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Journal Articles

Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO₂

T. Yajima, T. Nishimura, S. Migita, T. Tanaka, K. Uchida, A. Toriumi

Appl. Phys. Lett. 117, 182902 (2020)

https://doi.org/10.1063/5.0028620

Published: November 2020

View article titled, Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO2

Includes: Supplementary data

Journal Articles

Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

T. Yajima, G. Oike, S. Yamaguchi, S. Miyoshi, T. Nishimura, A. Toriumi

AIP Advances 8, 115133 (2018)

https://doi.org/10.1063/1.5055302

Published: November 2018

View article titled, Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

Journal Articles

Thermal oxidation kinetics of germanium

X. Wang, T. Nishimura, T. Yajima, A. Toriumi

Appl. Phys. Lett. 111, 052101 (2017)

https://doi.org/10.1063/1.4997298

Published: August 2017

View article titled, Thermal oxidation kinetics of germanium

Journal Articles

Carrier density modulation in graphene underneath Ni electrode

T. Moriyama, K. Nagashio, T. Nishimura, A. Toriumi

J. Appl. Phys. 114, 024503 (2013)

https://doi.org/10.1063/1.4813216

Published: July 2013

View article titled, Carrier density modulation in graphene underneath Ni electrode

Journal Articles

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

K. Nagashio, T. Nishimura, A. Toriumi

Appl. Phys. Lett. 102, 173507 (2013)

https://doi.org/10.1063/1.4804430

Published: May 2013

View article titled, Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

Includes: Supplementary data

Journal Articles

Conduction band offset at GeO₂/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

W. F. Zhang, T. Nishimula, K. Nagashio, K. Kita, A. Toriumi

Appl. Phys. Lett. 102, 102106 (2013)

https://doi.org/10.1063/1.4794417

Published: March 2013

View article titled, Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

Journal Articles

Electrical transport properties of graphene on SiO₂ with specific surface structures

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, A. Toriumi

J. Appl. Phys. 110, 024513 (2011)

https://doi.org/10.1063/1.3611394

Published: July 2011

View article titled, Electrical transport properties of graphene on SiO2 with specific surface structures

Journal Articles

Contact resistivity and current flow path at metal/graphene contact

K. Nagashio, T. Nishimura, K. Kita, A. Toriumi

Appl. Phys. Lett. 97, 143514 (2010)

https://doi.org/10.1063/1.3491804

Published: October 2010

View article titled, Contact resistivity and current flow path at metal/graphene contact

Journal Articles

Reversible creation and annihilation of a local leakage path in Hf O 2 ∕ Ge O x stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Yamamura, K. Kita, A. Toriumi, K. Kyuno

Appl. Phys. Lett. 89, 222101 (2006)

https://doi.org/10.1063/1.2396896

Published: November 2006

View article titled, Reversible creation and annihilation of a local leakage path in Hf O 2 ∕ Ge O x stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

Journal Articles

Structural and electrical properties of Hf La O x films for an amorphous high- k gate insulator

Y. Yamamoto, K. Kita, K. Kyuno, A. Toriumi

Appl. Phys. Lett. 89, 032903 (2006)

https://doi.org/10.1063/1.2227630

Published: July 2006

View article titled, Structural and electrical properties of Hf La O x films for an amorphous high- k gate insulator

Journal Articles

Evolution of leakage paths in Hf O 2 ∕ Si O 2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

K. Kyuno, K. Kita, A. Toriumi

Appl. Phys. Lett. 86, 063510 (2005)

https://doi.org/10.1063/1.1862779

Published: February 2005

View article titled, Evolution of leakage paths in Hf O 2 ∕ Si O 2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

Journal Articles

Atomic scale characterization of Hf O 2 ∕ Al 2 O 3 thin films grown on nitrided and oxidized Si substrates

T. Nishimura, T. Okazawa, Y. Hoshino, Y. Kido, K. Iwamoto, K. Tominaga, T. Nabatame, T. Yasuda, A. Toriumi

J. Appl. Phys. 96, 6113–6119 (2004)

https://doi.org/10.1063/1.1808245

Published: December 2004

View article titled, Atomic scale characterization of Hf O 2 ∕ Al 2 O 3 thin films grown on nitrided and oxidized Si substrates

Journal Articles

Study on the growth mechanism of pentacene thin films by the analysis of island density and island size distribution

M. Tejima, K. Kita, K. Kyuno, A. Toriumi

Appl. Phys. Lett. 85, 3746–3748 (2004)

https://doi.org/10.1063/1.1812591

Published: October 2004

View article titled, Study on the growth mechanism of pentacene thin films by the analysis of island density and island size distribution

Journal Articles

Coordination and interface analysis of atomic-layer-deposition Al 2 O 3 on Si(001) using energy-loss near-edge structures

K. Kimoto, Y. Matsui, T. Nabatame, T. Yasuda, T. Mizoguchi, I. Tanaka, A. Toriumi

Appl. Phys. Lett. 83, 4306–4308 (2003)

https://doi.org/10.1063/1.1629397

Published: November 2003

View article titled, Coordination and interface analysis of atomic-layer-deposition Al 2 O 3 on Si(001) using energy-loss near-edge structures

Journal Articles

Stress‐induced leakage current in ultrathin SiO₂ films

N. K. Patel, A. Toriumi

Appl. Phys. Lett. 64, 1809–1811 (1994)

https://doi.org/10.1063/1.111789

Published: April 1994

View article titled, Stress‐induced leakage current in ultrathin SiO2 films

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Topics

Regulating phase transformation kinetics via redox reaction in ferroelectric Ge-doped HfO₂

Hydrogenation of the wide-gap oxide semiconductor as a room-temperature and 3D-compatible electron doping technique

Thermal oxidation kinetics of germanium

Carrier density modulation in graphene underneath Ni electrode

Estimation of residual carrier density near the Dirac point in graphene through quantum capacitance measurement

Conduction band offset at GeO₂/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

Electrical transport properties of graphene on SiO₂ with specific surface structures

Contact resistivity and current flow path at metal/graphene contact

Reversible creation and annihilation of a local leakage path in Hf O 2 ∕ Ge O x stacked gate dielectrics: A direct observation by ultrahigh vacuum conducting atomic force microscopy

Structural and electrical properties of Hf La O x films for an amorphous high- k gate insulator

Evolution of leakage paths in Hf O 2 ∕ Si O 2 stacked gate dielectrics: A stable direct observation by ultrahigh vacuum conducting atomic force microscopy

Atomic scale characterization of Hf O 2 ∕ Al 2 O 3 thin films grown on nitrided and oxidized Si substrates

Study on the growth mechanism of pentacene thin films by the analysis of island density and island size distribution

Coordination and interface analysis of atomic-layer-deposition Al 2 O 3 on Si(001) using energy-loss near-edge structures

Stress‐induced leakage current in ultrathin SiO₂ films

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