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Journal Articles

Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics

Ł. Dusanowski, P. Mrowiński, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 111, 253106 (2017)
https://doi.org/10.1063/1.5005971
Published: December 2017
View articletitled, Confinement regime in self-assembled InAs/InAlGaAs/InP quantum dashes determined from exciton and biexciton recombination kinetics
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Journal Articles

Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission

W. Rudno-Rudziński, M. Syperek, J. Andrzejewski, A. Maryński, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, G. Sęk
Journal: AIP Advances
AIP Advances 7, 015117 (2017)
https://doi.org/10.1063/1.4975634
Published: January 2017
View articletitled, Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission
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Includes: Supplementary data
Journal Articles

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm

M. Syperek, Ł. Dusanowski, M. Gawełczyk, G. Sȩk, A. Somers, J. P. Reithmaier, S. Höfling, J. Misiewicz
Journal: Applied Physics Letters
Appl. Phys. Lett. 109, 193108 (2016)
https://doi.org/10.1063/1.4966997
Published: November 2016
View articletitled, Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55μm
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Journal Articles

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

P. Mrowiński, K. Tarnowski, J. Olszewski, A. Somers, M. Kamp, J. P. Reithmaier, W. Urbańczyk, J. Misiewicz, P. Machnikowski, G. Sęk
Journal: Journal of Applied Physics
J. Appl. Phys. 120, 074303 (2016)
https://doi.org/10.1063/1.4961044
Published: August 2016
View articletitled, Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment
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Journal Articles

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

Ł. Dusanowski, M. Syperek, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 108, 163108 (2016)
https://doi.org/10.1063/1.4947448
Published: April 2016
View articletitled, Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K
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Journal Articles

Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm

P. Mrowiński, A. Musiał, A. Maryński, M. Syperek, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 106, 053114 (2015)
https://doi.org/10.1063/1.4907650
Published: February 2015
View articletitled, Magnetic field control of the neutral and charged exciton fine structure in single quantum dashes emitting at 1.55 μm
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Journal Articles

Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash

Ł. Dusanowski, M. Syperek, P. Mrowiński, W. Rudno-Rudziński, J. Misiewicz, A. Somers, S. Höfling, M. Kamp, J. P. Reithmaier, G. Sęk
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 021909 (2014)
https://doi.org/10.1063/1.4890603
Published: July 2014
View articletitled, Single photon emission at 1.55 μm from charged and neutral exciton confined in a single quantum dash
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Journal Articles

Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm

Ł. Dusanowski, M. Syperek, W. Rudno-Rudziński, P. Mrowiński, G. Sȩk, J. Misiewicz, A. Somers, J. P. Reithmaier, S. Höfling, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 103, 253113 (2013)
https://doi.org/10.1063/1.4852736
Published: December 2013
View articletitled, Exciton and biexciton dynamics in single self-assembled InAs/InGaAlAs/InP quantum dash emitting near 1.55 μm
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Journal Articles

On the mechanisms of energy transfer between quantum well and quantum dashes

G. Sęk, R. Kudrawiec, P. Podemski, J. Misiewicz, A. Somers, S. Höfling, J. P. Reithmaier, M. Kamp, A. Forchel
Journal: Journal of Applied Physics
J. Appl. Phys. 112, 033520 (2012)
https://doi.org/10.1063/1.4743002
Published: August 2012
View articletitled, On the mechanisms of energy transfer between quantum well and quantum dashes
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Journal Articles

Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In 0.53 Ga 0.47 As / In 0.53 Ga 0.23 Al 0.24 As quantum well and InAs quantum dashes

R. Kudrawiec, G. Sęk, M. Motyka, J. Misiewicz, A. Somers, S. Höfling, L. Worschech, A. Forchel
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 086106 (2010)
https://doi.org/10.1063/1.3483948
Published: October 2010
View articletitled, Contactless electroreflectance of optical transitions in tunnel-injection structures composed of an In 0.53 Ga 0.47 As / In 0.53 Ga 0.23 Al 0.24 As quantum well and InAs quantum dashes
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Journal Articles

Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 μ m emission

G. Sęk, P. Poloczek, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 081915 (2007)
https://doi.org/10.1063/1.2472543
Published: February 2007
View articletitled, Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 μ m emission
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Journal Articles

Contactless electroreflectance of In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes grown on InP substrate: Analysis of the wetting layer transition

R. Kudrawiec, M. Motyka, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel, A. Sauerwald, T. Kümmell, G. Bacher
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 013507 (2007)
https://doi.org/10.1063/1.2405233
Published: January 2007
View articletitled, Contactless electroreflectance of In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes grown on InP substrate: Analysis of the wetting layer transition
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Journal Articles

Thermal quenching of photoluminescence from In As ∕ In 0.53 Ga 0.23 Al 0.24 As ∕ In P quantum dashes with different sizes

P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 151902 (2006)
https://doi.org/10.1063/1.2358312
Published: October 2006
View articletitled, Thermal quenching of photoluminescence from In As ∕ In 0.53 Ga 0.23 Al 0.24 As ∕ In P quantum dashes with different sizes
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Journal Articles

Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55 μ m

M. van der Poel, J. Mørk, A. Somers, A. Forchel, J. P. Reithmaier, G. Eisenstein
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 081102 (2006)
https://doi.org/10.1063/1.2337881
Published: August 2006
View articletitled, Ultrafast gain and index dynamics of quantum dash structures emitting at 1.55 μ m
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Journal Articles

Optical gain properties of In As ∕ In Al Ga As ∕ In P quantum dash structures with a spectral gain bandwidth of more than 300 nm

A. Somers, W. Kaiser, J. P. Reithmaier, A. Forchel, M. Gioaninni, I. Montrosset
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 061107 (2006)
https://doi.org/10.1063/1.2266994
Published: August 2006
View articletitled, Optical gain properties of In As ∕ In Al Ga As ∕ In P quantum dash structures with a spectral gain bandwidth of more than 300 nm
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Journal Articles

On the tunnel injection of excitons and free carriers from In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well to In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes

P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, J. P. Reithmaier, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 061902 (2006)
https://doi.org/10.1063/1.2243889
Published: August 2006
View articletitled, On the tunnel injection of excitons and free carriers from In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well to In As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum dashes
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Journal Articles

Photoreflectance-probed excited states in In As ∕ In Ga Al As quantum dashes grown on InP substrate

W. Rudno-Rudziński, R. Kudrawiec, P. Podemski, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 89, 031908 (2006)
https://doi.org/10.1063/1.2226503
Published: July 2006
View articletitled, Photoreflectance-probed excited states in In As ∕ In Ga Al As quantum dashes grown on InP substrate
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Journal Articles

Photoreflectance investigation of InAs quantum dashes embedded in In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well grown on InP substrate

W. Rudno-Rudziński, R. Kudrawiec, G. Sęk, J. Misiewicz, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 141915 (2006)
https://doi.org/10.1063/1.2187496
Published: April 2006
View articletitled, Photoreflectance investigation of InAs quantum dashes embedded in In 0.53 Ga 0.47 As ∕ In 0.53 Ga 0.23 Al 0.24 As quantum well grown on InP substrate
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Journal Articles

Time-resolved chirp in an InAs ∕ InP quantum-dash optical amplifier operating with 10 Gbit ∕ s data

D. Hadass, V. Mikhelashvili, G. Eisenstein, A. Somers, S. Deubert, W. Kaiser, J. P. Reithmaier, A. Forchel, D. Finzi, Y. Maimon
Journal: Applied Physics Letters
Appl. Phys. Lett. 87, 021104 (2005)
https://doi.org/10.1063/1.1994947
Published: July 2005
View articletitled, Time-resolved chirp in an InAs ∕ InP quantum-dash optical amplifier operating with 10 Gbit ∕ s data
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Journal Articles

Structural Analysis of InAs Quantum Dashes Grown on InP Substrate by Scanning Transmission Electron Microscopy

A. Sauerwald, T. Kümmell, G. Bacher, A. Somers, R. Schwertberger, J. P. Reithmaier, A. Forchel
Journal: AIP Conference Proceedings
AIP Conf. Proc. 772, 591–592 (2005)
https://doi.org/10.1063/1.1994245
Published: June 2005
View articletitled, Structural Analysis of InAs Quantum Dashes Grown on InP Substrate by Scanning Transmission Electron Microscopy
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