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Journal Articles

MicroLED arrays—A perspective beyond displays

Open Access
J. D. Prades, F. Meierhofer, A. Diéguez, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 125, 150504 (2024)
https://doi.org/10.1063/5.0223867
Published: October 2024
View article titled, MicroLED arrays—A perspective beyond displays
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Journal Articles

Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics

Open Access
A. Lex, A. Avramescu, F. Vögl, M. Brandl, M. Binder, M. Hetzl, H. Spende, S. Wolter, A. Waag, N. von Malm
Journal: Journal of Applied Physics
J. Appl. Phys. 136, 024501 (2024)
https://doi.org/10.1063/5.0204652
Published: July 2024
View article titled, Impact of crystallographic facet of InGaN micro-LED sidewalls on electro-optical characteristics
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Journal Articles

Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption

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R. J. Martins, J. P. Siqueira, I. Manglano Clavero, C. Margenfeld, S. Fündling, A. Vogt, A. Waag, T. Voss, C. R. Mendonca
Journal: Journal of Applied Physics
J. Appl. Phys. 123, 243101 (2018)
https://doi.org/10.1063/1.5027395
Published: June 2018
View article titled, Carrier dynamics and optical nonlinearities in a GaN epitaxial thin film under three-photon absorption
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Journal Articles

Vertical architecture for enhancement mode power transistors based on GaN nanowires

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F. Yu, D. Rümmler, J. Hartmann, L. Caccamo, T. Schimpke, M. Strassburg, A. E. Gad, A. Bakin, H.-H. Wehmann, B. Witzigmann, H. S. Wasisto, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 213503 (2016)
https://doi.org/10.1063/1.4952715
Published: May 2016
View article titled, Vertical architecture for enhancement mode power transistors based on GaN nanowires
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Journal Articles

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

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M. S. Mohajerani, S. Khachadorian, T. Schimpke, C. Nenstiel, J. Hartmann, J. Ledig, A. Avramescu, M. Strassburg, A. Hoffmann, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 091112 (2016)
https://doi.org/10.1063/1.4943079
Published: March 2016
View article titled, Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy
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Journal Articles

Surface photovoltage in heavily doped GaN:Si,Zn

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J. D. McNamara, A. Behrends, M. S. Mohajerani, A. Bakin, A. Waag, A. A. Baski, M. A. Reshchikov
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1583, 287–291 (2014)
https://doi.org/10.1063/1.4865654
Published: February 2014
View article titled, Surface photovoltage in heavily doped GaN:Si,Zn
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Journal Articles

Spin noise spectroscopy of ZnO

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H. Horn, F. Berski, A. Balocchi, X. Marie, M. Mansur-Al-Suleiman, A. Bakin, A. Waag, J. Hübner, M. Oestreich
Journal: AIP Conference Proceedings
AIP Conf. Proc. 1566, 69–70 (2013)
https://doi.org/10.1063/1.4848289
Published: December 2013
View article titled, Spin noise spectroscopy of ZnO
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Journal Articles

Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn

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M. A. Reshchikov, M. Foussekis, J. D. McNamara, A. Behrends, A. Bakin, A. Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 073106 (2012)
https://doi.org/10.1063/1.3699312
Published: April 2012
View article titled, Determination of the absolute internal quantum efficiency of photoluminescence in GaN co-doped with Si and Zn
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Journal Articles

Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si

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M. A. Reshchikov, A. G. Willyard, A. Behrends, A. Bakin, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 99, 171110 (2011)
https://doi.org/10.1063/1.3655678
Published: October 2011
View article titled, Extremely high absolute internal quantum efficiency of photoluminescence in co-doped GaN:Zn,Si
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Journal Articles

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

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J. D. Wei, S. F. Li, A. Atamuratov, H.-H. Wehmann, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 97, 172111 (2010)
https://doi.org/10.1063/1.3511541
Published: October 2010
View article titled, Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity
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Journal Articles

Mechanisms for high internal quantum efficiency of ZnO nanorods

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M. A. M. Al-Suleiman, A. Bakin, A. Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 106, 063111 (2009)
https://doi.org/10.1063/1.3226071
Published: September 2009
View article titled, Mechanisms for high internal quantum efficiency of ZnO nanorods
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Journal Articles

Photoluminescence from ZnO nanowires

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Michael A. Reshchikov, A. Behrends, A. Bakin, A. Waag
Journal: Journal of Vacuum Science & Technology B
J. Vac. Sci. Technol. B 27, 1688–1692 (2009)
https://doi.org/10.1116/1.3130159
Published: May 2009
View article titled, Photoluminescence from ZnO nanowires
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Journal Articles

Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope

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D. H. Weber, A. Beyer, B. Völkel, A. Gölzhäuser, E. Schlenker, A. Bakin, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 253126 (2007)
https://doi.org/10.1063/1.2827563
Published: December 2007
View article titled, Determination of the specific resistance of individual freestanding ZnO nanowires with the low energy electron point source microscope
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Journal Articles

Recombination dynamics and lasing in Zn O ∕ Zn Mg O single quantum well structures

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T. V. Shubina, A. A. Toropov, O. G. Lublinskaya, P. S. Kop’ev, S. V. Ivanov, A. El-Shaer, M. Al-Suleiman, A. Bakin, A. Waag, A. Voinilovich, E. V. Lutsenko, G. P. Yablonskii, J. P. Bergman, G. Pozina, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 201104 (2007)
https://doi.org/10.1063/1.2812549
Published: November 2007
View article titled, Recombination dynamics and lasing in Zn O ∕ Zn Mg O single quantum well structures
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Journal Articles

Influence of ZnO seed crystals and annealing on the optical quality of low-temperature grown ZnO nanorods

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C. Bekeny, T. Voss, B. Hilker, J. Gutowski, R. Hauschild, H. Kalt, B. Postels, A. Bakin, A. Waag
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 044908 (2007)
https://doi.org/10.1063/1.2773632
Published: August 2007
View article titled, Influence of ZnO seed crystals and annealing on the optical quality of low-temperature grown ZnO nanorods
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Journal Articles

Optical investigations and exciton localization in high quality Zn 1 − x Mg x O – Zn O single quantum wells

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M. Al-Suleiman, A. El-Shaer, A. Bakin, H.-H. Wehmann, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 91, 081911 (2007)
https://doi.org/10.1063/1.2773760
Published: August 2007
View article titled, Optical investigations and exciton localization in high quality Zn 1 − x Mg x O – Zn O single quantum wells
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Journal Articles

Photoluminescence dynamics of surface‐related emission in VPE grown ZnO nanowires

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L. Wischmeier, T. Voss, I. Rückmann, J. Gutowski, A. C. Mofor, A. Bakin, A. Waag
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 277–278 (2007)
https://doi.org/10.1063/1.2729875
Published: April 2007
View article titled, Photoluminescence dynamics of surface‐related emission in VPE grown ZnO nanowires
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Journal Articles

Photoluminescence properties: Catalyst-free ZnO nanorods and layers versus bulk ZnO

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M. Al-Suleiman, A. Che Mofor, A. El-Shaer, A. Bakin, H.-H. Wehmann, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 231911 (2006)
https://doi.org/10.1063/1.2399349
Published: December 2006
View article titled, Photoluminescence properties: Catalyst-free ZnO nanorods and layers versus bulk ZnO
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Journal Articles

Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

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B. Pécz, A. El-Shaer, A. Bakin, A.-C. Mofor, A. Waag, J. Stoemenos
Journal: Journal of Applied Physics
J. Appl. Phys. 100, 103506 (2006)
https://doi.org/10.1063/1.2382669
Published: November 2006
View article titled, Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer
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Journal Articles

Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires

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T. Voss, C. Bekeny, L. Wischmeier, H. Gafsi, S. Börner, W. Schade, A. C. Mofor, A. Bakin, A. Waag
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 182107 (2006)
https://doi.org/10.1063/1.2364146
Published: October 2006
View article titled, Influence of exciton-phonon coupling on the energy position of the near-band-edge photoluminescence of ZnO nanowires
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