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Akinobu Teramoto
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Journal Articles

Effect of charge-up of surfaces of sintered Y2O3 and yttrium oxyfluoride on their erosion rates due to ion bombardment

Tetsuya Goto, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 40, 062205 (2022)
https://doi.org/10.1116/6.0002162
Published: November 2022
View article titled, Effect of charge-up of surfaces of sintered Y<sub>2</sub>O<sub>3</sub> and yttrium oxyfluoride on their erosion rates due to ion bombardment
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Journal Articles

Adsorption and surface reaction of isopropyl alcohol on SiO2 surfaces

Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 40, 053201 (2022)
https://doi.org/10.1116/6.0002002
Published: July 2022
View article titled, Adsorption and surface reaction of isopropyl alcohol on SiO<sub>2</sub> surfaces
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Journal Articles

Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes

Takezo Mawaki, Akinobu Teramoto, Katsutoshi Ishii, Yoshinobu Shiba, Rihito Kuroda, Tomoyuki Suwa, Shuji Azumo, Akira Shimizu, Kota Umezawa, Yasuyuki Shirai, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 39, 013403 (2021)
https://doi.org/10.1116/6.0000618
Published: December 2020
View article titled, Modification of copper and copper oxide surface states due to isopropyl alcohol treatment toward area-selective processes
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Journal Articles

Plasma resistance of sintered and ion-plated yttrium oxyfluorides with various Y, O, and F composition ratios for use in plasma process chamber

Tetsuya Goto, Yoshinobu Shiba, Akinobu Teramoto, Yukio Kishi, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 043003 (2020)
https://doi.org/10.1116/1.5142515
Published: June 2020
View article titled, Plasma resistance of sintered and ion-plated yttrium oxyfluorides with various Y, O, and F composition ratios for use in plasma process chamber
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Journal Articles

Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition

Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 38, 032408 (2020)
https://doi.org/10.1116/6.0000021
Published: April 2020
View article titled, Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition
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Journal Articles

Stable yttrium oxyfluoride used in plasma process chamber

Yoshinobu Shiba, Akinobu Teramoto, Tetsuya Goto, Yukio Kishi, Yasuyuki Shirai, Shigetoshi Sugawa
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 35, 021405 (2017)
https://doi.org/10.1116/1.4975143
Published: January 2017
View article titled, Stable yttrium oxyfluoride used in plasma process chamber
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Journal Articles

Detection of short range order in SiO2 thin-films by grazing-incidence wide and small-angle X-ray scattering

Kohki Nagata, Atsushi Ogura, Ichiro Hirosawa, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 154103 (2016)
https://doi.org/10.1063/1.4947053
Published: April 2016
View article titled, Detection of short range order in SiO<sub>2</sub> thin-films by grazing-incidence wide and small-angle X-ray scattering
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Journal Articles

Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave

Kazumasa Kawase, Tsukasa Motoya, Yasushi Uehara, Akinobu Teramoto, Tomoyuki Suwa, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 32, 051502 (2014)
https://doi.org/10.1116/1.4886770
Published: July 2014
View article titled, Mass densification and defect restoration in chemical vapor deposition silicon dioxide film using Ar plasma excited by microwave
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Journal Articles

Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

Kazumasa Kawase, Akinobu Teramoto, Hiroshi Umeda, Tomoyuki Suwa, Yasushi Uehara, Takeo Hattori, Tadahiro Ohmi
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 034101 (2012)
https://doi.org/10.1063/1.3679553
Published: February 2012
View article titled, Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation
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Journal Articles

Erratum: “Angle-resolved phototelectron study on the structures of silicon nitride films and Si 3 N 4 / Si interfaces formed using nitrogen-hydrogen radicals” [J. Appl. Phys. 104, 114112 (2008)]

Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohimi, Takeo Hattori
Journal: Journal of Applied Physics
J. Appl. Phys. 107, 069902 (2010)
https://doi.org/10.1063/1.3366705
Published: March 2010
View article titled, Erratum: “Angle-resolved phototelectron study on the structures of silicon nitride films and Si 3 N 4 / Si interfaces formed using nitrogen-hydrogen radicals” [J. Appl. Phys. 104, 114112 (2008)]
Open the PDF for Erratum: “Angle-resolved phototelectron study on the structures of silicon nitride films and Si 3 N 4 / Si interfaces formed using nitrogen-hydrogen radicals” [J. Appl. Phys. 104, 114112 (2008)] in another window
Journal Articles

Inductively coupled plasma generator for an environmentally benign perfluorocarbon abatement system

Katsumasa Suzuki, Yoshio Ishihara, Kaoru Sakoda, Yasuyuki Shirai, Akinobu Teramoto, Masaki Hirayama, Tadahiro Ohmi, Takayuki Watanabe, Takashi Ito
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 27, 465–470 (2009)
https://doi.org/10.1116/1.3106612
Published: March 2009
View article titled, Inductively coupled plasma generator for an environmentally benign perfluorocarbon abatement system
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Journal Articles

Stress-induced leakage current and random telegraph signal

Akinobu Teramoto, Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa, Shunichi Watabe, Tomoyuki Suwa, Naoto Miyamoto, Shigetoshi Sugawa, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 435–438 (2009)
https://doi.org/10.1116/1.3054269
Published: February 2009
View article titled, Stress-induced leakage current and random telegraph signal
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Journal Articles

Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng, Tatsufumi Hamada, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 394–401 (2009)
https://doi.org/10.1116/1.3054280
Published: February 2009
View article titled, Different mechanism to explain the 1 ∕ f noise in n - and p -SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers
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Journal Articles

Angle-resolved photoelectron study on the structures of silicon nitride films and Si 3 N 4 / Si interfaces formed using nitrogen-hydrogen radicals

Takashi Aratani, Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori
Journal: Journal of Applied Physics
J. Appl. Phys. 104, 114112 (2008)
https://doi.org/10.1063/1.3002418
Published: December 2008
View article titled, Angle-resolved photoelectron study on the structures of silicon nitride films and Si 3 N 4 / Si interfaces formed using nitrogen-hydrogen radicals
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Journal Articles

Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer

Tetsuya Goto, Kazuyuki Ikenaga, Akinobu Teramoto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi
Journal: Journal of Vacuum Science & Technology A
J. Vac. Sci. Technol. A 26, 8–16 (2008)
https://doi.org/10.1116/1.2804424
Published: December 2007
View article titled, Damage-free microwave-excited plasma etching without carrier deactivation of heavily doped Si under thin silicide layer
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Journal Articles

Subnitride and valence band offset at Si 3 N 4 ∕ Si interface formed using nitrogen-hydrogen radicals

Masaaki Higuchi, Shigetoshi Sugawa, Eiji Ikenaga, Jiro Ushio, Hiroshi Nohira, Takuya Maruizumi, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 123114 (2007)
https://doi.org/10.1063/1.2715037
Published: March 2007
View article titled, Subnitride and valence band offset at Si 3 N 4 ∕ Si interface formed using nitrogen-hydrogen radicals
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Journal Articles

Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy

Kenta Arima, Jun Katoh, Shinya Horie, Katsuyoshi Endo, Tomoya Ono, Shigetoshi Sugawa, Hiroshi Akahori, Akinobu Teramoto, Tadahiro Ohmi
Journal: Journal of Applied Physics
J. Appl. Phys. 98, 103525 (2005)
https://doi.org/10.1063/1.2136214
Published: November 2005
View article titled, Hydrogen termination of Si(110) surfaces upon wet cleaning revealed by highly resolved scanning tunneling microscopy
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Journal Articles

Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in n‐channel metal‐oxide‐semiconductor field‐effect transistors

Kiyoteru Kobayashi, Akinobu Teramoto, Makoto Hirayama, Yasushi Fujita
Journal: Journal of Applied Physics
J. Appl. Phys. 77, 3277–3282 (1995)
https://doi.org/10.1063/1.358681
Published: April 1995
View article titled, Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in <em>n</em>‐channel metal‐oxide‐semiconductor field‐effect transistors
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