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Journal Articles

Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation

Open Access
A. Aleksandrova, E. Paysen, C. Golz, K. Biermann, A. Trampert, H. Weidlich, W. T. Masselink, Y. Takagaki
Journal: Applied Physics Letters
Appl. Phys. Lett. 126, 232109 (2025)
https://doi.org/10.1063/5.0268057
Published: June 2025
View articletitled, Improving electron mobility in InAs quantum wells on GaAs by removing bunched surface steps generated in strain relaxation
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Journal Articles

Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate

Editor’s PickOpen Access
K. Graser, A. Gilbert, J.-B. Rodriguez, E. Tournié, A. Trampert
Journal: Journal of Applied Physics
J. Appl. Phys. 137, 205302 (2025)
https://doi.org/10.1063/5.0268051
Published: May 2025
View articletitled, Strain relief and threading dislocation reduction in GaSb/AlSb/GaSb heterostructures grown on Si(001) substrate
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Journal Articles

Molecular-beam epitaxy of GaInSbBi alloys

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O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié, J.-B. Rodriguez
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 155304 (2019)
https://doi.org/10.1063/1.5096226
Published: October 2019
View articletitled, Molecular-beam epitaxy of GaInSbBi alloys
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Journal Articles

Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers

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E. Luna, M. Wu, T. Aoki, M. R. McCartney, J. Puustinen, J. Hilska, M. Guina, D. J. Smith, A. Trampert
Journal: Journal of Applied Physics
J. Appl. Phys. 126, 085305 (2019)
https://doi.org/10.1063/1.5111532
Published: August 2019
View articletitled, Impact of Bi incorporation on the evolution of microstructure during growth of low-temperature GaAs:Bi/Ga(As,Bi) layers
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Journal Articles

Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications

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E. Luna, O. Delorme, L. Cerutti, E. Tournié, J.-B. Rodriguez, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 112, 151905 (2018)
https://doi.org/10.1063/1.5024199
Published: April 2018
View articletitled, Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications
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Journal Articles

GaSbBi/GaSb quantum well laser diodes

Editor’s PickAvailable to Purchase
O. Delorme, L. Cerutti, E. Luna, G. Narcy, A. Trampert, E. Tournié, J.-B. Rodriguez
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 222106 (2017)
https://doi.org/10.1063/1.4984799
Published: June 2017
View articletitled, GaSbBi/GaSb quantum well laser diodes
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Journal Articles

Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells

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E. Luna, R. Gargallo-Caballero, F. Ishikawa, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 201906 (2017)
https://doi.org/10.1063/1.4983837
Published: May 2017
View articletitled, Morphological and chemical instabilities of nitrogen delta-doped GaAs/(Al, Ga)As quantum wells
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Journal Articles

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Editor’s PickOpen Access
S. Gaucher, B. Jenichen, J. Kalt, U. Jahn, A. Trampert, J. Herfort
Journal: Applied Physics Letters
Appl. Phys. Lett. 110, 102103 (2017)
https://doi.org/10.1063/1.4977833
Published: March 2017
View articletitled, Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy
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Journal Articles

Structural properties of Co2TiSi films on GaAs(001)

Open Access
B. Jenichen, J. Herfort, M. Hanke, U. Jahn, X. Kong, M. T. Dau, A. Trampert, H. Kirmse, S. C. Erwin
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 225304 (2016)
https://doi.org/10.1063/1.4971344
Published: December 2016
View articletitled, Structural properties of Co2TiSi films on GaAs(001)
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Journal Articles

Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1−xAs core/multishell nanowires

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P. Corfdir, R. B. Lewis, O. Marquardt, H. Küpers, J. Grandal, E. Dimakis, A. Trampert, L. Geelhaar, O. Brandt, R. T. Phillips
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 082107 (2016)
https://doi.org/10.1063/1.4961245
Published: August 2016
View articletitled, Exciton recombination at crystal-phase quantum rings in GaAs/InxGa1−xAs core/multishell nanowires
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Journal Articles

Growth and stability of rocksalt Zn1−xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy

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C.-Y. James Lu, Y.-T. Tu, T. Yan, A. Trampert, L. Chang, K. H. Ploog
Journal: The Journal of Chemical Physics
J. Chem. Phys. 144, 214704 (2016)
https://doi.org/10.1063/1.4950885
Published: June 2016
View articletitled, Growth and stability of rocksalt Zn1−xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy
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Journal Articles

Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets

Open Access
B. Jenichen, M. Hanke, M. Hilse, J. Herfort, A. Trampert, S. C. Erwin
Journal: AIP Advances
AIP Advances 6, 055108 (2016)
https://doi.org/10.1063/1.4949009
Published: May 2016
View articletitled, Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets
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Journal Articles

Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers

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E. Luna, M. Wu, J. Puustinen, M. Guina, A. Trampert
Journal: Journal of Applied Physics
J. Appl. Phys. 117, 185302 (2015)
https://doi.org/10.1063/1.4919896
Published: May 2015
View articletitled, Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1−xBix epilayers
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Journal Articles

Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates

Open Access
M. Niehle, A. Trampert, S. Albert, A. Bengoechea-Encabo, E. Calleja
Journal: APL Materials
APL Mater. 3, 036102 (2015)
https://doi.org/10.1063/1.4914102
Published: March 2015
View articletitled, Electron tomography of (In,Ga)N insertions in GaN nanocolumns grown on semi-polar ( 11 2 ̄ 2 ) GaN templates
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Journal Articles

Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction

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A. Proessdorf, M. Niehle, M. Hanke, F. Grosse, V. Kaganer, O. Bierwagen, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 021601 (2014)
https://doi.org/10.1063/1.4890107
Published: July 2014
View articletitled, Epitaxial polymorphism of La2O3 on Si(111) studied by in situ x-ray diffraction
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Journal Articles

Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

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A. Bengoechea-Encabo, S. Albert, J. Zuñiga-Perez, P. de Mierry, A. Trampert, F. Barbagini, M. A. Sanchez-Garcia, E. Calleja
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 241905 (2013)
https://doi.org/10.1063/1.4846455
Published: December 2013
View articletitled, Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates
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Journal Articles

Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)]

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S. Albert, A. Bengoechea-Encabo, X. Kong, M. A. Sanchez-Garcia, E. Calleja, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 219901 (2013)
https://doi.org/10.1063/1.4808016
Published: May 2013
View articletitled, Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)]
Open the PDF for Erratum: “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” [Appl. Phys. Lett. 102, 181103 (2013)] in another window
Journal Articles

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

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S. Albert, A. Bengoechea-Encabo, X. Kong, M. A. Sanchez-Garcia, E. Calleja, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 181103 (2013)
https://doi.org/10.1063/1.4804293
Published: May 2013
View articletitled, Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns
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Journal Articles

Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

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G. Naresh-Kumar, C. Mauder, K. R. Wang, S. Kraeusel, J. Bruckbauer, P. R. Edwards, B. Hourahine, H. Kalisch, A. Vescan, C. Giesen, M. Heuken, A. Trampert, A. P. Day, C. Trager-Cowan
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 142103 (2013)
https://doi.org/10.1063/1.4801469
Published: April 2013
View articletitled, Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope
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Journal Articles

Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies

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S. Albert, A. Bengoechea-Encabo, P. Lefebvre, F. Barbagini, M. A. Sanchez-Garcia, E. Calleja, U. Jahn, A. Trampert
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 231906 (2012)
https://doi.org/10.1063/1.4728115
Published: June 2012
View articletitled, Selective area growth and characterization of InGaN nano-disks implemented in GaN nanocolumns with different top morphologies
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