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Journal Articles

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Wenbo Li, Yuxuan Zhang, Zhaoying Chen, Hongping Zhao, Steven A. Ringel, Aaron R. Arehart

Appl. Phys. Lett. 123, 112101 (2023)

https://doi.org/10.1063/5.0159560

Published: September 2023

View article titled, Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Book Chapter

Radiation Effects on β-Ga₂O₃ Materials and Devices

Book: Ultrawide Bandgap β-Ga₂O₃ Semiconductor: Theory and Applications

Series: AIPP Books, Principles

Published: February 2023

10.1063/9780735425033_012

EISBN: 978-0-7354-2503-3

ISBN: 978-0-7354-2500-2

Open the PDF for Radiation Effects on β-Ga2O3 Materials and Devices in another window

Journal Articles

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Joe F. McGlone, Hemant Ghadi, Evan Cornuelle, Andrew Armstrong, George Burns, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 133, 045702 (2023)

https://doi.org/10.1063/5.0121416

Published: January 2023

View article titled, Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

Journal Articles

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga₂O₃

Hemant Ghadi, Joe F. McGlone, Evan Cornuelle, Zixuan Feng, Yuxuan Zhang, Lingyu Meng, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

APL Mater. 10, 101110 (2022)

https://doi.org/10.1063/5.0101829

Published: October 2022

View article titled, Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3

Journal Articles

β-Gallium oxide power electronics

APL Mater. 10, 029201 (2022)

https://doi.org/10.1063/5.0060327

Published: February 2022

View article titled, β-Gallium oxide power electronics

Journal Articles

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga₂O₃

Hemant Ghadi, Joe F. McGlone, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

Appl. Phys. Lett. 117, 172106 (2020)

https://doi.org/10.1063/5.0025970

Published: October 2020

View article titled, Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga2O3

Journal Articles

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Yuxuan Zhang, Zhaoying Chen, Wenbo Li, Hyunsoo Lee, Md Rezaul Karim, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao

J. Appl. Phys. 127, 215707 (2020)

https://doi.org/10.1063/5.0008758

Published: June 2020

View article titled, Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

Journal Articles

High electron density β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ modulation doping using an ultra-thin (1 nm) spacer layer

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe F. McGlone, Yumo Liu, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

J. Appl. Phys. 127, 215706 (2020)

https://doi.org/10.1063/5.0005531

Published: June 2020

View article titled, High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer

Journal Articles

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se₂ absorber materials

Andrew J. Ferguson, Rouin Farshchi, Pran K. Paul, Pat Dippo, Jeff Bailey, Dmitry Poplavskyy, Afrina Khanam, Filip Tuomisto, Aaron R. Arehart, Darius Kuciauskas

J. Appl. Phys. 127, 215702 (2020)

https://doi.org/10.1063/1.5134502

Published: June 2020

View article titled, Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se2 absorber materials

Includes: Supplementary data

Journal Articles

Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition

Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel

APL Mater. 8, 021111 (2020)

https://doi.org/10.1063/1.5142313

Published: February 2020

View article titled, Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition

Journal Articles

Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Akhil Mauze, Joel B. Varley, Thomas E. Blue, James S. Speck, Aaron R. Arehart, Steven A. Ringel

APL Mater. 7, 121102 (2019)

https://doi.org/10.1063/1.5126463

Published: December 2019

View article titled, Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Journal Articles

Mechanism of Si doping in plasma assisted MBE growth of β -Ga₂O₃

Nidhin Kurian Kalarickal, Zhanbo Xia, Joe McGlone, Sriram Krishnamoorthy, Wyatt Moore, Mark Brenner, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan

Appl. Phys. Lett. 115, 152106 (2019)

https://doi.org/10.1063/1.5123149

Published: October 2019

View article titled, Mechanism of Si doping in plasma assisted MBE growth of β -Ga2O3

Journal Articles

Identification of critical buffer traps in Si δ-doped β-Ga₂O₃ MESFETs

Joe F. McGlone, Zhanbo Xia, Chandan Joishi, Saurabh Lodha, Siddharth Rajan, Steven Ringel, Aaron R. Arehart

Appl. Phys. Lett. 115, 153501 (2019)

https://doi.org/10.1063/1.5118250

Published: October 2019

View article titled, Identification of critical buffer traps in Si δ-doped β-Ga2O3 MESFETs

Journal Articles

Impact of deep level defects induced by high energy neutron radiation in β -Ga₂O₃

Esmat Farzana, Max F. Chaiken, Thomas E. Blue, Aaron R. Arehart, Steven A. Ringel

APL Mater. 7, 022502 (2019)

https://doi.org/10.1063/1.5054606

Published: December 2018

View article titled, Impact of deep level defects induced by high energy neutron radiation in β -Ga2O3

Journal Articles

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Esmat Farzana, Humberto M. Foronda, Christine M. Jackson, Towhidur Razzak, Zeng Zhang, James S. Speck, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 124, 145703 (2018)

https://doi.org/10.1063/1.5050949

Published: October 2018

View article titled, Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Journal Articles

Effect of buffer iron doping on delta-doped β-Ga₂O₃ metal semiconductor field effect transistors

Chandan Joishi, Zhanbo Xia, Joe McGlone, Yuewei Zhang, Aaron R. Arehart, Steven Ringel, Saurabh Lodha, Siddharth Rajan

Appl. Phys. Lett. 113, 123501 (2018)

https://doi.org/10.1063/1.5039502

Published: September 2018

View article titled, Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors

Journal Articles

Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Esmat Farzana, Elaheh Ahmadi, James S. Speck, Aaron R. Arehart, Steven A. Ringel

J. Appl. Phys. 123, 161410 (2018)

https://doi.org/10.1063/1.5010608

Published: March 2018

View article titled, Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy

Journal Articles

Large-area SnSe₂/GaN heterojunction diodes grown by molecular beam epitaxy

Choong Hee Lee, Sriram Krishnamoorthy, Pran K. Paul, Dante J. O'Hara, Mark R. Brenner, Roland K. Kawakami, Aaron R. Arehart, Siddharth Rajan

Appl. Phys. Lett. 111, 202101 (2017)

https://doi.org/10.1063/1.4994582

Published: November 2017

View article titled, Large-area SnSe2/GaN heterojunction diodes grown by molecular beam epitaxy

Includes: Supplementary data

Journal Articles

Modulation-doped β-(Al_0.2Ga_0.8)₂O₃/Ga₂O₃ field-effect transistor

Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan

Appl. Phys. Lett. 111, 023502 (2017)

https://doi.org/10.1063/1.4993569

Published: July 2017

View article titled, Modulation-doped β-(Al0.2Ga0.8)2O3/Ga2O3 field-effect transistor

Includes: Supplementary data

Journal Articles

Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties

Esmat Farzana, Zeng Zhang, Pran K. Paul, Aaron R. Arehart, Steven A. Ringel

Appl. Phys. Lett. 110, 202102 (2017)

https://doi.org/10.1063/1.4983610

Published: May 2017

View article titled, Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

NARROW

Topics

Trap characterization of high-growth-rate laser-assisted MOCVD GaN

Radiation Effects on β-Ga₂O₃ Materials and Devices

Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga₂O₃

β-Gallium oxide power electronics

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga₂O₃

Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices

High electron density β-(Al_0.17Ga_0.83)₂O₃/Ga₂O₃ modulation doping using an ultra-thin (1 nm) spacer layer

Defect-mediated metastability and carrier lifetimes in polycrystalline (Ag,Cu)(In,Ga)Se₂ absorber materials

Full bandgap defect state characterization of β-Ga₂O₃ grown by metal organic chemical vapor deposition

Influence of neutron irradiation on deep levels in Ge-doped (010) β -Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Mechanism of Si doping in plasma assisted MBE growth of β -Ga₂O₃

Identification of critical buffer traps in Si δ-doped β-Ga₂O₃ MESFETs

Impact of deep level defects induced by high energy neutron radiation in β -Ga₂O₃

Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies

Effect of buffer iron doping on delta-doped β-Ga₂O₃ metal semiconductor field effect transistors

Deep level defects in Ge-doped (010) β-Ga₂O₃ layers grown by plasma-assisted molecular beam epitaxy

Large-area SnSe₂/GaN heterojunction diodes grown by molecular beam epitaxy

Modulation-doped β-(Al_0.2Ga_0.8)₂O₃/Ga₂O₃ field-effect transistor

Influence of metal choice on (010) β-Ga₂O₃ Schottky diode properties

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