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Journal Articles

Measurement of direct and indirect bandgaps in synthetic ultrathin MoS₂ and WS₂ films from photoconductivity spectra

I. Shlyakhov, K. Iakoubovskii, S. Banerjee, A. Gaur, D. Lin, I. Asselberghs, I. Radu, J. Chai, M. Yang, S. J. Wang, M. Houssa, A. Stesmans, V. Afanas’ev

J. Appl. Phys. 129, 155302 (2021)

https://doi.org/10.1063/5.0046305

Published: April 2021

View article titled, Measurement of direct and indirect bandgaps in synthetic ultrathin MoS2 and WS2 films from photoconductivity spectra

Includes: Supplementary data

Journal Articles

Variations of paramagnetic defects and dopants in geo-MoS₂ from diverse localities probed by ESR

A. Stesmans, B. Schoenaers, V. V. Afanas’ev

J. Chem. Phys. 152, 234702 (2020)

https://doi.org/10.1063/5.0002046

Published: June 2020

View article titled, Variations of paramagnetic defects and dopants in geo-MoS2 from diverse localities probed by ESR

Journal Articles

Contact resistance at graphene/MoS₂ lateral heterostructures

M. Houssa, K. Iordanidou, A. Dabral, A. Lu, R. Meng, G. Pourtois, V. V. Afanas'ev, A. Stesmans

Appl. Phys. Lett. 114, 163101 (2019)

https://doi.org/10.1063/1.5083133

Published: April 2019

View article titled, Contact resistance at graphene/MoS2 lateral heterostructures

Journal Articles

Ferromagnetism in two-dimensional hole-doped SnO

M. Houssa, K. Iordanidou, G. Pourtois, V. V. Afanas’ev, A. Stesmans

AIP Advances 8, 055010 (2018)

https://doi.org/10.1063/1.5025272

Published: May 2018

View article titled, Ferromagnetism in two-dimensional hole-doped SnO

Journal Articles

Band alignment at interfaces of synthetic few-monolayer MoS₂ with SiO₂ from internal photoemission

I. Shlyakhov, J. Chai, M. Yang, S. J. Wang, V. V. Afanas’ev, M. Houssa, A. Stesmans

APL Mater. 6, 026801 (2018)

https://doi.org/10.1063/1.5002617

Published: November 2017

View article titled, Band alignment at interfaces of synthetic few-monolayer MoS2 with SiO2 from internal photoemission

Includes: Supplementary data

Journal Articles

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS₂: Dopant level and activation

B. Schoenaers, A. Stesmans, V. V. Afanas’ev

AIP Advances 7, 105006 (2017)

https://doi.org/10.1063/1.5006737

Published: October 2017

View article titled, ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS2: Dopant level and activation

Journal Articles

Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials

M. Krishtab, V. Afanas'ev, A. Stesmans, S. De Gendt

Appl. Phys. Lett. 111, 032908 (2017)

https://doi.org/10.1063/1.4995241

Published: July 2017

View article titled, Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials

Includes: Supplementary data

Journal Articles

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al₂O₃

H.-Y. Chou, E. O'Connor, A. O'Mahony, I. M. Povey, P. K. Hurley, Lin Dong, P. D. Ye, V. V. Afanas'ev, M. Houssa, A. Stesmans

J. Appl. Phys. 120, 235701 (2016)

https://doi.org/10.1063/1.4971178

Published: December 2016

View article titled, Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al2O3

Journal Articles

ESR study of p-type natural 2H-polytype MoS₂ crystals: The As acceptor activity

A. Stesmans, S. Iacovo, V. V. Afanas'ev

Appl. Phys. Lett. 109, 172104 (2016)

https://doi.org/10.1063/1.4965841

Published: October 2016

View article titled, ESR study of p-type natural 2H-polytype MoS2 crystals: The As acceptor activity

Journal Articles

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

F. Cerbu, O. Madia, D. V. Andreev, S. Fadida, M. Eizenberg, L. Breuil, J. G. Lisoni, J. A. Kittl, J. Strand, A. L. Shluger, V. V. Afanas'ev, M. Houssa, A. Stesmans

Appl. Phys. Lett. 108, 222901 (2016)

https://doi.org/10.1063/1.4952718

Published: May 2016

View article titled, Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Includes: Supplementary data

Journal Articles

Inherent point defects at the thermal higher-Miller index (211)Si/SiO₂ interface

S. Iacovo, A. Stesmans

Appl. Phys. Lett. 105, 262101 (2014)

https://doi.org/10.1063/1.4904413

Published: December 2014

View article titled, Inherent point defects at the thermal higher-Miller index (211)Si/SiO2 interface

Journal Articles

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

R. Martini, J. Kepa, M. Debucquoy, V. Depauw, M. Gonzalez, I. Gordon, A. Stesmans, J. Poortmans

Appl. Phys. Lett. 105, 173906 (2014)

https://doi.org/10.1063/1.4901026

Published: October 2014

View article titled, Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Journal Articles

Hydrogen interaction kinetics of Ge dangling bonds at the Si_0.25Ge_0.75/SiO₂ interface

A. Stesmans, T. Nguyen Hoang, V. V. Afanas'ev

J. Appl. Phys. 116, 044501 (2014)

https://doi.org/10.1063/1.4880739

Published: July 2014

View article titled, Hydrogen interaction kinetics of Ge dangling bonds at the Si0.25Ge0.75/SiO2 interface

Journal Articles

Band alignment at interfaces of amorphous Al₂O₃ with Ge_1−xSn_x- and strained Ge-based channels

H.-Y. Chou, V. V. Afanas'ev, M. Houssa, A. Stesmans, B. Vincent, F. Gencarelli, Y. Shimura, C. Merckling, R. Loo, O. Nakatsuka, S. Zaima

Appl. Phys. Lett. 104, 202107 (2014)

https://doi.org/10.1063/1.4878558

Published: May 2014

View article titled, Band alignment at interfaces of amorphous Al2O3 with Ge1−xSnx- and strained Ge-based channels

Journal Articles

The origin of white luminescence from silicon oxycarbide thin films

V. Nikas, S. Gallis, M. Huang, A. E. Kaloyeros, A. P. D. Nguyen, A. Stesmans, V. V. Afanas'ev

Appl. Phys. Lett. 104, 061906 (2014)

https://doi.org/10.1063/1.4865100

Published: February 2014

View article titled, The origin of white luminescence from silicon oxycarbide thin films

Journal Articles

As_Ga⁺ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

A. Stesmans, S. Nguyen, V. V. Afanas'ev

Appl. Phys. Lett. 103, 162111 (2013)

https://doi.org/10.1063/1.4824881

Published: October 2013

View article titled, AsGa+ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

Journal Articles

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

V. V. Afanas'ev, A. P. D. Nguyen, M. Houssa, A. Stesmans, Zs. Tőkei, M. R. Baklanov

Appl. Phys. Lett. 102, 172908 (2013)

https://doi.org/10.1063/1.4801938

Published: May 2013

View article titled, High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Journal Articles

Thermally induced degradation of condensation-grown (100)Ge_0.75Si_0.25/SiO₂ interfaces revealed by electron spin resonance

J. Kepa, A. Stesmans, V. V. Afanas'ev

Appl. Phys. Lett. 102, 122104 (2013)

https://doi.org/10.1063/1.4795309

Published: March 2013

View article titled, Thermally induced degradation of condensation-grown (100)Ge0.75Si0.25/SiO2 interfaces revealed by electron spin resonance

Journal Articles

Electron spin resonance features of the Ge P_b1 dangling bond defect in condensation-grown (100)Si/SiO₂/Si_1−xGe_x/SiO₂ heterostructures

P. Somers, A. Stesmans, L. Souriau, V. V. Afanas’ev

J. Appl. Phys. 112, 074501 (2012)

https://doi.org/10.1063/1.4748313

Published: October 2012

View article titled, Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures

Journal Articles

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al₂O₃

H.-Y. Chou, V. V. Afanas’ev, M. Houssa, A. Stesmans, Lin Dong, P. D. Ye

Appl. Phys. Lett. 101, 082114 (2012)

https://doi.org/10.1063/1.4747797

Published: August 2012

View article titled, Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al2O3

NARROW

Topics

Measurement of direct and indirect bandgaps in synthetic ultrathin MoS₂ and WS₂ films from photoconductivity spectra

Variations of paramagnetic defects and dopants in geo-MoS₂ from diverse localities probed by ESR

Contact resistance at graphene/MoS₂ lateral heterostructures

Ferromagnetism in two-dimensional hole-doped SnO

Band alignment at interfaces of synthetic few-monolayer MoS₂ with SiO₂ from internal photoemission

ESR identification of the nitrogen acceptor in 2H-polytype synthetic MoS₂: Dopant level and activation

Leakage current induced by surfactant residues in self-assembly based ultralow-k dielectric materials

Band offsets and trap-related electron transitions at interfaces of (100)InAs with atomic-layer deposited Al₂O₃

ESR study of p-type natural 2H-polytype MoS₂ crystals: The As acceptor activity

Intrinsic electron traps in atomic-layer deposited HfO₂ insulators

Inherent point defects at the thermal higher-Miller index (211)Si/SiO₂ interface

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Hydrogen interaction kinetics of Ge dangling bonds at the Si_0.25Ge_0.75/SiO₂ interface

Band alignment at interfaces of amorphous Al₂O₃ with Ge_1−xSn_x- and strained Ge-based channels

The origin of white luminescence from silicon oxycarbide thin films

As_Ga⁺ antisites identified by electron spin resonance as a main interface defect system in thermal GaAs/native oxide structures

High-resolution electron spin resonance analysis of ion bombardment induced defects in advanced low-κ insulators (κ = 2.0-2.5)

Thermally induced degradation of condensation-grown (100)Ge_0.75Si_0.25/SiO₂ interfaces revealed by electron spin resonance

Electron spin resonance features of the Ge P_b1 dangling bond defect in condensation-grown (100)Si/SiO₂/Si_1−xGe_x/SiO₂ heterostructures

Electron band alignment at the interface of (100)InSb with atomic-layer deposited Al₂O₃

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