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Journal Articles

Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface

M. Schowalter, A. Karg, M. Alonso-Orts, J. A. Bich, S. Raghuvansy, M. S. Williams, F. F. Krause, T. Grieb, C. Mahr, T. Mehrtens, P. Vogt, A. Rosenauer, M. Eickhoff
Journal: APL Materials
APL Mater. 12, 091104 (2024)
https://doi.org/10.1063/5.0226857
Published: September 2024
View article titled, Composition and strain of the pseudomorphic <em>α</em>-phase intermediate layer at the Ga<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> interface
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Journal Articles

Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy

T. Aschenbrenner, M. Schowalter, T. Mehrtens, K. Müller-Caspary, M. Fikry, D. Heinz, I. Tischer, M. Madel, K. Thonke, D. Hommel, F. Scholz, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 119, 175701 (2016)
https://doi.org/10.1063/1.4948385
Published: May 2016
View article titled, Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
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Journal Articles

Publisher's Note: “Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires” [J. Appl. Phys. 116 , 144303 (2014)]

H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, A. T. J. van Helvoort
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 239901 (2014)
https://doi.org/10.1063/1.4902325
Published: December 2014
View article titled, Publisher's Note: “Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires” [J. Appl. Phys. 116 , 144303 (2014)]
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Journal Articles

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

H. Kauko, B. O. Fimland, T. Grieb, A. M. Munshi, K. Müller, A. Rosenauer, A. T. J. van Helvoort
Journal: Journal of Applied Physics
J. Appl. Phys. 116, 144303 (2014)
https://doi.org/10.1063/1.4896904
Published: October 2014
View article titled, Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires
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Journal Articles

Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images

J. Gonnissen, A. De Backer, A. J. den Dekker, G. T. Martinez, A. Rosenauer, J. Sijbers, S. Van Aert
Journal: Applied Physics Letters
Appl. Phys. Lett. 105, 063116 (2014)
https://doi.org/10.1063/1.4892884
Published: August 2014
View article titled, Optimal experimental design for the detection of light atoms from high-resolution scanning transmission electron microscopy images
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Journal Articles

Towards optical hyperdoping of binary oxide semiconductors

A. Schneider, K. Sebald, A. Dev, K. Frank, A. Rosenauer, T. Voss
Journal: Journal of Applied Physics
J. Appl. Phys. 113, 143512 (2013)
https://doi.org/10.1063/1.4801531
Published: April 2013
View article titled, Towards optical hyperdoping of binary oxide semiconductors
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Journal Articles

Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography

T. Mehrtens, M. Schowalter, D. Tytko, P. Choi, D. Raabe, L. Hoffmann, H. Jönen, U. Rossow, A. Hangleiter, A. Rosenauer
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 132112 (2013)
https://doi.org/10.1063/1.4799382
Published: April 2013
View article titled, Measurement of the indium concentration in high indium content InGaN layers by scanning transmission electron microscopy and atom probe tomography
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Includes: Supplementary data
Journal Articles

Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content

L. Hoffmann, H. Bremers, H. Jönen, U. Rossow, M. Schowalter, T. Mehrtens, A. Rosenauer, A. Hangleiter
Journal: Applied Physics Letters
Appl. Phys. Lett. 102, 102110 (2013)
https://doi.org/10.1063/1.4795623
Published: March 2013
View article titled, Atomic scale investigations of ultra-thin GaInN/GaN quantum wells with high indium content
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Journal Articles

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces

A. Rath, J. K. Dash, R. R. Juluri, Marco Schowalter, Knut Mueller, A. Rosenauer, P. V. Satyam
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 104319 (2012)
https://doi.org/10.1063/1.4721666
Published: May 2012
View article titled, Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
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Journal Articles

Strong coupling in monolithic microcavities with ZnSe quantum wells

K. Sebald, M. Seyfried, S. Klembt, S. Bley, A. Rosenauer, D. Hommel, C. Kruse
Journal: Applied Physics Letters
Appl. Phys. Lett. 100, 161104 (2012)
https://doi.org/10.1063/1.4704188
Published: April 2012
View article titled, Strong coupling in monolithic microcavities with ZnSe quantum wells
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Journal Articles

Growth of oriented Au nanostructures: Role of oxide at the interface

A. Rath, J. K. Dash, R. R. Juluri, A. Rosenauer, Marcos Schoewalter, P. V. Satyam
Journal: Journal of Applied Physics
J. Appl. Phys. 111, 064322 (2012)
https://doi.org/10.1063/1.3698505
Published: March 2012
View article titled, Growth of oriented Au nanostructures: Role of oxide at the interface
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Journal Articles

Optical and structural characterization of AlInN layers for optoelectronic applications

T. Aschenbrenner, H. Dartsch, C. Kruse, M. Anastasescu, M. Stoica, M. Gartner, A. Pretorius, A. Rosenauer, Thomas Wagner, D. Hommel
Journal: Journal of Applied Physics
J. Appl. Phys. 108, 063533 (2010)
https://doi.org/10.1063/1.3467964
Published: September 2010
View article titled, Optical and structural characterization of AlInN layers for optoelectronic applications
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Journal Articles

Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga 1 − x In x As / GaAs quantum wells

J. T. Titantah, D. Lamoen, M. Schowalter, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 105, 084310 (2009)
https://doi.org/10.1063/1.3115407
Published: April 2009
View article titled, Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga 1 − x In x As / GaAs quantum wells
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Journal Articles

Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures

J. Pizarro, P. L. Galindo, E. Guerrero, A. Yáñez, M. P. Guerrero, A. Rosenauer, D. L. Sales, S. I. Molina
Journal: Applied Physics Letters
Appl. Phys. Lett. 93, 153107 (2008)
https://doi.org/10.1063/1.2998656
Published: October 2008
View article titled, Simulation of high angle annular dark field scanning transmission electron microscopy images of large nanostructures
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Journal Articles

Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells

K. Volz, T. Torunski, O. Rubel, W. Stolz, P. Kruse, D. Gerthsen, M. Schowalter, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 102, 083504 (2007)
https://doi.org/10.1063/1.2794739
Published: October 2007
View article titled, Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
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Journal Articles

Bond length variation in Ga 1 − x In x As crystals from the Tersoff potential

J. T. Titantah, D. Lamoen, M. Schowalter, A. Rosenauer
Journal: Journal of Applied Physics
J. Appl. Phys. 101, 123508 (2007)
https://doi.org/10.1063/1.2748338
Published: June 2007
View article titled, Bond length variation in Ga 1 − x In x As crystals from the Tersoff potential
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Journal Articles

Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90 , 081918 (2007)]

R. Kröger, T. Paskova, S. Figge, D. Hommel, A. Rosenauer, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 249901 (2007)
https://doi.org/10.1063/1.2744473
Published: June 2007
View article titled, Erratum: “Interfacial structure of <em>a</em>-plane GaN grown on <em>r</em>-plane sapphire” [Appl. Phys. Lett. 90 , 081918 (2007)]
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Journal Articles

On the Mechanism of Dislocation and Stacking Fault Formation in a‐plane GaN Films Grown by Hydride Vapor Phase Epitaxy

R. Kröger, T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, S. Nakamura
Journal: AIP Conference Proceedings
AIP Conf. Proc. 893, 341–342 (2007)
https://doi.org/10.1063/1.2729907
Published: April 2007
View article titled, On the Mechanism of Dislocation and Stacking Fault Formation in <em>a</em>‐plane GaN Films Grown by Hydride Vapor Phase Epitaxy
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Journal Articles

Interfacial structure of a -plane GaN grown on r -plane sapphire

R. Kröger, T. Paskova, S. Figge, D. Hommel, A. Rosenauer, B. Monemar
Journal: Applied Physics Letters
Appl. Phys. Lett. 90, 081918 (2007)
https://doi.org/10.1063/1.2696309
Published: February 2007
View article titled, Interfacial structure of a -plane GaN grown on r -plane sapphire
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Journal Articles

Ab initio computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold

M. Schowalter, A. Rosenauer, D. Lamoen, P. Kruse, D. Gerthsen
Journal: Applied Physics Letters
Appl. Phys. Lett. 88, 232108 (2006)
https://doi.org/10.1063/1.2210453
Published: June 2006
View article titled, <em>Ab initio</em> computation of the mean inner Coulomb potential of wurtzite-type semiconductors and gold
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