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Journal Articles

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder

APL Mater. 11, 089201 (2023)

https://doi.org/10.1063/5.0148068

Published: August 2023

View article titled, Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Journal Articles

Polarization switching in thin doped HfO₂ ferroelectric layers

Monica Materano, Patrick D. Lomenzo, Halid Mulaosmanovic, Michael Hoffmann, Akira Toriumi, Thomas Mikolajick, Uwe Schroeder

Appl. Phys. Lett. 117, 262904 (2020)

https://doi.org/10.1063/5.0035100

Published: December 2020

View article titled, Polarization switching in thin doped HfO2 ferroelectric layers

Journal Articles

Reaction of GeO₂ with Ge and crystallization of GeO₂ on Ge

Min Xie, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

J. Appl. Phys. 127, 024101 (2020)

https://doi.org/10.1063/1.5120886

Published: January 2020

View article titled, Reaction of GeO2 with Ge and crystallization of GeO2 on Ge

Journal Articles

Interface reaction kinetics in SiGe oxidation

Xiuyan Li, Yusuke Noma, Woojin Song, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 115, 232901 (2019)

https://doi.org/10.1063/1.5109746

Published: December 2019

View article titled, Interface reaction kinetics in SiGe oxidation

Journal Articles

Almost pinning-free bismuth/Ge and /Si interfaces

Tomonori Nishimura, Xuan Luo, Soshi Matsumoto, Takeaki Yajima, Akira Toriumi

AIP Advances 9, 095013 (2019)

https://doi.org/10.1063/1.5115535

Published: September 2019

View article titled, Almost pinning-free bismuth/Ge and /Si interfaces

Journal Articles

Thermodynamic control of ferroelectric-phase formation in Hf_xZr_1−xO₂ and ZrO₂

Shigehisa Shibayama, Tomonori Nishimura, Shinji Migita, Akira Toriumi

J. Appl. Phys. 124, 184101 (2018)

https://doi.org/10.1063/1.5028181

Published: November 2018

View article titled, Thermodynamic control of ferroelectric-phase formation in HfxZr1−xO2 and ZrO2

Journal Articles

Evolution of ferroelectric HfO₂ in ultrathin region down to 3 nm

Xuan Tian, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi

Appl. Phys. Lett. 112, 102902 (2018)

https://doi.org/10.1063/1.5017094

Published: March 2018

View article titled, Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

Journal Articles

Study of SiGe oxidation kinetics for preferential SiO₂ formation under a low O₂ pressure condition

Woojin Song, Akira Toriumi

J. Appl. Phys. 122, 185301 (2017)

https://doi.org/10.1063/1.5009758

Published: November 2017

View article titled, Study of SiGe oxidation kinetics for preferential SiO2 formation under a low O2 pressure condition

Journal Articles

Kinetic pathway of the ferroelectric phase formation in doped HfO₂ films

Lun Xu, Tomonori Nishimura, Shigehisa Shibayama, Takeaki Yajima, Shinji Migita, Akira Toriumi

J. Appl. Phys. 122, 124104 (2017)

https://doi.org/10.1063/1.5003918

Published: September 2017

View article titled, Kinetic pathway of the ferroelectric phase formation in doped HfO2 films

Journal Articles

Thermodynamic understanding and analytical modeling of interfacial SiO₂ scavenging in HfO₂ gate stacks on Si, SiGe, and SiC

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 110, 142903 (2017)

https://doi.org/10.1063/1.4979711

Published: April 2017

View article titled, Thermodynamic understanding and analytical modeling of interfacial SiO2 scavenging in HfO2 gate stacks on Si, SiGe, and SiC

Includes: Supplementary data

Journal Articles

Interfacial SiO₂ scavenging kinetics in HfO₂ gate stack

Xiuyan Li, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 109, 202905 (2016)

https://doi.org/10.1063/1.4968002

Published: November 2016

View article titled, Interfacial SiO2 scavenging kinetics in HfO2 gate stack

Journal Articles

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi

AIP Advances 6, 015114 (2016)

https://doi.org/10.1063/1.4941072

Published: January 2016

View article titled, Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Journal Articles

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 107, 072904 (2015)

https://doi.org/10.1063/1.4928749

Published: August 2015

View article titled, Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Journal Articles

Structural and thermodynamic consideration of metal oxide doped GeO₂ for gate stack formation on germanium

Cimang Lu, Choong Hyun Lee, Wenfeng Zhang, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

J. Appl. Phys. 116, 174103 (2014)

https://doi.org/10.1063/1.4901205

Published: November 2014

View article titled, Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium

Journal Articles

Effect of Si substrate on interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks

Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Appl. Phys. Lett. 105, 182902 (2014)

https://doi.org/10.1063/1.4901172

Published: November 2014

View article titled, Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks

Journal Articles

Enhancement of thermal stability and water resistance in yttrium-doped GeO₂/Ge gate stack

Cimang Lu, Choong Hyun Lee, Wenfeng Zhang, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi

Appl. Phys. Lett. 104, 092909 (2014)

https://doi.org/10.1063/1.4868032

Published: March 2014

View article titled, Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack

Journal Articles

Large Fermi energy modulation in graphene transistors with high-pressure O₂-annealed Y₂O₃ topgate insulators

Kaoru Kanayama, Kosuke Nagashio, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 104, 083519 (2014)

https://doi.org/10.1063/1.4867202

Published: February 2014

View article titled, Large Fermi energy modulation in graphene transistors with high-pressure O2-annealed Y2O3 topgate insulators

Includes: Supplementary data

Journal Articles

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

Ryota Ifuku, Kosuke Nagashio, Tomonori Nishimura, Akira Toriumi

Appl. Phys. Lett. 103, 033514 (2013)

https://doi.org/10.1063/1.4815990

Published: July 2013

View article titled, The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

Includes: Supplementary data

Journal Articles

Direct observation of charge transfer region at interfaces in graphene devices

Naoka Nagamura, Koji Horiba, Satoshi Toyoda, Shodai Kurosumi, Toshihiro Shinohara, Masaharu Oshima, Hirokazu Fukidome, Maki Suemitsu, Kosuke Nagashio, Akira Toriumi

Appl. Phys. Lett. 102, 241604 (2013)

https://doi.org/10.1063/1.4808083

Published: June 2013

View article titled, Direct observation of charge transfer region at interfaces in graphene devices

Includes: Supplementary data

Journal Articles

Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

Choong Hyun Lee, Tomonori Nishimura, Toshiyuki Tabata, DanDan Zhao, Kosuke Nagashio, Akira Toriumi

Appl. Phys. Lett. 102, 232107 (2013)

https://doi.org/10.1063/1.4810002

Published: June 2013

View article titled, Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

NARROW

Topics

Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

Polarization switching in thin doped HfO₂ ferroelectric layers

Reaction of GeO₂ with Ge and crystallization of GeO₂ on Ge

Interface reaction kinetics in SiGe oxidation

Almost pinning-free bismuth/Ge and /Si interfaces

Thermodynamic control of ferroelectric-phase formation in Hf_xZr_1−xO₂ and ZrO₂

Evolution of ferroelectric HfO₂ in ultrathin region down to 3 nm

Study of SiGe oxidation kinetics for preferential SiO₂ formation under a low O₂ pressure condition

Kinetic pathway of the ferroelectric phase formation in doped HfO₂ films

Thermodynamic understanding and analytical modeling of interfacial SiO₂ scavenging in HfO₂ gate stacks on Si, SiGe, and SiC

Interfacial SiO₂ scavenging kinetics in HfO₂ gate stack

Experimental evidence of zone-center optical phonon softening by accumulating holes in thin Ge

Yttrium scandate thin film as alternative high-permittivity dielectric for germanium gate stack formation

Structural and thermodynamic consideration of metal oxide doped GeO₂ for gate stack formation on germanium

Effect of Si substrate on interfacial SiO₂ scavenging in HfO₂/SiO₂/Si stacks

Enhancement of thermal stability and water resistance in yttrium-doped GeO₂/Ge gate stack

Large Fermi energy modulation in graphene transistors with high-pressure O₂-annealed Y₂O₃ topgate insulators

The density of states of graphene underneath a metal electrode and its correlation with the contact resistivity

Direct observation of charge transfer region at interfaces in graphene devices

Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors

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