Page 1 | Search Results | AIP Publishing

Skip to Main Content

Skip Nav Destination

1-3 of 3

Sort by

Sort Order Select

Journal Articles

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Ziwei Zhou, Weiwei He, Zhenzhong Zhang, Jun Sun, Adolf Schöner, Zedong Zheng

Nanotechnol. Precis. Eng. 4, 013006 (2021)

https://doi.org/10.1063/10.0003763

Published: March 2021

View article titled, Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Journal Articles

Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup

Shen Diao, Jun Sun, Ziwei Zhou, Zhenzhong Zhang, Adolf Schöner, Zedong Zheng, Weiwei He

Nanotechnol. Precis. Eng. 3, 235–240 (2020)

https://doi.org/10.1016/j.npe.2020.12.002

Published: December 2020

View article titled, Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved test setup

Journal Articles

High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes

Tsunenobu Kimoto, Nao Miyamoto, Adolf Schöner, Akira Saitoh, Hiroyuki Matsunami, Katsunori Asano, Yoshitaka Sugawara

J. Appl. Phys. 91, 4242–4248 (2002)

https://doi.org/10.1063/1.1459096

Published: April 2002

View article titled, High-energy (MeV) Al and B ion implantations into 4H-SiC and fabrication of pin diodes