ge/Si N -type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness

Crucial integration of high work-function metal gate and high- k blocking oxide on charge-trapping type flash memory device

A flexible organic pentacene nonvolatile memory based on high- κ dielectric layers

Formation of dual-phase Hf O 2 – Hf x Si 1 − x O 2 dielectric and its application in memory devices

Low voltage lead titanate/Si one-transistor ferroelectric memory with good device characteristics

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric

Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate

Electron mobility in Ge and strained- Si channel ultrathin-body metal-oxide semi conductor field-effect transistors

Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Bi 3.25 La 0.75 Ti 3 O 12 thin films on ultrathin Al 2 O 3 buffered Si for ferroelectric memory application

Effect of annealing temperature on physical and electrical properties of Bi 3.25 La 0.75 Ti 3 O 12 thin films on Al 2 O 3 -buffered Si

The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si

High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 °C

Picosecond photoresponse of carriers in Si ion‐implanted Si

Observation of compositional modulation in (111)A InGaAs quantum wells and the effect on optical properties

Microstructure and subpicosecond photoresponse in GaAs grown by molecular beam epitaxy at very low temperatures

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Update search

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only