Page 1 | Search Results | AIP Publishing

1-20 of 212

Sort by

Sort Order Select

Journal Articles

In 0.68 Ga 0.32 As ∕ Al 0.64 In 0.36 As ∕ In P 4.5 μ m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

J. Chen, O. Malis, A. M. Sergent, D. L. Sivco, N. Weimann, A. Y. Cho

J. Vac. Sci. Technol. B 25, 913–915 (2007)

https://doi.org/10.1116/1.2740287

Published: May 2007

View article titled, In 0.68 Ga 0.32 As ∕ Al 0.64 In 0.36 As ∕ In P 4.5 μ m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

Journal Articles

Two-dimensional electron gas in In Ga As ∕ In Al As quantum wells

E. Diez, Y. P. Chen, S. Avesque, M. Hilke, E. Peled, D. Shahar, J. M. Cerveró, D. L. Sivco, A. Y. Cho

Appl. Phys. Lett. 88, 052107 (2006)

https://doi.org/10.1063/1.2168666

Published: January 2006

View article titled, Two-dimensional electron gas in In Ga As ∕ In Al As quantum wells

Journal Articles

External-cavity tunable mid-infrared laser using off-band surface-emitting Bragg grating coupler

H. L. Zhang, C. Peng, A. Seetharaman, G. P. Luo, Han Q. Le, C. Gmachl, D. L. Sivco, A. Y. Cho

Appl. Phys. Lett. 86, 111112 (2005)

https://doi.org/10.1063/1.1885188

Published: March 2005

View article titled, External-cavity tunable mid-infrared laser using off-band surface-emitting Bragg grating coupler

Journal Articles

Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers

C. Gmachl, N. Owschimikow, A. Belyanin, A. M. Sergent, D. L. Sivco, M. L. Peabody, A. Y. Cho, F. Capasso

Appl. Phys. Lett. 84, 2751–2753 (2004)

https://doi.org/10.1063/1.1703850

Published: April 2004

View article titled, Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers

Journal Articles

Fabrication methods for a quantum cascade photonic crystal surface emitting laser

D. M. Tennant, R. Colombelli, K. Srinivasan, M. Troccoli, O. Painter, C. Gmachl, F. Capasso, A. M. Sergent, D. L. Sivco, A. Y. Cho

J. Vac. Sci. Technol. B 21, 2907–2911 (2003)

https://doi.org/10.1116/1.1627815

Published: December 2003

View article titled, Fabrication methods for a quantum cascade photonic crystal surface emitting laser

Journal Articles

Linewidth enhancement factor of a type-I quantum-cascade laser

M. Lerttamrab, S. L. Chuang, C. Gmachl, D. L. Sivco, F. Capasso, A. Y. Cho

J. Appl. Phys. 94, 5426–5428 (2003)

https://doi.org/10.1063/1.1611285

Published: October 2003

View article titled, Linewidth enhancement factor of a type-I quantum-cascade laser

Journal Articles

Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μ m wavelength in GaN/AlGaN heterostructures

J. D. Heber, C. Gmachl, H. M. Ng, A. Y. Cho

Appl. Phys. Lett. 81, 1237–1239 (2002)

https://doi.org/10.1063/1.1500412

Published: August 2002

View article titled, Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μ m wavelength in GaN/AlGaN heterostructures

Journal Articles

Single-crystal GaN/Gd₂O₃/GaN heterostructure

M. Hong, J. Kwo, S. N. G. Chu, J. P. Mannaerts, A. R. Kortan, H. M. Ng, A. Y. Cho, K. A. Anselm, C. M. Lee, J. I. Chyi

J. Vac. Sci. Technol. B 20, 1274–1277 (2002)

https://doi.org/10.1116/1.1473178

Published: June 2002

View article titled, Single-crystal GaN/Gd2O3/GaN heterostructure

Journal Articles

Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy

H. M. Ng, A. Y. Cho

J. Vac. Sci. Technol. B 20, 1217–1220 (2002)

https://doi.org/10.1116/1.1463723

Published: June 2002

View article titled, Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy

Journal Articles

Nonlinear macroscopic polarization in GaN/Al x Ga 1−x N quantum wells

G. Vaschenko, D. Patel, C. S. Menoni, H. M. Ng, A. Y. Cho

Appl. Phys. Lett. 80, 4211–4213 (2002)

https://doi.org/10.1063/1.1483906

Published: June 2002

View article titled, Nonlinear macroscopic polarization in GaN/Al x Ga 1−x N quantum wells

Journal Articles

In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells

H. M. Ng, S. N. G. Chu, A. Y. Cho

J. Vac. Sci. Technol. A 19, 292–294 (2001)

https://doi.org/10.1116/1.1335838

Published: January 2001

View article titled, In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells

Journal Articles

Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

M. Hong, K. A. Anselm, J. Kwo, H. M. Ng, J. N. Baillargeon, A. R. Kortan, J. P. Mannaerts, A. Y. Cho, C. M. Lee, J. I. Chyi, T. S. Lay

J. Vac. Sci. Technol. B 18, 1453–1456 (2000)

https://doi.org/10.1116/1.591402

Published: May 2000

View article titled, Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

Journal Articles

GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy

W.-Y. Hwang, J. N. Baillargeon, S. N. G. Chu, P. F. Sciortino, A. Y. Cho

J. Vac. Sci. Technol. B 16, 1422–1425 (1998)

https://doi.org/10.1116/1.590223

Published: May 1998

View article titled, GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy

Journal Articles

Long wavelength infrared (λ≂11 μm) quantum cascade lasers

C. Sirtori, J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, A. Y. Cho

Appl. Phys. Lett. 69, 2810–2812 (1996)

https://doi.org/10.1063/1.116851

Published: November 1996

View article titled, Long wavelength infrared (λ≂11 μm) quantum cascade lasers

Journal Articles

Incorporation of arsenic and phosphorus in Ga_xIn_1−xAs_yP_1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells

J. N. Baillargeon, A. Y. Cho, K. Y. Cheng

J. Appl. Phys. 79, 7652–7656 (1996)

https://doi.org/10.1063/1.362429

Published: May 1996

View article titled, Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells

Journal Articles

All solid source molecular beam epitaxy growth of Ga_xIn_1−xAs_yP_1−y/InP lasers using phosphorus and arsenic valved cracking cells

J. N. Baillargeon, K. Y. Cheng, A. Y. Cho, S. N. G. Chu

J. Vac. Sci. Technol. B 14, 2244–2247 (1996)

https://doi.org/10.1116/1.588910

Published: May 1996

View article titled, All solid source molecular beam epitaxy growth of GaxIn1−xAsyP1−y/InP lasers using phosphorus and arsenic valved cracking cells

Journal Articles

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

J. N. Baillargeon, K. Y. Cheng, A. Y. Cho

Appl. Phys. Lett. 67, 2960–2962 (1995)

https://doi.org/10.1063/1.114825

Published: November 1995

View article titled, GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

Journal Articles

Digital transmission link using surface emitting lasers and photoreceivers

N. K. Dutta, D. T. Nichols, D. Vakhshoori, D. L. Sivco, A. Y. Cho

Appl. Phys. Lett. 67, 588–589 (1995)

https://doi.org/10.1063/1.115397

Published: July 1995

View article titled, Digital transmission link using surface emitting lasers and photoreceivers

Journal Articles

Transparent and opaque Schottky contacts on undoped In_0.52Al_0.48As grown by molecular beam epitaxy

Wei Gao, Paul R. Berger, Robert G. Hunsperger, G. Zydzik, W. W. Rhodes, H. M. O’Bryan, D. Sivco, A. Y. Cho

Appl. Phys. Lett. 66, 3471–3473 (1995)

https://doi.org/10.1063/1.113767

Published: June 1995

View article titled, Transparent and opaque Schottky contacts on undoped In0.52Al0.48As grown by molecular beam epitaxy

Journal Articles

Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers

L. W. Tu, E. F. Schubert, Y. H. Wang, B. E. Weir, G. J. Zydzik, A. Y. Cho

Appl. Phys. Lett. 66, 2315–2317 (1995)

https://doi.org/10.1063/1.113967

Published: May 1995

View article titled, Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers

NARROW

Topics

In 0.68 Ga 0.32 As ∕ Al 0.64 In 0.36 As ∕ In P 4.5 μ m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy

Two-dimensional electron gas in In Ga As ∕ In Al As quantum wells

External-cavity tunable mid-infrared laser using off-band surface-emitting Bragg grating coupler

Temperature dependence and single-mode tuning behavior of second-harmonic generation in quantum cascade lasers

Fabrication methods for a quantum cascade photonic crystal surface emitting laser

Linewidth enhancement factor of a type-I quantum-cascade laser

Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μ m wavelength in GaN/AlGaN heterostructures

Single-crystal GaN/Gd₂O₃/GaN heterostructure

Investigation of Si doping and impurity incorporation dependence on the polarity of GaN by molecular beam epitaxy

Nonlinear macroscopic polarization in GaN/Al x Ga 1−x N quantum wells

In situ determination of growth rate by pyrometric interferometry during molecular-beam epitaxy: Application to the growth of AlGaN/GaN quantum wells

Properties of Ga 2 O 3 ( Gd 2 O 3 )/ GaN metal–insulator–semiconductor diodes

GaInAsP/InP distributed feedback lasers grown directly on grated substrates by solid-source molecular beam epitaxy

Long wavelength infrared (λ≂11 μm) quantum cascade lasers

Incorporation of arsenic and phosphorus in Ga_xIn_1−xAs_yP_1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells

All solid source molecular beam epitaxy growth of Ga_xIn_1−xAs_yP_1−y/InP lasers using phosphorus and arsenic valved cracking cells

GaInAs/GaAs/GaInP strained quantum well lasers (λ∼0.98 μm) grown by molecular beam epitaxy using solid phosphorus and arsenic valved cracking cells

Digital transmission link using surface emitting lasers and photoreceivers

Transparent and opaque Schottky contacts on undoped In_0.52Al_0.48As grown by molecular beam epitaxy

Superior output linearity of optimized double heterostructure vertical‐cavity top‐emitting lasers

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only