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Journal Articles

Development and x-ray imaging performance of Tb-doped GdAlO3-αAl2O3 submicron-diameter phase-separated scintillator fibers

M. Yoshino, K. Kamada, S. Yamamoto, R. Yajima, R. Sasaki, M. Sagisaka, J. Kataoka, T. Horiai, Y. Yokota, A. Yoshikawa
Journal: AIP Advances
AIP Advances 13, 025364 (2023)
https://doi.org/10.1063/5.0136069
Published: February 2023
View articletitled, Development and x-ray imaging performance of Tb-doped GdAlO3-αAl2O3 submicron-diameter phase-separated scintillator fibers
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Journal Articles

Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity

M. O. Eriksson, S. Khromov, P. P. Paskov, X. Wang, A. Yoshikawa, P. O. Holtz, B. Monemar, V. Darakchieva
Journal: AIP Advances
AIP Advances 9, 015114 (2019)
https://doi.org/10.1063/1.5052432
Published: January 2019
View articletitled, Recombination processes in Mg doped wurtzite InN films with p- and n-type conductivity
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Journal Articles

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

T. A. Komissarova, E. Kampert, J. Law, V. N. Jmerik, P. Paturi, X. Wang, A. Yoshikawa, S. V. Ivanov
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 022104 (2018)
https://doi.org/10.1063/1.5009794
Published: January 2018
View articletitled, Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE
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Journal Articles

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

S. Khromov, P. O. Å. Persson, X. Wang, A. Yoshikawa, B. Monemar, J. Rosen, E. Janzén, V. Darakchieva
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 232102 (2015)
https://doi.org/10.1063/1.4922301
Published: June 2015
View articletitled, Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN
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Journal Articles

Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

G. Chen, X. Q. Wang, K. Fu, X. Rong, H. Hashimoto, B. S. Zhang, F. J. Xu, N. Tang, A. Yoshikawa, W. K. Ge, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 104, 172108 (2014)
https://doi.org/10.1063/1.4874982
Published: May 2014
View articletitled, Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells
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Journal Articles

Effect of Mg doping on the structural and free-charge carrier properties of InN films

M.-Y. Xie, N. Ben Sedrine, S. Schöche, T. Hofmann, M. Schubert, L. Hung, B. Monemar, X. Wang, A. Yoshikawa, K. Wang, T. Araki, Y. Nanishi, V. Darakchieva
Journal: Journal of Applied Physics
J. Appl. Phys. 115, 163504 (2014)
https://doi.org/10.1063/1.4871975
Published: April 2014
View articletitled, Effect of Mg doping on the structural and free-charge carrier properties of InN films
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Journal Articles

Scintillation characteristics of LiCaAlF6-based single crystals under X-ray excitation

M. Nikl, P. Bruza, D. Panek, M. Vrbova, E. Mihokova, J. A. Mares, A. Beitlerova, N. Kawaguchi, K. Fukuda, A. Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 161907 (2013)
https://doi.org/10.1063/1.4803047
Published: April 2013
View articletitled, Scintillation characteristics of LiCaAlF6-based single crystals under X-ray excitation
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Journal Articles

Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN

S. Schöche, T. Hofmann, V. Darakchieva, N. Ben Sedrine, X. Wang, A. Yoshikawa, M. Schubert
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 013502 (2013)
https://doi.org/10.1063/1.4772625
Published: January 2013
View articletitled, Infrared to vacuum-ultraviolet ellipsometry and optical Hall-effect study of free-charge carrier parameters in Mg-doped InN
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Journal Articles

Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities

L. H. Dmowski, M. Baj, L. Konczewicz, T. Suski, D. K. Maude, S. Grzanka, X. Q. Wang, A. Yoshikawa
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 093719 (2012)
https://doi.org/10.1063/1.4710529
Published: May 2012
View articletitled, Coexistence of free holes and electrons in InN:Mg with In- and N-growth polarities
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Journal Articles

Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p -type conduction

N. Ma, X. Q. Wang, F. J. Xu, N. Tang, B. Shen, Y. Ishitani, A. Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 222114 (2010)
https://doi.org/10.1063/1.3522892
Published: December 2010
View articletitled, Anomalous Hall mobility kink observed in Mg-doped InN: Demonstration of p -type conduction
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Journal Articles

Down-scattered neutron imaging detector for areal density measurement of inertial confinement fusion

Y. Arikawa, K. Yamanoi, T. Nakazato, E. S. Estacio, T. Shimizu, N. Sarukura, M. Nakai, H. Hosoda, T. Norimatsu, Y. Hironaka, H. Azechi, N. Izumi, T. Murata, S. Fujino, H. Yoshida, K. Kamada, Y. Usuki, T. Suyama, A. Yoshikawa, N. Satoh, H. Kan
Journal: Review of Scientific Instruments
Rev. Sci. Instrum. 81, 10D303 (2010)
https://doi.org/10.1063/1.3475535
Published: October 2010
View articletitled, Down-scattered neutron imaging detector for areal density measurement of inertial confinement fusion
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Journal Articles

Strong circular photogalvanic effect in ZnO epitaxial films

Q. Zhang, X. Q. Wang, C. M. Yin, F. J. Xu, N. Tang, B. Shen, Y. H. Chen, K. Chang, W. K. Ge, Y. Ishitani, A. Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 041907 (2010)
https://doi.org/10.1063/1.3467835
Published: July 2010
View articletitled, Strong circular photogalvanic effect in ZnO epitaxial films
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Journal Articles

Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities

X. Q. Wang, G. Z. Zhao, Q. Zhang, Y. Ishitani, A. Yoshikawa, B. Shen
Journal: Applied Physics Letters
Appl. Phys. Lett. 96, 061907 (2010)
https://doi.org/10.1063/1.3303983
Published: February 2010
View articletitled, Effect of Mg doping on enhancement of terahertz emission from InN with different lattice polarities
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Journal Articles

Lattice polarity detection of InN by circular photogalvanic effect

Q. Zhang, X. Q. Wang, X. W. He, C. M. Yin, F. J. Xu, B. Shen, Y. H. Chen, Z. G. Wang, Y. Ishitani, A. Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 031902 (2009)
https://doi.org/10.1063/1.3186042
Published: July 2009
View articletitled, Lattice polarity detection of InN by circular photogalvanic effect
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Journal Articles

Abnormal magnetic-field dependence of Hall coefficient in InN epilayers

T. A. Komissarova, M. A. Shakhov, V. N. Jmerik, T. V. Shubina, R. V. Parfeniev, S. V. Ivanov, X. Wang, A. Yoshikawa
Journal: Applied Physics Letters
Appl. Phys. Lett. 95, 012107 (2009)
https://doi.org/10.1063/1.3167823
Published: July 2009
View articletitled, Abnormal magnetic-field dependence of Hall coefficient in InN epilayers
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Journal Articles

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

L. H. Dmowski, M. Baj, T. Suski, J. Przybytek, R. Czernecki, X. Wang, A. Yoshikawa, H. Lu, W. J. Schaff, D. Muto, Y. Nanishi
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 123713 (2009)
https://doi.org/10.1063/1.3153942
Published: June 2009
View articletitled, Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior
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Journal Articles

Vacancy-type defects in Mg-doped InN probed by means of positron annihilation

A. Uedono, H. Nakamori, K. Narita, J. Suzuki, X. Wang, S.-B. Che, Y. Ishitani, A. Yoshikawa, S. Ishibashi
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 054507 (2009)
https://doi.org/10.1063/1.3075907
Published: March 2009
View articletitled, Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
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Journal Articles

Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix

A. Yoshikawa, S. B. Che, N. Hashimoto, H. Saito, Y. Ishitani, X. Q. Wang
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 26, 1551–1559 (2008)
https://doi.org/10.1116/1.2957620
Published: August 2008
View articletitled, Fabrication and characterization of novel monolayer InN quantum wells in a GaN matrix
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Journal Articles

Bowing of the band gap pressure coefficient in In x Ga 1 − x N alloys

G. Franssen, I. Gorczyca, T. Suski, A. Kamińska, J. Pereiro, E. Muñoz, E. Iliopoulos, A. Georgakilas, S. B. Che, Y. Ishitani, A. Yoshikawa, N. E. Christensen, A. Svane
Journal: Journal of Applied Physics
J. Appl. Phys. 103, 033514 (2008)
https://doi.org/10.1063/1.2837072
Published: February 2008
View articletitled, Bowing of the band gap pressure coefficient in In x Ga 1 − x N alloys
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Journal Articles

Pd–In–Fe shape memory alloy

H. Ishikawa, Y. Sutou, T. Omori, K. Oikawa, K. Ishida, A. Yoshikawa, R. Y. Umetsu, R. Kainuma
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 261906 (2007)
https://doi.org/10.1063/1.2749440
Published: June 2007
View articletitled, Pd–In–Fe shape memory alloy
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