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Journal Articles

Enhanced oxygen evolution reaction in flexoelectric thin-film heterostructures

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Jibo Xu, Xiaoyan Zhang, Xia Liu, Ming Wu, Junzhe Liu, Zhiyu Liu, Meiyue Li, Yuhao Yue, Yawen Xu, Chenyu Dong, Weijie Zheng, Lin Zhu, Yanqiang Cao, Chunyan Zheng, Jianyi Liu, Aidong Li, Di Wu, Lixue Zhang, Zheng Wen
Journal: Applied Physics Reviews
Appl. Phys. Rev. 11, 041419 (2024)
https://doi.org/10.1063/5.0215284
Published: November 2024
View articletitled, Enhanced oxygen evolution reaction in flexoelectric thin-film heterostructures
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Journal Articles

Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices

Ping Ding, Youbin Yang, Yiru Wang, Chang Liu, Jiang Yin, Yidong Xia, Aidong Li, Zhiguo Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 114, 053506 (2019)
https://doi.org/10.1063/1.5063625
Published: February 2019
View articletitled, Band-alignment dominated retention behaviors in high-k composite charge-trapping memory devices
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Journal Articles

Light-controlled stateful logic operations using optoelectronic switches based on p-Si/HfO2 heterostructures

Yan Chen, Shengju Zhu, Qi Wei, Yidong Xia, Aidong Li, Jiang Yin, Zhiguo Liu
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 063503 (2018)
https://doi.org/10.1063/1.5018226
Published: February 2018
View articletitled, Light-controlled stateful logic operations using optoelectronic switches based on p-Si/HfO2 heterostructures
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Journal Articles

Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Jieji Ruan, Chen Li, Zhoushen Yuan, Peng Wang, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 252903 (2016)
https://doi.org/10.1063/1.4972786
Published: December 2016
View articletitled, Four-state non-volatile memory in a multiferroic spin filter tunnel junction
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Includes: Supplementary data
Journal Articles

Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier

Jieji Ruan, Xiangbiao Qiu, Zhoushen Yuan, Dianxiang Ji, Peng Wang, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 107, 232902 (2015)
https://doi.org/10.1063/1.4937390
Published: December 2015
View articletitled, Improved memory functions in multiferroic tunnel junctions with a dielectric/ferroelectric composite barrier
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Includes: Supplementary data
Journal Articles

Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films

Xuan Shen, Xiangbiao Qiu, Dong Su, Shengqiang Zhou, Aidong Li, Di Wu
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 015307 (2015)
https://doi.org/10.1063/1.4905485
Published: January 2015
View articletitled, Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films
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Journal Articles

The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices

Jianxin Lu, Changjie Gong, Xin Ou, Wei Lu, Jiang Yin, Bo Xu, Yidong Xia, Zhiguo Liu, Aidong Li
Journal: AIP Advances
AIP Advances 4, 117110 (2014)
https://doi.org/10.1063/1.4901914
Published: November 2014
View articletitled, The roles of the dielectric constant and the relative level of conduction band of high-k composite with Si in improving the memory performance of charge-trapping memory devices
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Journal Articles

The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1−x high-k charge-trapping devices

Changjie Gong, Qiaonan Yin, Xin Ou, Xuexin Lan, Jinqiu Liu, Chong Sun, Laiguo Wang, Wei Lu, Jiang Yin, Bo Xu, Yidong Xia, Zhiguo Liu, Aidong Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 123504 (2014)
https://doi.org/10.1063/1.4896595
Published: September 2014
View articletitled, The dominant factors affecting the memory characteristics of (Ta2O5)x(Al2O3)1−x high-k charge-trapping devices
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Journal Articles

Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions

Zheng Wen, Di Wu, Aidong Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 052910 (2014)
https://doi.org/10.1063/1.4892846
Published: August 2014
View articletitled, Memristive behaviors in Pt/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junctions
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Includes: Supplementary data
Journal Articles

Ferroelectric modulation on resonant tunneling through perovskite double-barriers

Ruifang Du, Xiangbiao Qiu, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 142907 (2014)
https://doi.org/10.1063/1.4871277
Published: April 2014
View articletitled, Ferroelectric modulation on resonant tunneling through perovskite double-barriers
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Journal Articles

Mechanical switching of ferroelectric polarization in ultrathin BaTiO3 films: The effects of epitaxial strain

Zheng Wen, Xiangbiao Qiu, Chen Li, Chunyan Zheng, Xiaohui Ge, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 042907 (2014)
https://doi.org/10.1063/1.4863855
Published: January 2014
View articletitled, Mechanical switching of ferroelectric polarization in ultrathin BaTiO3 films: The effects of epitaxial strain
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Includes: Supplementary data
Journal Articles

The metallic interface between insulating NdGaO3 and SrTiO3 perovskites

Chen Li, Qinfang Xu, Zheng Wen, Shantao Zhang, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 201602 (2013)
https://doi.org/10.1063/1.4830042
Published: November 2013
View articletitled, The metallic interface between insulating NdGaO3 and SrTiO3 perovskites
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Includes: Supplementary data
Journal Articles

Temperature-dependent tunneling electroresistance in Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions

Zheng Wen, Lu You, Junling Wang, Aidong Li, Di Wu
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 132913 (2013)
https://doi.org/10.1063/1.4823580
Published: September 2013
View articletitled, Temperature-dependent tunneling electroresistance in Pt/BaTiO3/SrRuO3 ferroelectric tunnel junctions
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Journal Articles

The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices

Xuexin Lan, Xin Ou, Yanqiang Cao, Shiyu Tang, Changjie Gong, Bo Xu, Yidong Xia, Jiang Yin, Aidong Li, Feng Yan, Zhiguo Liu
Journal: Journal of Applied Physics
J. Appl. Phys. 114, 044104 (2013)
https://doi.org/10.1063/1.4816463
Published: July 2013
View articletitled, The effect of thermal treatment induced inter-diffusion at the interfaces on the charge trapping performance of HfO2/Al2O3 nanolaminate-based memory devices
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Journal Articles

Strain effects on magnetic characteristics of ultrathin La0.7Sr0.3MnO3 in epitaxial La0.7Sr0.3MnO3/BaTiO3 superlattices

Xuan Shen, Dan Mo, Chen Li, Di Wu, Aidong Li
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 123919 (2012)
https://doi.org/10.1063/1.4770485
Published: December 2012
View articletitled, Strain effects on magnetic characteristics of ultrathin La0.7Sr0.3MnO3 in epitaxial La0.7Sr0.3MnO3/BaTiO3 superlattices
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Journal Articles

Magnetic and transport characteristics of long-period [(LaMnO3)n/(SrMnO3)n]m (n  ≥  3) superlattices

Geming Wang, Ruifang Du, Di Wu, Aidong Li
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 103917 (2012)
https://doi.org/10.1063/1.4767227
Published: November 2012
View articletitled, Magnetic and transport characteristics of long-period [(LaMnO3)n/(SrMnO3)n]m (n  ≥  3) superlattices
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Journal Articles

Redox-controlled memristive switching in the junctions employing Ti reactive electrodes

Haitao Li, Yidong Xia, Hanni Xu, Lifei Liu, Xuefei Li, Zhenjie Tang, Xiangzhong Chen, Aidong Li, Jiang Yin, Zhiguo Liu
Journal: AIP Advances
AIP Advances 1, 032141 (2011)
https://doi.org/10.1063/1.3630128
Published: August 2011
View articletitled, Redox-controlled memristive switching in the junctions employing Ti reactive electrodes
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Journal Articles

Polarization fatigue of Pr and Mn co-substituted BiFeO3 thin films

Zheng Wen, Yong Lv, Di Wu, Aidong Li
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 012903 (2011)
https://doi.org/10.1063/1.3609246
Published: July 2011
View articletitled, Polarization fatigue of Pr and Mn co-substituted BiFeO3 thin films
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Journal Articles

A TiAl 2 O 5 nanocrystal charge trap memory device

Yue Zhou, Jiang Yin, Hanni Xu, Yidong Xia, Zhiguo Liu, Aidong Li, Youpin Gong, Lin Pu, Feng Yan, Yi Shi
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 143504 (2010)
https://doi.org/10.1063/1.3496437
Published: October 2010
View articletitled, A TiAl 2 O 5 nanocrystal charge trap memory device
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Journal Articles

Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO 3 thin films

Zheng Wen, Xuan Shen, Jingxian Wu, Di Wu, Aidong Li, Bin Yang, Zhu Wang, Hengzhi Chen, Junling Wang
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 202904 (2010)
https://doi.org/10.1063/1.3432083
Published: May 2010
View articletitled, Temperature-dependent leakage current characteristics of Pr and Mn cosubstituted BiFeO 3 thin films
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